Formosa MS Chip Schottky Barrier Diodes FM120-M THRU FM1100-M Silicon epitaxial planer type Features SOD-123 Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.161(4.1) 0.146(3.7) 0.012(0.3) Typ. For surface mounted applications. 0.071(1.8) 0.055(1.4) Exceeds environmental standards of MIL-S-19500 / 228 0.110(2.8) 0.094(2.4) Low leakage current. 0.063(1.6) 0.055(1.4) 0.035(0.9) Typ. 0.035(0.9) Typ. Dimensions in inches and (millimeters) Mechanical data Case : Molded plastic, JEDEC SOD-123 / MINI SMA Terminals : Solder plated, s olderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting Position : Any Weight : 0.04 gram MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER CONDITIONS Symbol Forward rectified current See Fig.1 Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) 25o C VR = VRRM TA = Reverse current MAX. UNIT IO 1.0 A IFSM 30 A 0.5 mA 10 Junction to ambient Diode junction capacitance Rq JA f=1MHz and applied 4vDC reverse voltage Storage temperature MARKING CODE *1 V RMS *2 VR *3 (V) (V) (V) FM120-M 12 20 14 20 FM130-M 13 30 21 30 FM140-M 14 40 28 40 FM150-M 15 50 35 50 FM160-M 16 60 42 60 FM180-M 18 80 56 80 FM1100-M 10 100 70 100 VF *4 120 -55 mA o 98 CJ TSTG V RRM TYP. IR VR = VRRM TA = 125o C Thermal resistance SYMBOLS MIN. C / w pF +150 o C Operating temperature (V) ( o C) 0.50 -55 to +125 *1 Repetitive peak reverse voltage 0.70 *2 RMS voltage -55 to +150 0.85 *3 Continuous reverse voltage *4 Maximum forward voltage RATING AND CHARACTERISTIC CURVES (FM120-M THRU FM1100-M) FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE FIG.2-TYPICAL FORWARD 00 11 FM M~ 1 FM M~ M -M 0- 40 0.4 0.2 0 0 20 40 60 80 100 120 140 160 180 200 AMBIENT TEMPERATURE,( C) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 10 FM 15 0M ~F M 16 0M 15 FM 0- 0.6 INSTANTANEOUS FORWARD CURRENT,(A) 0.8 FM 12 0M ~F M 14 0M 50 1.0 12 FM AVERAGE FORWARD CURRENT,(A) CHARACTERISTICS 1.2 3.0 1.0 18 FM 00 11 M ~F M - -M 0 Tj=25 C Pulse Width 300us 1% Duty Cycle 0.1 PEAK FORWARD SURGE CURRENT,(A) 30 .01 24 .1 .3 .5 .7 .9 1.1 1.3 1.5 FORWARD VOLTAGE,(V) 18 8.3ms Single Half Tj=25 C Sine Wave 12 JEDEC method 6 FIG.5 - TYPICAL REVERSE 0 CHARACTERISTICS 1 5 50 10 100 100 NUMBER OF CYCLES AT 60Hz REVERSE LEAKAGE CURRENT, (mA) FIG.4-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,(pF) 350 300 250 200 150 100 10 1.0 Tj=75 C .1 Tj=25 C 50 0 .01 .05 .1 .5 1 REVERSE VOLTAGE,(V) 5 10 50 100 .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)