BSS123 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating SOT-23 A · · · · Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D B Mechanical Data · · · · Dim G TOP VIEW C S D E G Case: SOT-23, Molded Plastic Case material - UL Flammability Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K23 (See Page 3) Ordering & Date Code Information: See Page 3 Weight: 0.008 grams (approx.) H K J D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 M L Drain L 0.45 0.61 M 0.085 0.180 a 0° 8° All Dimensions in mm Gate Source Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Symbol BSS123 Units Drain-Source Voltage VDSS 100 V Drain-Gate Voltage RGS £ 20KW VDGR 100 V Gate-Source Voltage Continuous VGSS ±20 V Drain Current (Note 1) Continuous Pulsed ID IDM 170 680 mA Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Note: Pd 300 mW RqJA 417 °C/W Tj, TSTG -55 to +150 °C 1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30366 Rev. 3 - 2 1 of 3 www.diodes.com BSS123 @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition BVDSS 100 ¾ ¾ V VGS = 0V, ID = 250mA OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current IDSS ¾ ¾ 1.0 10 µA nA VDS = 100V, VGS = 0V VDS = 20V, VGS = 0V Gate-Body Leakage, Forward IGSSF ¾ ¾ 50 nA VGS = 20V, VDS = 0V VGS(th) 0.8 1.4 2.0 V VDS = VGS, ID = 1mA RDS (ON) ¾ ¾ ¾ ¾ 6.0 10 W VGS = 10V, ID = 0.17A VGS = 4.5V, ID = 0.17A Forward Transconductance gFS 80 370 ¾ mS Drain-Source Diode Forward Voltage VSD ¾ 0.84 1.3 V Input Capacitance Ciss ¾ 29 60 pF Output Capacitance Coss ¾ 10 15 pF Reverse Transfer Capacitance Crss ¾ 2 6 pF Turn-On Rise Time tr ¾ ¾ 8 ns Turn-Off Fall Time tf ¾ ¾ 16 ns Turn-On Delay Time tD(ON) ¾ ¾ 8 ns Turn-Off Delay Time tD(OFF) ¾ ¾ 13 ns ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = 10V, ID = 0.17A, f = 1.0KHz VGS = 0V, IS = 0.34A DYNAMIC CHARACTERISTICS VDS = 25V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS Note: VDD = 30V, ID = 0.28A, RGEN = 50W, VGS = 10V 2. Short duration test pulse used to minimize self-heating effect. 2.4 0.7 0.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) NEW PRODUCT Electrical Characteristics VGS = 10, 7, 6, 5V 0.5 VGS = 4V 0.4 0.3 VGS = 3V 0.2 2.0 VGS = 3V VGS = 4V 1.6 1.2 VGS = 5, 6, 7, 10V 0.1 0.8 0 0.1 0 4 2 3 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics DS30366 Rev. 3 - 2 1 5 2 of 3 www.diodes.com 0.2 0.3 0.4 0.5 0.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 2 On-Resistance Variation with Gate Voltage and Drain-Source Current BSS123 RDS(ON), NORMALIZED ON-RESISTANCE VGS(th), NORMALIZED THRESHOLD VOLTAGE 1.1 1 0.9 0.8 2 1.8 VGS = 10V ID = 170m 1.6 1.4 1.2 1 0.8 0.6 0.4 0.7 -50 -25 0 25 75 50 -25 -50 100 125 150 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (ºC) Fig. 4 On-Resistance Variation with Temperature TJ, JUNCTION TEMPERATURE (ºC) Fig. 3 Gate Threshold Variation with Temperature 50 40 C, CAPACITANCE (pF) 30 Ciss 20 10 Coss Crss 0 0 10 5 20 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 5 Typical Capacitance Ordering Information Notes: 25 (Note 3) Device Packaging Shipping BSS123-7 SOT-23 3000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K23 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September YM NEW PRODUCT 2.2 1.2 K23 Date Code Key Year 2002 2003 2004 2005 2006 2007 2008 Code N P R S T U V Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30366 Rev. 3 - 2 3 of 3 www.diodes.com BSS123