FDJ129P P-Channel -2.5 Vgs Specified PowerTrench MOSFET General Description Features This P-Channel -2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –4.2 A, –20 V. Applications • Low gate charge • Battery management • High performance trench technology for extremely RDS(ON) = 70 mΩ @ VGS = –4.5 V RDS(ON) = 120 mΩ @ VGS = –2.5 V low RDS(ON) • Load switch • Compact industry standard SC75-6 surface mount package S G Bottom Drain S SC75-6 FLMP S S S Absolute Maximum Ratings Symbol 4 3 5 2 6 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter –20 V VGSS Gate-Source Voltage ± 12 V ID Drain Current –4.2 A – Continuous (Note 1a) – Pulsed –16 PD Power Dissipation for Single Operation TJ, TSTG Operating and Storage Junction Temperature Range (Note 1a) 1.6 W –55 to +150 °C 77 °C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient RθJA (Note 1a) Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .A FDJ129P 7’’ 8mm 3000 units 2004 Fairchild Semiconductor Corporation FDJ129P Rev F1 W) FDJ129P July 2004 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min ID = –250 µA –20 Typ Max Units Off Characteristics V BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA,Referenced to 25°C VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA On Characteristics –18 mV/°C (Note 2) ID = –250 µA VGS(th) Gate Threshold Voltage VDS = VGS, ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA,Referenced to 25°C 3 54 91 72 ID(on) On–State Drain Current VGS = –4.5 V, ID = –4.2 A ID = –3.3 A VGS = –2.5 V, VGS = –4.5 V, ID = –4.2,TJ=125°C VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, –0.6 –1.1 –1.5 V mV/°C 70 120 100 –8 mΩ A ID = –4.2 A 11 S VDS = –10 V, V GS = 0 V, f = 1.0 MHz 585 pF 124 pF 61 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time (Note 2) VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω 10 20 ns 9 18 ns td(off) Turn–Off Delay Time 17 30 ns tf Turn–Off Fall Time 10 20 ns Qg Total Gate Charge 4 6 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = –10 V, ID = –4.2 A, VGS = –4.5 V 1.1 nC 1.2 nC Drain–Source Diode Characteristics and Maximum Ratings VSD Drain–Source Diode Forwar Voltage VGS = 0 V, trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge IF = –4.2 A, diF/dt = 100 A/µs IS = –1.5 A –0.7 (Note 2) –1.2 V 16 nS 13 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 77°C/W when mounted on a 1in2 pad of 2 oz copper. b) 110°C/W when mounted on a minimum pad of 2 oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDJ129P Rev F1 (W) FDJ129P Electrical Characteristics FDJ129P Typical Characteristics 1.8 -3.5V -ID, DRAIN CURRENT (A) VGS=-4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 16 -3.0V 12 -2.5V 8 4 -2.0V 0 VGS=-2.5V 1.6 1.4 -3.0V -3.5V 1.2 -4.0V -4.5V 1 0.8 0 1 2 3 4 0 4 8 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 0.22 ID = -4.2A VGS = -4.5V 1.3 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 16 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.4 1.2 1.1 1 0.9 0.8 0.7 ID = -2.1A 0.18 0.14 o TA = 125 C 0.1 o TA = 25 C 0.06 0.02 -50 -25 0 25 50 75 100 125 1 150 2 Figure 3. On-Resistance Variation withTemperature. 100 TA = -55 C -IS, REVERSE DRAIN CURRENT (A) o o 25 C 9 o 125 C 6 3 0 0.5 1 1.5 2 4 5 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 12 VDS = -5V 3 -VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC) -ID, DRAIN CURRENT (A) 12 -ID, DRAIN CURRENT (A) 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 VGS = 0V 10 o TA = 125 C 1 o 25 C 0.1 o -55 C 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDJ129P Rev F1 (W) FDJ129P Typical Characteristics 800 VDS = -5V ID = -4.2A -10V 4 -15V 3 2 1 600 400 COSS 200 CRSS 0 0 0 1 2 3 4 5 0 5 Qg, GATE CHARGE (nC) 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 10 RDS(ON) LIMIT 10 P(pk), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) f = 1 MHz VGS = 0 V CISS CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 100µs 1ms 10ms 100ms 1s 10s DC 1 VGS = -4.5V SINGLE PULSE RθJA = 110oC/W 0.1 TA = 25oC 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 110°C/W TA = 25°C 8 6 4 2 0 0.01 0.1 1 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 100 1000 t1, TIME (sec) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA o RθJA = 110 C/W 0. 0.1 0.1 P(pk) 0.0 5 0.0 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDJ129P Rev F1 (W) FDJ129P Dimensional Outline and Pad Layout FDJ129P Rev F1 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11