INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFR3806, IIRFR3806 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤15.8mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Speed Power Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 43 A IDM Drain Current-Single Pulsed 170 A PD Total Dissipation @TC=25℃ 71 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(j-c) Rth(j-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 2.12 ℃/W 62 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFR3806, IIRFR3806 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA 60 VGS(th) Gate Threshold Voltage VDS=VGS; ID=50μA 2 RDS(on) Drain-Source On-Resistance IGSS TYP MAX UNIT V 4 V VGS=10V; ID=25A 15.8 mΩ Gate-Source Leakage Current VGS= ±20V ±0.1 μA IDSS Drain-Source Leakage Current VDS=60V; VGS= 0V 20 μA VSD Diode forward voltage Is=25A, VGS = 0V 1.3 V isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark