Kersemi BTA16-800BW 16 a snubberless, logic level and standard triac Datasheet

BTA16, BTB16
T1610, T1635
16 A Snubberless™, logic level and standard Triacs
TO-220AB
insulated
BTA16
Features
■
Medium current Triac
■
Low thermal resistance with clip bonding
■
Low thermal resistance insulation ceramic for
insulated BTA
■
High commutation (4Q) or very high
commutation (3Q) capability
■
BTA series UL1557 certified (File ref: 81734)
■
RoHS ( 2002/95/EC) compliant
■
Insulated tab (BTA series, rated at 2500 VRMS)
TO-220AB
BTB16
D2PAK
T1635G
T1610G
Applications
■
■
A2
Snubberless versions (BTA/BTB...W and
T1635) especially recommended for use on
inductive loads, because of their high
commutation performances
G
A1
On/off or phase angle function in applications
such as static relays, light dimmers and
appliance motor speed controllers
Description
Available either in through-hole or surface-mount
packages, the BTA16, BTB16, T1610 and T1635
Triacs series are suitable for general purpose
mains power AC switching.
Table 1.
Device summary
Symbol
IT(RMS)
VDRM/VRRM
Parameter
On-state rms current
Repetitive peak off-state voltage
IGT (Snubberless) Triggering gate current
BTA16 (1)
BTB16
T1610
T1635
16
16
16
16
600/800
600/800
600/800
600/800
35/50
35/50
-
35
IGT (logic level)
Triggering gate current
10
10
10
-
IGT (standard)
Triggering gate current
25/50
25/50
-
-
1. Insulated
TM: Snubberless is a trademark of STMicroelectronics
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BTA16, BTB16
T1610, T1635
Table 2.
Absolute maximum ratings
Symbol
IT(RMS)
ITSM
I²t
dI/dt
VDSM/
VRSM
IGM
PG(AV)
Tstg
Tj
Table 3.
Parameter
Value
Unit
16
A
D2PAK /
TO-220AB
Tc = 100 °C
TO-220AB
insulated
Tc = 86 °C
Non repetitive surge peak on-state
current
(full cycle, Tj initial = 25 °C)
F = 50 Hz
t = 20 ms
160
F = 60 Hz
t = 16.7 ms
168
I²t value for fusing
tp = 10 ms
On-state rms current
(full sine wave)
A
144
A ²s
Critical rate of rise of on-state current
F = 120 Hz
IG = 2 x IGT , tr ≤ 100 ns
Tj = 125 °C
50
A/µs
Non repetitive surge peak off-state
voltage
tp = 10 ms
Tj = 25 °C
VDRM/VRRM
+ 100
V
Peak gate current
tp = 20 µs
Tj = 125 °C
4
A
Tj = 125 °C
1
W
Average gate power dissipation
Storage temperature range
-40 to + 150
Maximum operating junction temperature
-40 to + 125
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Snubberless and logic level (3 quadrants)
BTA16 / BTB16
Symbol
IGT (1)
VGT
Test conditions
VD = 12 V
RL = 33 Ω
VGD
VD = VDRM
RL = 3.3 kΩ
Tj = 125 °C
IH (2)
IT = 500 mA
IL
IG = 1.2 IGT
Quadrant
T1610 T1635
dV/dt (2)
VD = 67 %VDRM
gate open
(2)
10
35
50
I - II - III
Max.
1.3
V
I - II - III
Min.
0.2
V
15
35
15
35
50
25
50
25
50
70
30
60
30
60
80
40
500
40
500
1000
8.5
-
8.5
-
-
3.0
-
3.0
-
-
-
8.5
-
8.5
14
Max.
II
Tj = 125 °C
Min.
(dV/dt)c = 0.1 V/µs Tj = 125 °C
(dI/dt)c
BW
Max.
I - III
35
CW
I - II - III
Max.
10
Unit
SW
(dV/dt)c = 10 V/µs
Tj = 125 °C
Without snubber
Tj = 125 °C
Min.
mA
mA
mA
V/µs
A/ms
1. Minimum IGT is guaranted at 5% of IGT max
2. For both polarities of A2 referenced to A1
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BTA16, BTB16
T1610, T1635
Table 4.
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
standard (4 quadrants)
BTA16 / BTB16
Symbol
IGT (1)
Test conditions
VD = 12 V
Quadrant
RL = 33 Ω
VD = VDRM RL = 3.3 kΩ Tj = 125 °C
IH (2)
IT = 500 mA
IL
IG = 1.2 IGT
50
100
ALL
Max.
1.3
V
ALL
Min.
0.2
V
Max.
25
50
40
60
80
120
Max.
II
dV/dt (2) VD = 67 %VDRM gate open
(2)
25
50
Max.
I - III - IV
(dV/dt)c
B
I - II - III
IV
VGT
VGD
Unit
C
(dI/dt)c = 7 A/ms
mA
mA
mA
Tj = 125 °C
Min.
200
400
V/µs
Tj = 125 °C
Min.
5
10
V/µs
1. Minimum IGT is guaranted at 5% of IGT max
2. For both polarities of A2 referenced to A1
Table 5.
Static characteristics
Symbol
Test conditions
VT (2)
ITM = 22.5 A
Vto (2)
Unit
Tj = 25 °C
Max.
1.55
V
Threshold voltage
Tj = 125 °C
Max.
0.85
V
Rd (2)
Dynamic resistance
Tj = 125 °C
Max.
25
mΩ
IDRM
IRRM
5
µA
VDRM = VRRM
2
mA
Value
Unit
Table 6.
tp = 380 µs
Value
Max.
Tj = 125 °C
Thermal resistance
Symbol
Rth(j-c)
Tj = 25 °C
Parameter
D2PAK / TO-220AB
1.2
TO-220AB insulated
2.1
Junction to case (AC)
°C/W
S(1) = 1 cm² D2PAK
Rth(j-a)
Junction to ambient
TO-220AB / TO-220AB
insulated
45
°C/W
60
1. S = Copper surface under tab
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BTA16, BTB16
T1610, T1635
Figure 1.
Maximum power dissipation versus Figure 2.
on-state rms current (full cycle)
P(W)
On-state rms current versus case
temperature (full cycle)
IT(RMS)(A)
20
18
18
16
16
BTB / T16
14
BTA
14
12
12
10
10
8
8
6
6
4
4
2
2
IT(RMS)(A)
TC(°C)
0
0
0
2
Figure 3.
4
6
8
10
12
14
0
16
On-state rms current versus
ambient temperature (full cycle)
25
Figure 4.
IT(RMS)(A)
50
75
100
125
Relative variation of thermal
impedance versus pulse duration
K=[Zth/Rth]
4.0
1E+0
printed circuit board FR4, copper thickness: 35 µm
D2PAK
3.5
(S=1cm2)
Zth(j-c)
3.0
Zth(j-a)
2.5
2.0
1E-1
1.5
1.0
0.5
TC(°C)
0.0
0
25
Figure 5.
50
tp(s)
1E-2
75
100
1E-3
125
On-state characteristics
(maximum values)
1E-2
Figure 6.
ITM(A)
1E-1
1E+0
1E+1
1E+2
5E+2
Surge peak on-state current versus
number of cycles
ITSM(A)
200
180
Tj max.
Vto = 0.85V
Rd = 25 mΩ
100
160
140
Tj = Tj max.
t=20ms
120
One cycle
Non repetitive
Tj initial=25°C
100
Tj = 25°C.
80
10
Repetitive
TC=85°C
60
40
20
VTM(V)
0.5
2014-6-9
1.0
1.5
2.0
2.5
3.0
Number of cycles
0
1
3.5
4.0
4.5
5.0
4
1
10
100
1000
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BTA16, BTB16
T1610, T1635
Figure 7.
Non-repetitive surge peak on-state Figure 8.
current for a sinusoidal
2
2
Relative variation of gate trigger
current
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
ITSM(A), I t (A s)
2.5
3000
holding current and latching current versus junction
temperature (typical values)
Tj initial=25°C
dI/dt limitation:
50A/µs
2.0
IGT
1000
1.5
ITSM
IH & I L
1.0
I2t
0.5
2
pulse with width tp < 10 ms and corresponding value of I t
100
0.01
0.10
Figure 9.
Tj(°C)
tp(ms)
1.00
0.0
-40
10.00
Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
-20
0
20
40
60
80
100
120
140
Figure 10. Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
6
2.0
Standard types
Snubberless and Logic level types
1.8
SW
1.6
5
C
B
4
1.4
1.2
3
T1635/CW/BW
1.0
2
0.8
1
0.6
Tj(°C)
(dV/dt)c (V/µs)
0.4
0
0.1
1.0
10.0
100.0
0
25
50
75
100
125
Figure 11. D2PAK thermal resistance junction to ambient versus copper surface under tab
(printed circuit board FR4, copper thickness: 35 µm)
Rth(j-a)(°C/W)
80
70
60
50
D2PAK
40
30
20
10
S(cm²)
0
0
2014-6-9
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8
12
16
5
20
24
28
32
36
40
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BTA16, BTB16
T1610, T1635
Figure 12. Ordering information scheme (BTA16 and BTB16 series)
BT A 16 - 600 BW RG
TRIAC series
Insulation
A = insulated
B = non insulated
Current
16 = 16 A
Voltage
600 = 600 V
800 = 800 V
Sensitivity and type
B = 50 mA Standard
C = 25 mA Standard
SW = 10 mA Logic Level
BW = 50 mA Snubberless
CW = 35 mA Snubberless
Packing mode
RG = Tube
Figure 13. Ordering information scheme (T16 series)
T 16 35 - 600 G (-TR)
TRIAC series
Current
16 = 16 A
Sensitivity
10 = 10 mA
35 = 35 mA
Voltage
600 = 600 V
800 = 800 V
Package
2
G = D PAK
Packing mode
Blank = Tube
-TR = Tape and reel
Table 7.
Product selector
Device(1)
Voltage (xxx)
Sensitivity
600 V
Type
Package
800 V
BTA/BTB16-xxxB
X
X
50 mA
Standard
TO-220AB
BTA/BTB16-xxxBW
X
X
50 mA
Snubberless
TO-220AB
BTA/BTB16-xxxC
X
25 mA
Standard
TO-220AB
BTA/BTB16-xxxCW
X
X
35 mA
Snubberless
TO-220AB
BTA/BTB16-xxxSW
X
X
10 mA
Logic level
TO-220AB
T1610-xxxG
X
X
10 mA
Logic level
D2PAK
T1635-xxxG
X
X
35 mA
Snubberless
D2PAK
1. BTB: non insulated TO-220AB package
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