IXYS CS30-14IO1 Phase control thyristor Datasheet

CS 30
Phase Control Thyristor
VRRM = 1200-1600 V
IT(RMS) = 49 A
IT(AV)M = 31 A
TO-247 AD
VRRM
VDRM
V
V
1200
1400
1600
1200
1400
1600
Type
A
G
Test Conditions
IT(RMS)
IT(AV)M
TVJ = TVJM
Tcase = 85°C; 180° sine
ITSM
TVJ = 45°C;
VR = 0 V
TVJ = TVJM
VR = 0 V
(di/dt)cr
C
A
G
CS 30-12io1
CS 30-14io1
CS 30-16io1
Symbol
I²t
C
C = Cathode, A = Anode, G = Gate
TAB = Anode
Maximum Ratings
Features
49
31
A
A
●
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
300
320
A
A
●
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
270
290
A
A
2
●
●
TVJ = 45°C
VR = 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
450
440
As
A2s
TVJ = TVJM
VR = 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
365
355
A2s
A2s
TVJ = TVJM
repetitive, IT = 40 A
f = 50 Hz, tP =200 ms
VD = 2/3 VDRM
IG = 0.3 A
non repetitive, IT = IT(AV)M
diG/dt = 0.3 A/ms
150
A/ms
(dv/dt)cr
TVJ = TVJM;
VDR = 2/3 VDRM
RGK = ¥; method 1 (linear voltage rise)
PGM
TVJ = TVJM
IT = IT(AV)M
tP = 30 ms
tP = 300 ms
●
●
●
500
A/ms
1000
V/ms
PGAV
W
W
W
VRGM
10
V
TVJ
TVJM
Tstg
-40...+125
125
-40...+125
°C
°C
°C
0.8...1.2
6
Nm
g
●
●
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
Motor control
Power converter
AC power controller
Switch-mode and resonant mode
power supplies
Light and temperature control
Advantages
●
Mounting torque M3
Thyristor for line frequency
International standard package
JEDEC TO-247
Planar passivated chip
Long-term stability of blocking
currents and voltages
Epoxy meets UL 94V-0
Applications
●
10
5
0.5
Md
Weight
(TAB)
●
●
●
Easy to mount with 1 screw
(isolated mounting screw hole)
Space and weight savings
Simple mounting
Improved temperature and power
cycling
030
VRSM
VDSM
1-3
CS 30
Symbol
Test Conditions
Characteristic Values
IR, ID
TVJ = TVJM; VR = VRRM; VD = VDRM
£
5
VT
IT
£
1.6
V
VT0
rT
For power-loss calculations only (TVJ = 125°C)
0.9
15
V
mW
VGT
VD = 6 V;
IGT
VGD
IGD
= 45 A; TVJ = 25°C
10
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
mA
V
VD = 6 V;
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
TVJ = 125°C
£
£
£
£
£
1.0
1.2
65
80
50
V
V
mA
mA
mA
TVJ = TVJM;
VD = 2/3 VDRM
£
£
0.2
5
V
mA
IL
TVJ = 25°C; tP = 10 ms
IG = 0.3 A; diG/dt = 0.3 A/ms
£
150
IH
TVJ = 25°C; VD = 6 V; RGK = ¥
£
100
mA
tgd
TVJ = 25°C; VD = 1/2 VDRM
IG = 0.3 A; diG/dt = 0.3 A/ms
£
2
ms
RthJC
RthJH
DC current
DC current
a
Max. acceleration, 50 Hz
VG
6
1
1
2 3
5
4
4: PGAV = 0.5 W
5: PGM = 1 W
6: PGM = 10 W
IGD, TVJ =125°C
mA
0.1
1
0.62
0.82
K/W
K/W
50
m/s2
10
100
Fig. 1 Gate trigger range
1000 mA 10000
IG
1000
TVJ = 25°C
µs
tgd
typ.
100
Limit
TO-247 AD and ISOPLUS 247 TM
Dim.
Millimeter
Min. Max.
Inches
Min.
Max.
A
B
19.81 20.32
20.80 21.46
0.780
0.819
0.800
0.845
C
D*
15.75 16.26
3.55 3.65
0.610
0.140
0.640
0.144
E
F
4.32
5.4
5.49
6.2
0.170
0.212
0.216
0.244
G
H
1.65
-
2.13
4.5
0.065
-
0.084
0.177
J
K
1.0
10.8
1.4
11.0
0.040
0.426
0.055
0.433
L
M
4.7
0.4
5.3
0.8
0.185
0.016
0.209
0.031
N
1.5
2.49
0.087
0.102
10
1
10
100
mA
1000
IG
Fig. 2 Gate controlled delay time tgd
* ISOPLUS 247 TM without hole
© 2000 IXYS All rights reserved
2-3
CS 30
60
1000
400
A
A
50
50Hz, 80%VRRM
VR = 0 V
A2s
ITSM
IT
300
40
30
TVJ = 45°C
I2t
TVJ = 45°C
400
200
300
20
TVJ = 125°C
TVJ = 125°C
200
100
TVJ = 125°C
10
0
0.0
0.5
TVJ = 25°C
1.0
1.5
0
0.001
V 2.0
100
0.01
0.1
VT
s
2
4 5 6 7 ms
8 910
t
3
t
Fig. 4 Surge overload current
ITSM: crest value, t: duration
Fig. 3 Forward characteristics
90
W
80
PT
1
1
Fig. 5 I2t versus time (1-10 ms)
50
A
45
70
1 K/W
2 K/W
60
50
40
DC
180° sin
120°
60°
30°
IT(AV)M
40
RthHA :
35
3 K/W
5 K/W
30
7.5 K/W
15 K/W
25
20
30
DC
180° sin
120°
60°
30°
20
10
15
10
5
0
0
0
10
20
30
40
A
0
25
IT(AV)M
50
75
100
125 °C 150
0
20
40
60
Tamb
Fig. 6 Power dissipation versus forward current and ambient temperature
80 100 120 °C
Tcase
Fig. 7 Max. forward current at case
temperature
1.0
RthJC for various conduction angles d:
K/W
30°
60°
120°
180°
DC
ZthJC
0.5
d
RthJC (K/W)
DC
180°
120°
60°
30°
0.62
0.71
0.748
0.793
0.817
Constants for ZthJC calculation:
i
0.0
0.001
1
2
3
0.01
0.1
1
Fig. 8 Transient thermal impedance junction to case
© 2000 IXYS All rights reserved
s
10
Rthi (K/W)
ti (s)
0.206
0.362
0.052
0.013
0.118
1.488
100
t
3-3
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