AWB51D7 AWB51D7 Data Sheet 1.2 GHz CATV Push-pull Amplifier MMIC 1. Product Overview 1.1 Features 50 ~ 1200 MHz Bandwidth 18.2 dB Gain at 500 MHz CSO : 71 dBc, CTB : 63 dBc @ Pout = 103 dBV flat for NTSC 79 channels + QAM256 75 channels, -6 dB offset Robust under Hard Operating Conditions +8 V, 340 mA Supply 1.2 Applications CATV Line Amplifiers HFC Nodes Head End Equipment 1.3 Package Profile & RoHS Compliance TSSOP24, 7.8x6.4 mm2, surface mount 1/10 ASB Inc. [email protected] RoHS-compliant July 2014 AWB51D7 2. Summary on Product Performances 2.1 Typical Performance Supply voltage = +8 V, TA = +25 C, ZO = 75 Parameter Typical Unit Frequency 50 500 1000 1200 MHz Gain 18.1 18.2 18.9 19.6 dB S11 -21 -18 -22 -18.5 dB S22 -21 -16.5 -22 -16.5 dB Noise Figure 2.5 2.2 2.4 2.4 dB CSO1) 71 dBc CTB1) 63 dBc Current 340 mA Device Voltage +8 V 1) CSO & CTB measured at Pout = 103 dBV flat for NTSC 79 channels + QAM 256 75 channels, -6 dB offset. 2.2 Product Specification Supply voltage = +8 V, TA = +25 C, ZO = 75 Parameter 2/10 Min Typ Max Unit Frequency 500 MHz Gain 18.2 dB S11 -18 dB S22 -16.5 dB Noise Figure 2.2 dB Current 340 mA Device Voltage +8 V ASB Inc. [email protected] July 2014 AWB51D7 2.3 Pin Configuration Pin Description Simplified Outline 3, 10 RF_IN 6, 7 Current Adjustable 18, 19 VCG Adjustable 15, 22 RF_ OUT Others NC or GND Note: Backside metal paddle is RF and DC ground. 2.4 Absolute Maximum Ratings Parameters Max. Ratings Operation Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +10 V Maximum Current 450 mA Operation Junction Temperature +150 C Input RF Power (CW, 75 matched) +24 dBm 2.5 Thermal Resistance Symbol Description Typ Unit Rth Thermal resistance from junction to lead 9 C/W 2.6 ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class 1B Voltage Level: 750 V MM Class A Voltage Level: 100 V CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Moisture Sensitivity Level MSL 3 at 260 C reflow 3/10 ASB Inc. [email protected] July 2014 AWB51D7 3. Application: 50 ~ 1200 MHz (75 Push-pull, Vsupply = +8 V) 3.1 Application Circuit & Evaluation Board Vdevice = +8 V C4 C5 T1(MABA-007159) RF IN C3 R1 L1 C6 L2 C1 C2 R4 R3 T2(MABA-007159) RF OUT R5 L4 C7 C8 AWB51D7 R2 C11 C9 L3 C12 C10 Vdevice = +8 V PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-T24-H4 Bill of Material 4/10 Symbol Value Size Description Manufacturer AWB51D7 - - MMIC Amplifier ASB C1, C2, C7, C8 1 F 0603 DC blocking capacitor Murata C3, C9 1 F 0603 Feedback capacitor Murata C4, C10 10 F 0805 Decoupling capacitor Murata C5, C11 1.2 pF 0603 Matching capacitor Murata C6, C12 1 pF 0402 Matching capacitor Murata L1, L3 1 H 1206 RF choke inductor Murata L2, L4 1.5 nH 0603 Matching inductor Murata R1, R2 430 0603 Feedback resistor Samsung R3 22 0402 Current adjust resistor Samsung R4, R5 2 k 0402 VCG adjust resistor Samsung T1, T2 1:1 - Transformer balun MACOM ASB Inc. [email protected] July 2014 AWB51D7 3.2 Performance Table Supply voltage = +8 V, TA = +25 C, ZO = 75 Parameter Typical Unit Frequency 50 500 1000 1200 MHz Gain 18.1 18.2 18.9 19.6 dB S11 -21 -18 -22 -18.5 dB S22 -21 -16.5 -22 -16.5 dB Noise Figure 2.5 2.2 2.4 2.4 dB CSO1) 71 dBc CTB1) 63 dBc Current 340 mA Device Voltage +8 V 1) CSO & CTB measured at Pout = 103 dBV flat for NTSC 79 channels + QAM 256 75 channels, -6 dB offset. Plot of S-parameter & Stability Factor 40 10 S-parameter (dB) 30 9 S21 20 10 7 0 6 -10 5 S11 -20 4 S12 -30 3 S22 -40 2 K -50 1 -60 0 1200 0 5/10 8 200 ASB Inc. 400 600 800 Frequency (MHz) [email protected] Stability Factor, K 3.3 1000 July 2014 AWB51D7 4. Application: 50 ~ 1000 MHz (75 Push-pull, Vsupply = +8 V) 4.1 Application Circuit & Evaluation Board Vdevice = +8 V C4 C5 C3 R1 T1(MABA-007159) C1 RF IN L1 C6 L2 C2 L4 C8 R4 R3 T2(MABA-007159) RF OUT R5 C7 AWB51D7 R2 C11 C9 L3 C12 C10 Vdevice = +8 V PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-T24-H4 Bill of Material 6/10 Symbol Value Size Description Manufacturer AWB51D7 - - MMIC Amplifier ASB C1, C2, C7, C8 1 F 0603 DC blocking capacitor Murata C3, C9 1 F 0603 Feedback capacitor Murata C4, C10 10 F 0805 Decoupling capacitor Murata C5, C6, C11,C12 0.5 pF 0402 Matching capacitor Murata L1, L3 1 H 1206 RF choke inductor Murata L2, L4 1.8 nH 0603 Matching inductor Murata R1, R2 430 0603 Feedback resistor Samsung R3 22 0402 Current adjust resistor Samsung R4, R5 2 k 0402 VCG adjust resistor Samsung T1, T2 1:1 - Transformer balun MACOM ASB Inc. [email protected] July 2014 AWB51D7 4.2 Performance Table Supply voltage = +8 V, TA = +25 C, ZO = 75 Parameter Typical Unit Frequency 50 500 860 1000 MHz Gain 18.1 18.2 18.6 18.9 dB S11 -20 -19 -22 -18 dB S22 -20 -18 -22 -18 dB Noise Figure 2.5 2.3 2.4 2.4 dB CSO1) 71 dBc CTB1) 63 dBc Current 340 mA Device Voltage +8 V 1) CSO & CTB measured at Pout = 103 dBV flat for NTSC 79 channels + QAM 256 75 channels, -6 dB offset. Plot of S-parameter & Stability Factor 40 10 S-parameter (dB) 30 9 S21 20 8 10 7 0 6 -10 S11 -20 -30 S12 S22 -40 4 3 2 K -50 1 -60 0 1200 0 7/10 5 200 ASB Inc. 400 600 800 Frequency (MHz) [email protected] Stability Factor, K 4.3 1000 July 2014 AWB51D7 5. Package Outline (TSSOP24) Lot No. Part No. Symbols AWB51D7 Pxxxx A A1 A2 b C D D1 E E1 E2 e L y L1-L1 L1 Dimensions (In mm) MIN NOM ----0.00 ---0.80 1.00 0.19 --0.09 --7.70 7.80 4.086 4.286 6.20 6.40 4.30 4.40 2.55 2.75 --0.65 0.45 0.60 ------0 ----1.00REF MAX 1.15 0.10 1.05 0.30 0.20 7.90 4.486 6.60 4.50 2.95 --0.75 0.10 8 0.12 6. Surface Mount Recommendation (In mm) 2.20 NOTE 3.42 1. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 0.35 0.40 1.55 0.76 8/10 3. Add mounting screws near the part to fasten the board to a heat sinker. Ensure that the ground & thermal via region contacts the heat sinker. 0.65 7.80 0.64 2. To ensure reliable operation, device ground paddle-to-ground pad soldering is critical. 4. A proper heat dissipation path underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can result from inappropriate heat dissipation. 0.34 ASB Inc. [email protected] July 2014 ASL912 9/10 ASB Inc. [email protected] January 2014 AWB51D7 0 7. Recommended Soldering Reflow Profile 260 C 20~40 sec Ramp-up (3 C/sec) Ramp-down (6 C/sec) 200 C 150 C 60~180 sec (End of Datasheet) 10/10 ASB Inc. [email protected] July 2014