Ordering number : ENA1348A PCP1203 Bipolar Transistor 30V, 1.5A, Low VCE(sat), NPN Single PCP http://onsemi.com Applications • DC / DC converters, relay drivers, lamp drivers, motor drivers, Inverters, IGBT gate drivers Features • • • Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage High allowable power dissipation • • • Large current capacity High speed switching Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO 40 V 30 V 5 V Collector Current VEBO IC 1.5 A Collector Current (Pulse) ICP 5 A Collector-to-Emitter Voltage Emitter-to-Base Voltage Continued on next page. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7007B-0047 • Package : PCP • JEITA, JEDEC : SC-62, SOT-89, TO-243 • Minimum Packing Quantity : 1,000 pcs./reel Top View PCP1203-TD-H 1.6 Marking QJ Packing Type: TD 4.0 1.0 2.5 1.5 LOT No. 4.5 TD 1 2 3 0.4 0.4 0.5 1.5 Electrical Connection 3.0 2 0.75 1 3 1 : Base 2 : Collector 3 : Emitter Bottom View PCP Semiconductor Components Industries, LLC, 2013 September, 2013 91212 TKIM/N1208EA MSIM TC-00001722 No.A1348-1/7 PCP1203 Continued from preceding page. Parameter Symbol Base Current Conditions Ratings IB Collector Dissipation Unit 300 PC Junction Temperature Tj Storage Temperature Tstg mA When mounted on ceramic substrate (450mm2×0.8mm) 1.3 W Tc=25°C 3.5 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain 0.1 μA 0.1 μA VCE=2V, IC=100mA Cob Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) Turn-On Time Storage Time Fall Time 200 560 VCE=10V, IC=300mA 500 VCB=10V, f=1MHz IC=0.75A, IB=15mA MHz 8 pF 150 225 mV 0.85 1.2 V IC=0.75A, IB=15mA IC=10μA, IE=0A 40 V IC=1mA, RBE=∞ 30 V V(BR)EBO ton IE=10μA, IC=0A 5 tstg tf See specified Test Circuit. V(BR)CBO V(BR)CEO Emitter-to-Base Breakdown Voltage Unit max VEB=4V, IC=0A Gain-Bandwidth Product Collector-to-Emitter Breakdown Voltage typ VCB=30V, IE=0A Output Capacitance Base-to-Emitter Saturation Voltage min ICBO IEBO hFE fT Collector-to-Base Breakdown Voltage Ratings Conditions V 35 ns 205 ns 30 ns Switching Time Test Circuit IB1 PW=50μs D.C.≤1% OUTPUT IB2 INPUT RB RL 50Ω + 820μF VCC=12V IC=20IB1= --20IB2=0.75A Ordering Information Shipping memo PCP 1,000pcs./reel Pb Free and Halogen Free IC -- VCE VCE=2V 30mA 40mA 1.4 20mA 1.6 1.4 10mA 8mA 6mA 4mA 1.2 1.0 0.8 0.6 2mA 1.2 1.0 0.8 0.6 0.4 0.4 --25°C 1.8 IC -- VBE 1.6 Collector Current, IC -- A 50 mA 2.0 Collector Current, IC -- A Package Ta=7 5°C 25°C Device PCP1203-TD-H 0.2 0.2 IB=0mA 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Collector-to-Emitter Voltage, VCE -- V 0.9 0 1.0 IT14121 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 IT14122 No.A1348-2/7 PCP1203 hFE -- IC 7 VCE=2V Gain-Bandwidth Product, f T -- MHz Ta=75°C DC Current Gain, hFE VCE=10V 2 5 25°C 3 f T -- IC 3 --25°C 2 100 7 1000 7 5 3 2 100 7 5 3 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC -- A 2 0.01 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF 2 10 7 5 5 7 2 1.0 IT01680 2 0.1 7 25 5 7 Ta= 3 °C 5°C 5°C --2 2 0.01 2 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 7 0.01 5 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A IT01682 VCE(sat) -- IC 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 2 0.1 C 25° C 75° Ta= C --25° 5 3 2 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC -- A Ta=--25°C 7 75°C 5 25°C 3 2 3 5 μs 100 s 0μ Collector Dissipation, PC -- W C n io at er op a= (T 3 2 ) °C 25 0.1 7 5 Ta=25°C Single pulse When mounted on ceramic substrate (450mm2×0.8mm) 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector-to-Emitter Voltage, VCE -- V 2 3 3 5 7 1.0 2 3 IT14126 PC -- Ta 1.4 50 D 1.0 7 5 2 When mounted on ceramic substrate (450mm2×0.8mm) <10μs 1m s 7 0.1 Collector Current, IC -- A 1.6 10 10 0m m s s IC=1.5A 2 3 1.0 2 0.01 3 ASO 0.01 0.01 2 IT14125 ICP=5A 3 IC / IB=50 IC / IB=50 7 2 IT14124 VBE(sat) -- IC 3 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 IC / IB=20 3 Collector Current, IC -- A 2 0.1 3 3 3 2 7 VCE(sat) -- IC 5 5 3 2 5 f=1MHz 7 10 7 5 3 Collector Current, IC -- A Cob -- VCB 100 2 IT14123 1.3 1.2 1.0 0.8 0.6 0.4 0.2 0 5 IT14127 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14113 No.A1348-3/7 PCP1203 PC -- Tc 4.0 Collector Dissipation, PC -- W 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT14114 No.A1348-4/7 PCP1203 Bag Packing Specification PCP1203-TD-H No.A1348-5/7 PCP1203 Outline Drawing PCP1203-TD-H Land Pattern Example Mass (g) Unit 0.058 mm * For reference Unit: mm 0.9 2.2 3.7 45° 45° 1.0 1.8 1.5 1.0 1.5 3.0 No.A1348-6/7 PCP1203 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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