ON MJD5731T4 High voltage pnp silicon power transistor Datasheet

MJD5731
Preferred Device
High Voltage PNP Silicon
Power Transistors
. . . designed for line operated audio output amplifier,
SWITCHMODE power supply drivers and other switching
applications.
• 350 V (Min) - VCEO(sus)
• 1.0 A Rated Collector Current
• PNP Complements to the MJD47 thru MJD50 Series
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-
Continuous
Peak
Symbol
MJD5731
Unit
VCEO
350
Vdc
VEB
5
Vdc
IC
1.0
3.0
Adc
15
0.12
Watts
W/°C
1.56
0.0125
Watts
W/°C
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD
Total Power Dissipation (1)
@ TA = 25°C
Derate above 25°C
PD
Unclamped Inductive Load Energy
(See Figure )
E
20
mJ
TJ, Tstg
- 55 to 150
°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction-to-Case
Characteristic
RJC
8.33
°C/W
Thermal Resistance, Junction-to-Ambient
(Note 1)
RJA
80
°C/W
TL
260
°C
Lead Temperature for Soldering
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SILICON
POWER TRANSISTORS
1.0 A, 350 V
15 W
MARKING
DIAGRAM
J5731
DPAK
CASE 369
J5731
DPAK
CASE 369A
Style 1
xx
A
WL, L
YY, Y
WW, W
1. These ratings are applicable when surface mounted on the minimum pad size
recommended.
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MJD5731T4
DPAK
2500/ Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2003
March, 2003 - Rev. 0
1
Publication Order Number:
MJD5731/D
0.243
6.172
0.063
1.6
0.118
3.0
0.100
2.54
0.165
4.191
0.190
4.826
MJD5731
inches
mm
MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
VCEO(sus)
350
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 2)
(IC = 30 mAdc, IB = 0)
Vdc
-
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
(VCE = 250 Vdc, IB = 0)
(VCE = 350 Vdc, VBE = 0)
(VBE = 5.0 Vdc, IC = 0)
ICEO
mAdc
-
0.1
-
0.01
-
0.5
mAdc
30
10
175
-
-
ICES
IEBO
mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.3 Adc, VCE = 10 Vdc)
(IC = 1.0 Adc, VCE = 10 Vdc)
hFE
Collector-Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.2 Adc)
VCE(sat)
-
1.0
Vdc
Base-Emitter On Voltage
(IC = 1.0 Adc, VCE = 10 Vdc)
VBE(on)
-
1.5
Vdc
Current Gain - Bandwidth Product
(IC = 0.2 Adc, VCE = 10 Vdc, f = 2.0 MHz)
fT
10
-
MHz
Small-Signal Current Gain
(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
25
-
-
DYNAMIC CHARACTERISTICS
2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
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2
MJD5731
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
200
VCE = 10 V
100
TJ = 150°C
50
25°C
30
−55 °C
20
10
5.0
3.0
2.0
0.02 0.03
0.05
0.1
0.2 0.3
0.5
IC, COLLECTOR CURRENT (AMPS)
1.0
2.0
1.4
1.2
1
0.6
V, VOLTAGE (V)
V, VOLTAGE (VOLTS)
1.2
TJ = − 55°C
0.8
25°C
150°C
0.8
0.6
0.4
0.2
0.2
0.1
0.2
0.3
0.5
1.0
0
0.02
2.0
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Base-Emitter Voltage
IC, COLLECTOR CURRENT (AMP)
10
1.0
TC = 25°C
0.5
dc
500 s
0.2
0.1
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.05
0.02
0.01
5.0
2.0
VBE(sat) @ IC/IB = 5 V
VBE(on) @ VCE = 4 V
TJ = 25°C
VCE(sat) @ IC/IB = 5 V
0.1
0.2
0.4 0.6
0.04 0.06
IC, COLLECTOR CURRENT (AMPS)
1
2
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC - VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150°C. TJ(pk) may be calculated from the data in
Figure 6. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
100 s
1.0ms
1.0
Figure 4. “On” Voltages
5.0
2.0
0.2 0.3
0.1
0.5
IC, COLLECTOR CURRENT (AMPS)
1
0.4
0.05
0.05
Figure 2. Collector-Emitter Saturation Voltage
1.2
0
0.02 0.03
VCE(sat)) @ IC/IB = 5.0
0
0.02 0.03
1.4
0.6
150°C
0.2
1.4
VBE(sat) @ IC/IB = 5.0
−55 °C
0.4
Figure 1. DC Current Gain
1.0
TJ = 25°C
0.8
10
20 30
50
100
200 300
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
500
Figure 5. Forward Bias Safe Operating Area
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3
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
MJD5731
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.02
0.01
0.03
SINGLE PULSE
0.02
0.01
0.01
0.02 0.03
0.05
P(pk)
RJC(t) = r(t) RJC
RJC = 8.33°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) JC(t)
0.05
0.1
0.07
0.05
0.1
0.2 0.3
0.5
1
2 3
5
t, TIME (ms)
10
20
t1
t2
DUTY CYCLE, D = t1/t2
30
50
100
200 300
500
1k
Figure 6. Thermal Response
TURN−ON PULSE
t1
VBE(off)
Vin
0V
VCC
t1 ≤ 7.0 ns
100 ≤ t2 < 500 s
t3 < 15 ns
APPROX
.
−11 V
t2
RC
SCOPE
RB
Vin
t3
Cjd << Ceb
51
+4.0 V
APPROX. +9.0 V
DUTY CYCLE ≈ 2.0%
TURN−OFF PULSE
Figure 7. Switching Time Equivalent Circuit
5.0
1.0
0.2
2.0
td
t, TIME (s)
µ
t, TIME (s)
µ
0.3
TJ = 25°C
VCC = 200 V
IC/IB = 5.0
ts
3.0
TJ = 25°C
VCC = 200 V
IC/IB = 5.0
tr
0.5
0.1
0.05
tf
1.0
0.5
0.3
0.2
0.03
0.1
0.02
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
IC, COLLECTOR CURRENT (AMPS)
1.0
0.05
0.02 0.03
2.0
Figure 8. Turn-On Resistive Switching Times
0.05
0.1
0.2 0.3
0.5
IC, COLLECTOR CURRENT (AMPS)
1.0
Figure 9. Resistive Turn-Off Switching Times
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4
2.0
MJD5731
Test Circuit
Voltage and Current Waveforms
VCE MONITOR
RBB1 =
150 MJE171
INPUT
TUT
100 mH
+
50
−
50
VBB1 = 10 V
+
−
RBB2 =
100 VBB2 =
0
INPUT
VOLTAGE
0V
tw ≈ 3 ms
(SEE NOTE 1)
−5 V
100 ms
VCC = 20 V
IC MONITOR
0.63 A
COLLECTOR
CURRENT 0 V
RS =
0.1 VCER
COLLECTOR
VOLTAGE
10 V
VCE(sat)
Figure 10. Inductive Load Switching
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5
MJD5731
PACKAGE DIMENSIONS
DPAK
CASE 395A-13
ISSUE AB
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
-T-
E
R
4
Z
A
S
1
2
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
T
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
INCHES
MIN
MAX
0.235
0.250
0.250
0.265
0.086
0.094
0.027
0.035
0.033
0.040
0.037
0.047
0.180 BSC
0.034
0.040
0.018
0.023
0.102
0.114
0.090 BSC
0.175
0.215
0.020
0.050
0.020
−−−
0.030
0.050
0.138
−−−
STYLE 1:
PIN 1.
2.
3.
4.
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6
BASE
COLLECTOR
EMITTER
COLLECTOR
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.84
1.01
0.94
1.19
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.45
5.46
0.51
1.27
0.51
−−−
0.77
1.27
3.51
−−−
MJD5731
PACKAGE DIMENSIONS
DPAK
CASE 395-07
ISSUE M
C
B
V
E
R
4
A
1
2
3
S
-TSEATING
PLANE
K
J
F
H
D
G
3 PL
0.13 (0.005)
M
T
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7
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
INCHES
MIN
MAX
0.235
0.250
0.250
0.265
0.086
0.094
0.027
0.035
0.033
0.040
0.037
0.047
0.090 BSC
0.034
0.040
0.018
0.023
0.350
0.380
0.175
0.215
0.050
0.090
0.030
0.050
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.84
1.01
0.94
1.19
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.46
1.27
2.28
0.77
1.27
MJD5731
SWITCHMODE is a trademarks of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
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MJD5731/D
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