Panasonic MA10701 Silicon epitaxial planar type Datasheet

Schottky Barrier Diodes (SBD)
MA3X701
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
+ 0.2
2.8 − 0.3
+ 0.25
0.65 ± 0.15
1.45
1.5 − 0.05
1
0.95
3
+ 0.1
0.4 − 0.05
+ 0.2
2.9 − 0.05
• Mini type 3-pin package
• Allowing to rectify under (IF(AV) = 700 mA) condition
1.9 ± 0.2
■ Features
0.95
0.65 ± 0.15
2
VR
30
V
Repetitive peak reverse voltage
VRRM
30
V
Average forward current
IF(AV)
700
mA
Non-repetitive peak forward
surge current*
IFSM
5
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +150
°C
+ 0.1
0.16 − 0.06
Unit
0.1 to 0.3
0.4 ± 0.2
0 to 0.1
Rating
0.8
Reverse voltage (DC)
Symbol
+ 0.2
Parameter
1.1 − 0.1
■ Absolute Maximum Ratings Ta = 25°C
1 : Anode
2 : NC
JEDEC : TO-236
3 : Cathode
EIAJ : SC-59
Mini Type Package (3-pin)
Marking Symbol: M4P
Internal Connection
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
1
3
2
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
80
µA
0.55
V
Reverse current (DC)
IR
VR = 30 V
Forward voltage (DC)
VF
IZ = 700 mA
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
120
pF
Reverse recovery time*2
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
7.5
ns
Rth(j-a)(1)
420
°C/W
Rth(j-a)(2)
330
°C/W
Thermal resistance (1)
Thermal resistance
(2)*1
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 400 MHz
3. *1 : Obtained by fixing the element to the printed-circuit board (copper foil area 0.8 mm × 20 mm)
*2 : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
1
MA3X701
Schottky Barrier Diodes (SBD)
IF  V F
Ta = 125°C
0.7
Ta = 125°C
75°C
25°C
− 20°C
10−2
10−3
10−4
Reverse current IR (µA)
103
Forward voltage VF (V)
Forward current IF (A)
104
0.8
10−1
0.6
0.5
IF = 700 mA
0.4
0.3
100 mA
0.2
0
0.1
0.2
0.3
0.4
0.5
0
−40
0.6
25°C
10−1
0
40
80
120
160
200
IR  T a
10
1
120
Ambient temperature Ta
160
(°C)
25
30
IF(surge)  tW
250
200
150
100
50
0
80
20
1 000
200
Forward surge current IF(surge) (A)
Terminal capacitance Ct (pF)
100
40
15
Ta = 25°C
15 V
6V
0
10
Ct  VR
VR = 30 V
0.1
−40
5
Reverse voltage VR (V)
300
1 000
0
Ambient temperature Ta (°C)
10 000
Reverse current IR (µA)
10
1
Forward voltage VF (V)
2
75°C
102
10 mA
0.1
10−5
IR  VR
VF  Ta
1
0
5
10
15
20
25
Reverse voltage VR
(V)
30
300
IF(surge)
tW
100
30
10
3
1
0.3
0.1
0.1
0.3
1
3
10
30
Pulse width tW (ms)
100
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