APTGT150A120 Phase leg Fast Trench + Field Stop IGBT® Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control OUT Q2 G2 E2 0/VBUS G1 VBUS 0/VBUS OUT E1 E2 G2 Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1200 220 150 350 ±20 690 Tj = 125°C 300A @ 1150V TC = 25°C TC = 80°C TC = 25°C Unit V A V W May, 2005 Q1 G1 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGT150A120 – Rev 0 VBUS E1 VCES = 1200V IC = 150A @ Tc = 80°C APTGT150A120 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Turn-on Delay Time Rise Time Td(off) Tf Eon Eoff Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 150A Tj = 125°C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz 5.0 Min Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 150A R G = 2.2Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 150A R G = 2.2Ω Test Conditions Typ 1.7 2.0 5.8 Typ 10.7 0.56 0.48 280 40 450 Max Unit 1 2.1 mA 6.5 600 V nA Max Unit nF ns 75 290 45 ns 550 90 14 16 Min Typ mJ Max 1200 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current VR=1200V IF(A V) Maximum Average Forward Current 50% duty cycle VF Diode Forward Voltage IF = 150A trr Reverse Recovery Time IF = 150A VR = 600V Qrr Reverse Recovery Charge di/dt =3000A/µs Unit V Tj = 25°C Tj = 125°C 250 500 Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C 150 1.6 1.6 170 Tj = 125°C Tj = 25°C 280 15 Tj = 125°C 29 µA A 2.1 V ns µC May, 2005 IRM V APT website – http://www.advancedpower.com 2-5 APTGT150A120 – Rev 0 Symbol Cies Coes Cres Td(on) Tr Td(off) Min APTGT150A120 Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.18 0.32 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g APT website – http://www.advancedpower.com 3-5 APTGT150A120 – Rev 0 May, 2005 Package outline (dimensions in mm) APTGT150A120 Typical Performance Curve Output Characteristics (VGE =15V) 300 Output Characteristics 300 T J = 125°C TJ =25°C 250 250 VGE =17V 150 100 50 50 VGE=9V 0 0 1 2 VCE (V) 3 0 4 32 T J=25°C 250 24 E (mJ) 150 100 2 VCE (V) VCE = 600V VGE = 15V RG = 2.2Ω TJ = 125°C 28 TJ=125°C 200 1 3 4 Energy losses vs Collector Current Transfert Characteristics 300 IC (A) VGE =15V 150 100 0 TJ =125°C 20 Eon Eoff 16 12 Er 8 50 4 0 0 5 6 7 8 9 10 11 0 12 50 Switching Energy Losses vs Gate Resistance 34 26 22 150 200 250 300 Reverse Bias Safe Operating Area 350 VCE = 600V VGE =15V IC = 150A T J = 125°C 30 100 IC (A) VGE (V) Eon 300 250 Eoff IC (A) E (mJ) VGE=13V 200 IC (A) IC (A) T J=125°C 200 18 14 Er 10 200 150 VGE =15V TJ=125°C RG=2.2Ω 100 50 6 2 0 0 2 4 6 8 10 12 14 Gate Resistance (ohms) 16 18 0 300 600 900 V CE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration IGBT 0.9 0.16 0.7 May, 2005 0.12 0.5 0.08 0.3 0.04 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) APT website – http://www.advancedpower.com 4-5 APTGT150A120 – Rev 0 Thermal Impedance (°C/W) 0.2 APTGT150A120 Forward Characteristic of diode 300 VCE =600V D=50% RG=2.2Ω 50 ZCS 40 200 TJ=125°C Tc=75°C 30 TJ=25°C 250 IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 60 ZVS T J=125°C 150 100 20 Hard switching 10 TJ=125°C 50 TJ=25°C 0 0 0 40 80 120 IC (A) 160 200 0 240 0.4 0.8 1.2 1.6 V F (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.15 Diode 0.5 0.3 0.1 0.05 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 5-5 APTGT150A120 – Rev 0 May, 2005 rectangular Pulse Duration (Seconds)