ADPOW APTGT150A120 Phase leg fast trench field stop igbt power module Datasheet

APTGT150A120
Phase leg
Fast Trench + Field Stop IGBT®
Power Module
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
OUT
Q2
G2
E2
0/VBUS
G1
VBUS
0/VBUS
OUT
E1
E2
G2
Features
• Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
1200
220
150
350
±20
690
Tj = 125°C
300A @ 1150V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
V
W
May, 2005
Q1
G1
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-5
APTGT150A120 – Rev 0
VBUS
E1
VCES = 1200V
IC = 150A @ Tc = 80°C
APTGT150A120
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Turn-on Delay Time
Rise Time
Td(off)
Tf
Eon
Eoff
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Reverse diode ratings and characteristics
Symbol Characteristic
VRRM
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE = 15V
IC = 150A
Tj = 125°C
VGE = VCE , IC = 3 mA
VGE = 20V, VCE = 0V
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
5.0
Min
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 150A
R G = 2.2Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 150A
R G = 2.2Ω
Test Conditions
Typ
1.7
2.0
5.8
Typ
10.7
0.56
0.48
280
40
450
Max
Unit
1
2.1
mA
6.5
600
V
nA
Max
Unit
nF
ns
75
290
45
ns
550
90
14
16
Min
Typ
mJ
Max
1200
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=1200V
IF(A V)
Maximum Average Forward Current
50% duty cycle
VF
Diode Forward Voltage
IF = 150A
trr
Reverse Recovery Time
IF = 150A
VR = 600V
Qrr
Reverse Recovery Charge
di/dt =3000A/µs
Unit
V
Tj = 25°C
Tj = 125°C
250
500
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
150
1.6
1.6
170
Tj = 125°C
Tj = 25°C
280
15
Tj = 125°C
29
µA
A
2.1
V
ns
µC
May, 2005
IRM
V
APT website – http://www.advancedpower.com
2-5
APTGT150A120 – Rev 0
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Min
APTGT150A120
Thermal and package characteristics
Symbol Characteristic
Min
IGBT
Diode
RthJC
Junction to Case
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
To heatsink
For terminals
M6
M5
2500
-40
-40
-40
3
2
Typ
Max
0.18
0.32
Unit
°C/W
V
150
125
100
5
3.5
280
°C
N.m
g
APT website – http://www.advancedpower.com
3-5
APTGT150A120 – Rev 0
May, 2005
Package outline (dimensions in mm)
APTGT150A120
Typical Performance Curve
Output Characteristics (VGE =15V)
300
Output Characteristics
300
T J = 125°C
TJ =25°C
250
250
VGE =17V
150
100
50
50
VGE=9V
0
0
1
2
VCE (V)
3
0
4
32
T J=25°C
250
24
E (mJ)
150
100
2
VCE (V)
VCE = 600V
VGE = 15V
RG = 2.2Ω
TJ = 125°C
28
TJ=125°C
200
1
3
4
Energy losses vs Collector Current
Transfert Characteristics
300
IC (A)
VGE =15V
150
100
0
TJ =125°C
20
Eon
Eoff
16
12
Er
8
50
4
0
0
5
6
7
8
9
10
11
0
12
50
Switching Energy Losses vs Gate Resistance
34
26
22
150
200
250
300
Reverse Bias Safe Operating Area
350
VCE = 600V
VGE =15V
IC = 150A
T J = 125°C
30
100
IC (A)
VGE (V)
Eon
300
250
Eoff
IC (A)
E (mJ)
VGE=13V
200
IC (A)
IC (A)
T J=125°C
200
18
14
Er
10
200
150
VGE =15V
TJ=125°C
RG=2.2Ω
100
50
6
2
0
0
2
4
6
8 10 12 14
Gate Resistance (ohms)
16
18
0
300
600
900
V CE (V)
1200
1500
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
IGBT
0.9
0.16
0.7
May, 2005
0.12
0.5
0.08
0.3
0.04
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
APT website – http://www.advancedpower.com
4-5
APTGT150A120 – Rev 0
Thermal Impedance (°C/W)
0.2
APTGT150A120
Forward Characteristic of diode
300
VCE =600V
D=50%
RG=2.2Ω
50
ZCS
40
200
TJ=125°C
Tc=75°C
30
TJ=25°C
250
IC (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
60
ZVS
T J=125°C
150
100
20
Hard
switching
10
TJ=125°C
50
TJ=25°C
0
0
0
40
80
120
IC (A)
160
200
0
240
0.4
0.8
1.2
1.6
V F (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
Thermal Impedance (°C/W)
0.35
0.3
0.9
0.25
0.7
0.2
0.15
Diode
0.5
0.3
0.1
0.05
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
5-5
APTGT150A120 – Rev 0
May, 2005
rectangular Pulse Duration (Seconds)
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