FX50KMJ-2 High-Speed Switching Use Pch Power MOS FET REJ03G1452-0200 (Previous: MEJ02G0284-0101) Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : –100 V rDS(ON) (max) : 50 mΩ ID : –50 A Integrated Fast Recovery Diode (TYP.) : 100 ns Viso : 2000 V Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) 3 1. Gate 2. Drain 3. Source 1 1 2 3 2 Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso Ratings –100 ±20 –50 –200 –50 –50 –200 35 – 55 to +150 – 55 to +150 2000 Unit V V A A A A A W °C °C V — 2.0 g Mass Rev.2.00 Aug 07, 2006 page 1 of 6 Conditions VGS = 0 V VDS = 0 V L = 30 µH AC for 1 minute, Terminal to case Typical value FX50KMJ-2 Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Symbol V(BR)DSS IGSS IDSS VGS(th) rDS(ON) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) Min –100 — — –1.3 — — — — — — — — — — — — — Typ — — — –1.8 39 47 –0.98 49.2 11130 896 480 57 118 828 380 –1.0 — Max — ±0.1 –0.1 –2.3 50 61 –1.25 — — — — — — — — –1.5 3.57 Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W trr — 100 — ns Reverse recovery time Rev.2.00 Aug 07, 2006 page 2 of 6 Test Conditions ID = –1 mA, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = –100 V, VGS = 0 V ID = –1 mA, VDS = –10 V ID = –25 A, VGS = –10 V ID = –25 A, VGS = – 4 V ID = –25 A, VGS = –10 V ID = –25 A, VDS = –10 V VDS = –10 V, VGS = 0 V, f = 1MHz VDD = –50 V, ID = –25 A, VGS = –10 V, RGEN = RGS = 50 Ω IS = –25 A, VGS = 0 V Channel to case IS = –50 A, dis/dt = 100 A/µs FX50KMJ-2 Performance Curves Maximum Safe Operating Area Power Dissipation Derating Curve –3 –2 Drain Current ID (A) 30 20 10 –7 –5 100µs –3 –2 –101 –7 –5 –3 –2 1ms Tc = 25°C Single Pulse –100 DC –7 –5 0 0 –100 Drain Current ID (A) tw = 10µs –102 40 50 100 150 –3 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 200 Case Temperature Tc (°C) Drain-Source Voltage VDS (V) Output Characteristics (Typical) Output Characteristics (Typical) VGS = –10V –80 –50 Tc = 25°C Pulse Test –8V –6V –5V –60 –4V –40 –3V –20 Drain Current ID (A) Power Dissipation PD (W) 50 VGS = –10V –4V –40 –8V –6V –5V –30 –3V –20 –10 PD = 35W PD = 35W 0 –2 –4 –6 –8 –2.0 –3.0 –4.0 –5.0 On-State Voltage vs. Gate-Source Voltage (Typical) On-State Resistance vs. Drain Current (Typical) –8 –6 ID = –100A –4 –50A –2 –25A –2 –4 –6 –8 Gate-Source Voltage VGS (V) Rev.2.00 –1.0 Drain-Source Voltage VDS (V) Tc = 25°C Pulse Test 0 0 Drain-Source Voltage VDS (V) –10 0 0 –10 Aug 07, 2006 page 3 of 6 –10 Drain-Source On-State Resistance rDS(ON) (mΩ) Drain-Source On-State Voltage VDS(ON) (V) 0 Tc = 25°C Pulse Test 100 80 60 VGS = –4V 40 –10V 20 Tc = 25°C Pulse Test 0 –100 –2 –3 –5 –7–101 –2 –3 Drain Current ID (A) –5 –7–102 FX50KMJ-2 Forward Transfer Admittance vs. Drain Current (Typical) Drain Current ID (A) –100 –80 –60 –40 Tc = 25°C VDS = –10V Pulse Test –20 0 0 –2 –4 –6 –8 –10 Forward Transfer Admittance | yfs | (S) Transfer Characteristics (Typical) 102 TC = 25°C 75°C 125°C 7 5 3 2 VDS = –10V Pulse Test 101 7 5 3 2 100 0 –10 –2 –3 –5 –7–101 –5 –7–102 –2 –3 Gate-Source Voltage VGS (V) Drain Current ID (A) Capacitance vs. Drain-Source Voltage (Typical) Switching Characteristics (Typical) 2 2 104 103 7 5 7 5 Switching Time (ns) Capacitance C (pF) Ciss Tch = 25°C f = 1MHz VGS = 0V 3 2 103 Coss 7 5 Crss 3 2 102 tr 7 5 td(on) –2 –3 –5 –7 –101 –2 –3 –5 –7 Drain-Source Voltage VDS (V) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) Source-Drain Diode Forward Characteristics (Typical) –100 –8 VDS = –20V –6 –40V –4 –80V Tch = 25°C ID = –50A –2 0 40 80 120 160 Gate Charge Qg (nC) Aug 07, 2006 page 4 of 6 200 Source Current IS (A) Gate-Source Voltage VGS (V) Tch = 25°C VGS = –10V VDD = –50V RGEN = RGS = 50Ω 2 2 –7 –100 –10 Rev.2.00 tf 3 3 –3 –5 –7–100 –2 –3 –5 –7–101 –2 –3 –5 –7–102 –2 –3 0 td(off) –80 TC = 25°C –60 75°C 125°C –40 –20 0 VGS = 0V Pulse Test 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source-Drain Voltage VSD (V) Gate-Source Threshold Voltage VGS(th) (V) 101 VGS = –10V ID = –25A Pulse Test 7 5 3 2 100 7 5 3 2 10–1 –50 0 50 100 150 –4.0 VDS = –10V ID = –1mA –3.2 –2.4 –1.6 –0.8 0 –50 0 50 100 150 Channel Temperature Tch (°C) Breakdown Voltage vs. Channel Temperature (Typical) Transient Thermal Impedance Characteristics 1.4 VGS = 0V ID = –1mA 1.2 1.0 0.8 0.6 0.4 Threshold Voltage vs. Channel Temperature (Typical) Channel Temperature Tch (°C) –50 0 50 100 150 Transient Thermal Impedance Zth(ch–c) (°C/W) Drain-Source On-State Resistance rDS(ON) (25°C) On-State Resistance vs. Channel Temperature (Typical) Drain-Source Breakdown Voltage V(BR)DSS (25°C) Drain-Source Breakdown Voltage V(BR)DSS (t°C) Drain-Source On-State Resistance rDS(ON) (t°C) FX50KMJ-2 101 7 5 D = 1.0 3 2 0.5 100 0.2 7 5 0.1 3 2 0.05 PDM 10–1 tw 0.02 0.01 Single Pulse 7 5 3 2 T D= tw T 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Channel Temperature Tch (°C) Pulse Width tw (s) Switching Time Measurement Circuit Switching Waveform Vin Vout Monitor Vin Monitor 10% D.U.T. RGEN 90% RL 90% 90% VDD RGS Vout td(on) Rev.2.00 Aug 07, 2006 page 5 of 6 10% 10% tr td(off) tf FX50KMJ-2 Package Dimensions Package Name TO-220FN JEITA Package Code RENESAS Code PRSS0003AB-A Previous Code MASS[Typ.] 2.0g 2.8 ± 0.2 6.5 ± 0.3 3 ± 0.3 φ3.2 ± 0.2 3.6 ± 0.3 15 ± 0.3 10 ± 0.3 14 ± 0.5 Unit: mm 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 2.54 ± 0.25 Order Code Lead form Standard packing Quantity Standard order code Straight type Plastic Magazine (Tube) 50 Type name Lead form Plastic Magazine (Tube) 50 Type name – Lead forming code Note: Please confirm the specification about the shipping in detail. Rev.2.00 Aug 07, 2006 page 6 of 6 Standard order code example FX50KMJ-2 FX50KMJ-2-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. 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