Powerex Power CM800DU-12H Dual igbtmod 800 amperes/600 volt Datasheet

CM800DU-12H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBTMOD™
U-Series Module
800 Amperes/600 Volts
A
"R" (4 PLACES)
E
F
G
G2
H
K
E1
C1
E
E2
B
C2E1
E2
J
M
J
G1
L
"T" (4 PLACES)
N
P
"S" (3 PLACES)
Q
D
C
Features:
□ Low Drive Power
□ Low VCE(sat)
□ Discrete Super-Fast Recovery
Free-Wheel Diode
□ Isolated Baseplate for Easy
Heat Sinking
G2
E2
C2E1
E2
C1
E1
G1
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A
5.12
130.0
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Dimensions
Inches
K
1.57
Millimeters
40.0
B
5.12
130.0
L
1.42
36.0
C
1.38
35.0
M
1.72
43.8
D
0.96
24.5
N
0.54
13.8
E
4.33
110.0
P
0.45
11.5
F
0.39
10.0
Q
5.51
140.0
G
0.39
10.0
R
0.26 Dia.
6.5 Dia.
H
0.81
20.5
S
M8
M8
J
0.53
14.5
T
M4
M4
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM800DU-12H is a
600V (VCES), 800 Ampere Dual
IGBTMOD™ Power Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM
800
12
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM800DU-12H
Dual IGBTMOD™ U-Series Module
800 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Symbol
CM800DU-12H
Units
Tj
-40 to 150
°C
Tstg
-40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
600
Volts
Gate-Emitter Voltage (C-E SHORT)
VGES
±20
Volts
IC
800
Amperes
ICM
1600*
Amperes
IE
800
Amperes
Peak Emitter Current**
IEM
1600*
Amperes
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C)
Pc
1500
Watts
Storage Temperature
Collector Current (Tc = 25°C)
Peak Collector Current
Emitter Current** (Tc = 25°C)
Mounting Torque, M8 Main Terminal
–
95
in-lb
Mounting Torque, M6 Mounting
–
40
in-lb
G(E) Terminal, M4
–
15
in-lb
Weight
–
1200
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
2500
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
–
–
2
Gate Leakage Voltage
IGES
VGE = VGES, VCE = 0V
–
–
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 80mA, VCE = 10V
4.5
6
7.5
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
Total Gate Charge
QG
Units
mA
IC = 800A, VGE = 15V, Tj = 25°C
–
2.55
3.15
Volts
IC = 800A, VGE = 15V, Tj = 125°C
–
2.75
–
Volts
VCC = 300V, IC = 800A, VGE = 15V
–
1600
–
nC
–
–
Min.
Typ.
Max.
Units
–
–
70.4
nf
VCE = 10V, VGE = 0V
–
–
38.4
nf
–
–
10.4
nf
VCC = 300V, IC = 800A,
–
–
400
ns
Emitter-Collector Voltage**
VEC
IE = 800A, VGE = 0V
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2.6
Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Resistive
Turn-on Delay Time
td(on)
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Test Conditions
tr
VGE1 = VGE2 = 15V,
–
–
2000
ns
td(off)
RG = 3.1⍀, Resistive
–
–
500
ns
tf
Load Switching Operation
–
–
300
ns
trr
IE = 800A, diE/dt = -1600A/µs
–
–
Qrr
IE = 800A, diE/dt = -1600A/µs
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
–
1.92
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
160
–
ns
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
2
Symbol
Test Conditions
Min.
Typ.
Thermal Resistance, Junction to Case
Rth(j-c)Q
Per IGBT 1/2 Module
–
–
0.083
Thermal Resistance, Junction to Case
Rth(j-c)R
Per FWDi 1/2 Module
–
–
0.13
°C/W
Rth(c-f)
Per Module, Thermal Grease Applied
–
0.010
–
°C/W
Contact Thermal Resistance
Max.
Units
°C/W
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM800DU-12H
Dual IGBTMOD™ U-Series Module
800 Amperes/600 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
1600
14
13
15
VGE = 20V
1200
5
VCE = 10V
Tj = 25°C
Tj = 125°C
1200
20
12
11
800
10
400
9
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
Tj = 25oC
COLLECTOR CURRENT, IC, (AMPERES)
1600
800
400
8
0
0
0
2
4
6
8
3
2
1
4
8
12
16
0
20
400
800
1200
1600
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
104
102
Tj = 25°C
8
IC = 1600A
IC = 800A
6
4
2
CAPACITANCE, Cies, Coes, Cres, (nF)
Tj = 25°C
EMITTER CURRENT, IE, (AMPERES)
103
102
Cies
101
Coes
100
Cres
VGE = 0V
f = 1MHz
IC = 320A
10-1
10-1
101
0
0
4
8
12
16
.5
20
1.5
2.0
2.5
3.0
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
td(off)
tf
td(on)
102
VCC = 300V
VGE = ±15V
RG = 0.78 Ω
Tj = 125°C
tr
102
COLLECTOR CURRENT, IC, (AMPERES)
103
REVERSE RECOVERY TIME, trr, (ns)
103
101
101
1.0
di/dt = -1600A/µsec
Tj = 25°C
Irr
102
101
101
102
EMITTER CURRENT, IE, (AMPERES)
101
102
GATE CHARGE, VGE
102
trr
100
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
101
100
103
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
4
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
10
SWITCHING TIME, (ns)
VGE = 15V
Tj = 25°C
Tj = 125°C
0
0
10
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
IC = 400A
16
VCC = 200V
VCC = 300V
12
8
4
0
0
500
1000
1500
2000
2500
GATE CHARGE, QG, (nC)
3
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10-3
101
100
10-2
10-1
100
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
4
101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.06°C/W
10-4
10-3
10-3
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
Zth = Rth • (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
Zth = Rth • (NORMALIZED VALUE)
CM800DU-12H
Dual IGBTMOD™ U-Series Module
800 Amperes/600 Volts
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10-3
101
100
10-2
10-1
100
101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.09 °C/W
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
10-4
10-3
10-3
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