CM800DU-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ U-Series Module 800 Amperes/600 Volts A "R" (4 PLACES) E F G G2 H K E1 C1 E E2 B C2E1 E2 J M J G1 L "T" (4 PLACES) N P "S" (3 PLACES) Q D C Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking G2 E2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 5.12 130.0 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Dimensions Inches K 1.57 Millimeters 40.0 B 5.12 130.0 L 1.42 36.0 C 1.38 35.0 M 1.72 43.8 D 0.96 24.5 N 0.54 13.8 E 4.33 110.0 P 0.45 11.5 F 0.39 10.0 Q 5.51 140.0 G 0.39 10.0 R 0.26 Dia. 6.5 Dia. H 0.81 20.5 S M8 M8 J 0.53 14.5 T M4 M4 Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM800DU-12H is a 600V (VCES), 800 Ampere Dual IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 800 12 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM800DU-12H Dual IGBTMOD™ U-Series Module 800 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Symbol CM800DU-12H Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 800 Amperes ICM 1600* Amperes IE 800 Amperes Peak Emitter Current** IEM 1600* Amperes Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 1500 Watts Storage Temperature Collector Current (Tc = 25°C) Peak Collector Current Emitter Current** (Tc = 25°C) Mounting Torque, M8 Main Terminal – 95 in-lb Mounting Torque, M6 Mounting – 40 in-lb G(E) Terminal, M4 – 15 in-lb Weight – 1200 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 2 Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 80mA, VCE = 10V 4.5 6 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) Total Gate Charge QG Units mA IC = 800A, VGE = 15V, Tj = 25°C – 2.55 3.15 Volts IC = 800A, VGE = 15V, Tj = 125°C – 2.75 – Volts VCC = 300V, IC = 800A, VGE = 15V – 1600 – nC – – Min. Typ. Max. Units – – 70.4 nf VCE = 10V, VGE = 0V – – 38.4 nf – – 10.4 nf VCC = 300V, IC = 800A, – – 400 ns Emitter-Collector Voltage** VEC IE = 800A, VGE = 0V **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2.6 Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time Switch Turn-off Delay Time Times Fall Time Test Conditions tr VGE1 = VGE2 = 15V, – – 2000 ns td(off) RG = 3.1⍀, Resistive – – 500 ns tf Load Switching Operation – – 300 ns trr IE = 800A, diE/dt = -1600A/µs – – Qrr IE = 800A, diE/dt = -1600A/µs **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). – 1.92 Diode Reverse Recovery Time** Diode Reverse Recovery Charge** 160 – ns µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics 2 Symbol Test Conditions Min. Typ. Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module – – 0.083 Thermal Resistance, Junction to Case Rth(j-c)R Per FWDi 1/2 Module – – 0.13 °C/W Rth(c-f) Per Module, Thermal Grease Applied – 0.010 – °C/W Contact Thermal Resistance Max. Units °C/W Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM800DU-12H Dual IGBTMOD™ U-Series Module 800 Amperes/600 Volts OUTPUT CHARACTERISTICS (TYPICAL) 1600 14 13 15 VGE = 20V 1200 5 VCE = 10V Tj = 25°C Tj = 125°C 1200 20 12 11 800 10 400 9 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) 1600 800 400 8 0 0 0 2 4 6 8 3 2 1 4 8 12 16 0 20 400 800 1200 1600 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 104 102 Tj = 25°C 8 IC = 1600A IC = 800A 6 4 2 CAPACITANCE, Cies, Coes, Cres, (nF) Tj = 25°C EMITTER CURRENT, IE, (AMPERES) 103 102 Cies 101 Coes 100 Cres VGE = 0V f = 1MHz IC = 320A 10-1 10-1 101 0 0 4 8 12 16 .5 20 1.5 2.0 2.5 3.0 GATE-EMITTER VOLTAGE, VGE, (VOLTS) EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 td(off) tf td(on) 102 VCC = 300V VGE = ±15V RG = 0.78 Ω Tj = 125°C tr 102 COLLECTOR CURRENT, IC, (AMPERES) 103 REVERSE RECOVERY TIME, trr, (ns) 103 101 101 1.0 di/dt = -1600A/µsec Tj = 25°C Irr 102 101 101 102 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE 102 trr 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 101 100 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 4 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 10 SWITCHING TIME, (ns) VGE = 15V Tj = 25°C Tj = 125°C 0 0 10 REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) IC = 400A 16 VCC = 200V VCC = 300V 12 8 4 0 0 500 1000 1500 2000 2500 GATE CHARGE, QG, (nC) 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 101 100 10-2 10-1 100 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 4 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.06°C/W 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) CM800DU-12H Dual IGBTMOD™ U-Series Module 800 Amperes/600 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.09 °C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3