MIC5014/5015 Micrel MIC5014/5015 Low-Cost High- or Low-Side MOSFET Driver General Description Features MIC5014 and MIC5015 MOSFET drivers are designed for gate control of N-channel, enhancement-mode, power MOSFETs used as high-side or low-side switches. The MIC5014/5 can sustain an on-state output indefinitely. • • • • • • • • • • • • • • The MIC5014/5 operates from a 2.75V to 30V supply. In highside configurations, the driver can control MOSFETs that switch loads of up to 30V. In low-side configurations, with separate supplies, the maximum switched voltage is limited only by the MOSFET. The MIC5014/5 has a TTL compatible control input. The MIC5014 is noninverting while the MIC5015 is inverting. The MIC5014/5 features an internal charge pump that can sustain a gate voltage greater than the available supply voltage. The driver is capable of turning on a logic-level MOSFET from a 2.75V supply or a standard MOSFET from a 5V supply. The gate-to-source output voltage is internally limited to approximately 15V. The MIC5014/5 is protected against automotive load dump, reversed battery, and inductive load spikes of –20V. The driver’s overvoltage shutdown feature turns off the external MOSFET at approximately 35V to protect the load against power supply excursions. The MIC5014 is an improved pin-for-pin compatible replacement in many MIC5011 applications. The MIC5014/5 is available in plastic 8-pin DIP and 8-pin SOIC pacakges. Typical Application 2.75V to 30V operation 100µA maximum supply current (5V supply) 15µA typical off-state current Internal charge pump TTL compatible input Withstands 60V transient (load dump) Reverse battery protected to –20V Inductive spike protected to –20V Overvoltage shutdown at 35V Internal 15V gate protection Minimum external parts Operates in high-side or low-side configurations 1µA control input pull-off Inverting and noninverting versions Applications • • • • • • Automotive electrical load control Battery-powered computer power management Lamp control Heater control Motor control Power bus switching Ordering Information Part Number Noninverting MIC5014BM –40°C to +85°C 8-pin SOIC MIC5014BN –40°C to +85°C 8-pin Plastic DIP MIC5015BM –40°C to +85°C 8-pin SOIC MIC5015BN –40°C to +85°C 8-pin Plastic DIP 10µF MIC5014 Control Input ON OFF 2 3 V+ NC Input NC Source NC 8 7 6 Gate 5 IRLZ24 Load 4 Gnd Figure 1. 3V “Sleep-Mode” Switch with a Logic-Level MOSFET 1997 Package Inverting +3V to +4V 1 Temperature Range 5-137 5 MIC5014/5015 Micrel Block Diagram V+ (1) Charge Pump Gate (5) 15V Source (3) Input (2) * * Only on the inverting version Ground (4) Pin Description Pin Number Pin Name 1 V+ 2 Input 3 Source 4 Ground 5 Gate 6, 7, 8 NC Pin Function Supply. Must be decoupled to isolate from large transients caused by the power MOSFET drain. 10µF is recommended close to pins 1 and 4. Turns on power MOSFET when taken above (or below) threshold (1.0V typical). Pin 2 requires ~ 1µA to switch. Connects to source lead of power MOSFET and is the return for the gate clamp zener. Pin 3 can safely swing to –20V when turning off inductive loads. Drives and clamps the gate of the power MOSFET. Not internally connected. 5-138 1997 MIC5014/5015 Micrel Absolute Maximum Ratings (Notes 1,2) Operating Ratings (Notes 1,2) Supply Voltage ............................................... –20V to 60V Input Voltage .....................................................–20V to V+ Source Voltage.................................................. –20V to V+ Source Current .......................................................... 50mA Gate Voltage .................................................. –20V to 50V Junction Temperature .............................................. 150°C θJA (Plastic DIP) ..................................................... 160°C/W θJA (SOIC) ............................................................. 170°C/W Ambient Temperature: B version ................ –40°C to +85°C Ambient Temperature: A version .............. +55°C to +125°C Storage Temperature ................................ –65°C to +150°C Lead Temperature ...................................................... 260°C (max soldering time: 10 seconds) Supply Voltage (V+) ......................................... 2.75V to 30V Electrical Characteristics (Note 3) TA = –55°C to +125°C Parameter Supply Current 3.0V ≤ V+ ≤ 30V unless otherwise specified Conditions Min Typ VIN De-Asserted (Note 5) 10 VIN Asserted (Note 5) 5.0 VIN De-Asserted 10 VIN Asserted 60 VIN De-Asserted 10 VIN Asserted 25 Digital Low Level Digital High Level 2.0 VIN Low –2.0 0 VIN High 1.0 VIN Low –2.0 –1.0 VIN High –1.0 5.0 VIN Asserted 4.0 8.0V ≤ V+ ≤ 30V VIN Asserted V+ = 4.5V CL = 1000pF V+ = 12V CL = 1000pF V+ = 4.5V CL = 1000pF V+ = 12V CL = 1000pF VIN switched on, measure time for VGATE to reach V+ + 4V As above, measure time for VGATE to reach V+ + 4V VIN switched off, measure time for VGATE to reach 1V As above, measure time for VGATE to reach 1V V+ = 30V V+ = 5V V+ = 3V Logic Input Voltage Threshold VIN Logic Input Current MIC5014 (non-inverting) Logic Input Current MIC5015 (inverting) Input Capacitance Gate Enhancement VGATE – VSUPPLY Zener Clamp VGATE – VSOURCE Gate Turn-on Time, tON (Note 4) Gate Turn-off Time, tOFF (Note 4) 3.0V ≤ V+ ≤ 30V TA = 25°C 3.0V ≤ V+ ≤ 30V 3.0V ≤ V+ ≤ 30V Overvoltage Shutdown Threshold 13 35 Max 25 10 25 100 25 35 0.8 2.0 2.0 Units µA mA µA µA V µA µA 17 pF V 15 17 V 2.5 8.0 ms 90 140 µs 6.0 30 µs 6.0 30 µs 37 41 V Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when operating the device beyond its specified Operating Ratings. Note 2: The MIC5014/5015 is ESD sensitive. Note 3: Minimum and maximum Electrical Characteristics are 100% tested at TA = 25°C and TA = 85°C, and 100% guaranteed over the entire operating temperature range. Typicals are characterized at 25°C and represent the most likely parametric norm. Note 4: Test conditions reflect worst case high-side driver performance. Low-side and bootstrapped topologies are significantly faster—see Applications Information. Maximum value of switching time seen at 125°C, unit operated at room temperature will reflect the typical value shown. Note 5: “Asserted” refers to a logic high on the MIC5014 and a logic low on the MIC5015. 1997 5-139 5 MIC5014/5015 Micrel Typical Characteristics All data measured using FET probe to minimize resistive loading 4 3 2 1 0 5 10 15 20 25 SUPPLY VOLTAGE (V) 15 10 5 Gate Enhancement = VGATE – VSUPPLY 0 30 0 0.1 4 8 12 16 20 24 SUPPLY VOLTAGE (V) 1 0.1 0.01 28 50 0 4 8 12 16 20 24 SUPPLY VOLTAGE (V) 1 0.1 5 10 15 20 25 SUPPLY VOLTAGE (V) 140 120 100 80 40 20 0 -60 -30 0 30 60 90 120 150 AMBIENT TEMPERATURE (°C) 28 High-Side Turn-Off Time Until Gate = 1V CGATE = 3000pF 1 0.1 Charge-Pump Output Current 0 5 10 15 20 25 SUPPLY VOLTAGE (V) 3V Source connected to supply: supply voltage as noted 0 5 10 15 GATE-TO-SOURCE VOLTAGE (V) 2 CGATE = 1300pF 0 5 10 15 20 25 SUPPLY VOLTAGE (V) 30 Low-Side Turn-On Time Until Gate = 4V 10000 12V 1000 100 10 1 Source connected to ground: supply voltage as noted 5V 3V 0 5 10 15 GATE-TO-SOURCE VOLTAGE (V) 5-140 TURN-ON TIME (µs) 10 5V CGATE = 3000pF 4 28V OUTPUT CURRENT (µA) 12V 6 0 30 10000 100 8 Charge-Pump Output Current 1000 28V Supply = 12V CGATE = 1000pF 60 10 10 0.01 30 2 4 6 8 10 GATE CAPACITANCE (nF) 160 TURN-OFF TIME (µs) TURN-ON TIME (ms) CGATE = 1300pF 0 0 180 100 10 Supply = 12V High-Side Turn-On Time Until Gate = Supply + 10V 100 TURN-ON TIME (ms) 100 High-Side Turn-On Time vs. Temperature CGATE = 3000pF 10 High-Side Turn-On Time Until Gate = Supply + 10V OUTPUT CURRENT (µA) 150 30 HIGH-SIDE TURN-ON TIME (µs) TURN-ON TIME (ms) TURN-ON TIME (ms) CGATE = 1300pF 1 1 5 10 15 20 25 SUPPLY VOLTAGE (V) 100 0 200 High-Side Turn-On Time Until Gate = Supply + 4V 100 10 250 0 High-Side Turn-On Time Until Gate = Supply + 4V 0.01 TURN-ON TIME (µs) 5 0.01 300 20 GATE ENHANCEMENT (V) SUPPLY CURRENT (mA) 6 0 High-Side Turn-On Time vs. Gate Capacitance Gate Enhancement vs. Supply Voltage Supply Current (Output Asserted) CGATE = 3000pF 1000 100 CGATE = 1300pF 10 1 0 5 10 15 20 25 SUPPLY VOLTAGE (V) 30 1997 MIC5014/5015 Micrel Functional Description The MIC5014 is functionally and pin for pin compatible with the MIC5011, except for the omission of the optional speedup capacitor pins, which are available on the MIC5011. The MIC5015 is an inverting configuration of the MIC5014. The internal functions of these devices are controlled via a logic block (refer to block diagram) connected to the control input (pin 2). When the input is off (low for the MIC5014, and high for the MIC5015), all functions are turned off, and the gate of the external power MOSFET is held low via two Nchannel switches. This results in a very low standby current; 15µA typical, which is necessary to power an internal bandgap. When the input is driven to the “ON” state, the N-channel switches are turned off, the charge pump is turned on, and the P-channel switch between the charge pump and the gate turns on, allowing the gate of the power FET to be charged. The op amp and internal zener form an active regulator which shuts off the charge pump when the gate voltage is high enough. This is a feature not found on the MIC5011. The charge pump incorporates a 100kHz oscillator and onchip pump capacitors capable of charging a 1,000pF load in 90µs typical. In addition to providing active regulation, the internal 15V zener is included to prevent exceeding the VGS rating of the power MOSFET at high supply voltages. The MIC5014/15 devices have been improved for greater ruggedness and durability. All pins can withstand being pulled 20V below ground without sustaining damage, and the supply pin can withstand an overvoltage transient of 60V for 1s. An overvoltage shutdown has also been included, which turns off the device when the supply exceeds 35V. Construction Hints High current pulse circuits demand equipment and assembly techniques that are more stringent than normal, low current lab practices. The following are the sources of pitfalls most often encountered during prototyping: Supplies : Many bench power supplies have poor transient response. Circuits that are being pulse tested, or those that operate by pulse-width modulation will produce strange results when used with a supply that has poor ripple rejection, or a peaked transient response. Always monitor the power supply voltage that appears at the drain of a high side driver (or the supply side of the load for a low side driver) with an oscilloscope. It is not uncommon to find bench power supplies in the 1kW class that overshoot or undershoot by as much as 50% when pulse loaded. Not only will the load current and voltage measurements be affected, but it is possible to overstress various components, especially electrolytic capacitors, with possibly catastrophic results. A 10µF supply bypass capacitor at the chip is recommended. Residual resistances: Resistances in circuit connections may also cause confusing results. For example, a circuit may employ a 50mΩ power MOSFET for low voltage drop, but unless careful construction techniques are used, one could easily add 50 to 100mΩ resistance. Do not use a socket for the MOSFET. If the MOSFET is a TO-220 type package, make high current connections to the drain tab. Wiring losses have a profound effect on high-current circuits. A floating milliohmeter can identify connections that are contributing excess drop under load. Low Voltage Testing As the MIC5014/MIC5015 have relatively high output impedances, a normal oscilloscope probe will load the device. This is especially pronounced at low voltage operation. It is recommended that a FET probe or unity gain buffer be used for all testing. Circuit Topologies The MIC5014 and MIC5015 are well suited for use with standard power MOSFETs in both low and high side driver configurations. In addition, the lowered supply voltage requirements of these devices make them ideal for use with logic level FETs in high side applications with a supply voltage of 3 to 4V. (If higher supply voltages [>4V] are used with logic level FETs, an external zener clamp must be supplied to ensure that the maximum VGS rating of the logic FET [10V] is not exceeded.) In addition, a standard IGBT can be driven using these devices. Choice of one topology over another is usually based on speed vs. safety. The fastest topology is the low side driver, however, it is not usually considered as safe as high side driving as it is easier to accidentally short a load to ground than to VCC. The slowest, but safest topology is the high side driver; with speed being inversely proportional to supply voltage. It is the preferred topology for most military and automotive applications. Speed can be improved considerably by bootstrapping from the supply. All topologies implemented using these devices are well suited to driving inductive loads, as either the gate or the source pin can be pulled 20V below ground with no effect. External clamp diodes are unnecessary, except for the case in which a transient may exceed the overvoltage trip point. High Side Driver (Figure 1) The high side topology shown here is an implementation of a “sleep-mode” switch for a laptop or notebook computer which uses a logic level FET. A standard power FET can easily be substituted when supply voltages above 4V are required. +3V to +30V 10µF MIC5014 1 Control Input ON OFF V+ NC Input NC Source 4 Gnd NC 2 3 8 7 Load Applications Information 6 Gate 5 Figure 2. Low Side Driver 1997 5-141 5 MIC5014/5015 Micrel Low Side Driver (Figure 2) A key advantage of this topology, as previously mentioned, is speed. The MOSFET gate is driven to near supply immediately when the MIC5014/15 is turned on. Typical circuits reach full enhancement in 50µs or less with a 15V supply. Bootstrapped High Side Driver (Figure 3) The turn-on time of a high side driver can be improved to faster than 40µs by bootstrapping the supply with the MOSFET source. The Schottky barrier diode prevents the supply pin from dropping more than 200mV below the drain supply and improves turnon time. Since the supply current in the “off” state is only a small leakage, the 100nF bypass capacitor tends to remain charged for several seconds after the MIC5014/15 is turned off. Faster speeds can be obtained at the expense of supply voltage (the overvoltage shutdown will turn the part off when the bootstrapping action pulls the supply pin above 35V) by using a larger capacitor at the junction of the two 1N4001 diodes. In a PWM application (this circuit can be used for either PWM’ed or continuously energized loads), the chip supply is sustained at a higher potential than the system supply, which improves switching time. the short is removed, feedback to the input pin insures that the MIC5014 will turn back on. This output can also be level shifted and sent to an I/O port of a microcontroller for intelligent control. Current Shunts (RS). Low valued resistors are necessary for use at RS. Resistors are available with values ranging from 1 to 50mΩ, at 2 to 10W. If a precise overcurrent trip point is not necessary, then a nonprecision resistor or even a measured PCB trace can serve as RS. The major cause of drift in resistor values with such resistors is temperature coefficient; the designer should be aware that a linear, 500 ppm/°C change will contribute as much as 10% shift in the overcurrent trip point. If this is not acceptable, a power resistor designed for current shunt service (drifts less than 100 ppm/°C), or a Kelvin-sensed resistor may be used.† 12V On ITRIP = VTRIP/RS = 1.7A VTRIP = R1/(R1+R2) 10µF +2.75V to +30V MIC5014 1 1N5817 2 1N4001 (2) 3 V+ NC Input NC Source NC 4 Gnd 100nF 8 RS 0.06Ω R1 1kΩ 7 R4 6 1kΩ Gate 5 1µF MIC5015 Control Input ON OFF 2 3 V+ NC Input NC Source NC 4 Gnd 8 Load 1 7 LM301A R2 120kΩ 2.2kΩ 6 Gate 5 1RF540 Load Figure 4. High Side Driver with Overcurrent Shutdown Figure 3. Bootstrapped Hgh-Side Driver High Side Driver With Current Sense (Figure 4) Although no current sense function is included on the MIC5014/15 devices, a simple current sense function can be realized via the addition of one more active component; an LM301A op amp used as a comparator. The positive rail of the op amp is tied to V+, and the negative rail is tied to ground. This op amp was chosen as it can withstand having input transients that swing below the negative rail, and has common mode range almost to the positive rail. The inverting side of this comparator is tied to a voltage divider which sets the voltage to V+ – VTRIP . The non inverting side is tied to the node between the drain of the FET and the sense resistor. If the overcurrent trip point is not exceeded , this node will always be pulled above V+ – VTRIP, and the output of the comparator will be high which feeds the control input of the MIC5014 (polarities should be reversed if the MIC5015 is used). One the overcurrent trip point has been reached, the comparator will go low, which shuts off the MIC5014. When the † Suppliers of Precision Power Resistors: Dale Electronics, Inc., 2064 12th Ave., Columbus, NE 68601. (402) 5653131 International Resistive Co., P.O. Box 1860, Boone,NC 28607-1860. (704) 264-8861 Isotek Corp., 566 Wilbur Ave. Swansea, MA 02777. (508) 673-2900 Kelvin, 14724 Ventura Blvd., Ste. 1003, Sherman Oaks, CA 91403-3501. (818) 990-1192 RCD Components, Inc., 520 E. Industrial Pk. Dr., Manchester, NH 03103. (603) 669-0054 Ultronix, Inc., P.O. Box 1090, Grand Junction, CO 81502 (303) 242-0810 High Side Driver With Delayed Current Sense (Figure 5) Delay of the overcurrent detection to accomodate high inrush loads such as incandescent or halogen lamps can be accomplished by adding an LM3905 timer as a one shot to provide an open collector pulldown for the comparator output such that the control input of the MIC5015 stays low for a preset amount of time without interference from the current sense circuitry. Note that an MIC5015 must be used in this application (figure 5), as an inverting control input is necessary. The delay time is set by the RC time constant of the external components on pins 3 and 4 of the timer; in this case, 6ms was chosen. An LM3905 timer was used instead of a 555 as it provides a clean transition, and is almost impossible to make oscillate. Good bypassing and noise immunity is essential in this circuit to prevent spurious op amp oscillations. 5-142 1997 MIC5014/5015 Micrel 12V 12V LM3905N 1 2 On 3 Trigger Logic VREF Emit R/C Coll 4 Gnd 10µF MIC5014 1 2 3 V+ NC Input NC Source NC 7 6 V+ 5 1000pF 0.01µF 1kΩ Gate 5 1kΩ 7 R1 1kΩ R4 6 R2 LM301A 120kΩ Load 4 Gnd RS 0.06Ω 8 8 2.2kΩ Figure 5. High Side Driver with Delayed Overcurrent Shutdown Typical Applications Variable Supply Low Side Driver for Motor Speed Control (Figure 6) The internal regulation in the MIC5014/15 allows a steady gate enhancement to be supplied while the MIC5014/15 supply varies from 5V to 30V, without damaging the internal gate to source zener clamp. This allows the speed of the DC motor shown to be varied by varying the supply voltage. VCC = +5V to +30V MIC5014 1 ON OFF 2 3 V+ NC Input NC Source NC 4 Gnd 8 7 M applications, it is acceptable to allow this voltage to momentarily turn the MOSFET back on as a way of dissipating the inductor’s current. However, if this occurs when driving a solenoid valve with a fast switching speed, chemicals or gases may be inadvertantly be dispensed at the wrong time with possibly disasterous consequences. Also, too large of a kickback voltage (as is found in larger solenoids) can damage the MIC5014 or the power FET by forcing the Source node below ground (the MIC5014 can be driven up to 20V below ground before this happens). A catch diode has been included in this design to provide an alternate route for the inductive kickback current to flow. The 5kΩ resistor in series with this diode has been included to set the recovery time of the solenoid valve. 24V 6 Gate 5 IRF540 MIC5015 1 OFF ON 2 3 V+ NC Input NC Source NC 4 Gnd 8 7 6 Gate 5 Figure 6: DC Motor Speed Control/Driver Solenoid Valve Driver (Figure 7) High power solenoid valves are used in many industrial applications requiring the timed dispensing of chemicals or gases. When the solenoid is activated, the valve opens (or closes), releasing (or stopping) fluid flow. A solenoid valve, like all inductive loads, has a considerable “kickback” voltage when turned off, as current cannot change instantaneously through an inductor. In most 1997 5-143 ASCO 8320A Solenoid IRFZ40 1N4005 5kΩ Figure 7: Solenoid Valve Driver 5 MIC5014/5015 Micrel Incandescent/Halogen Lamp Driver (Figure 8) The combination of an MIC5014/5015 and a power FET makes an effective driver for a standard incandescent or halogen lamp load. Such loads often have high inrush currents, as the resistance of a cold filament is less than one-tenth as much as when it is hot. Power MOSFETs are well suited to this application as they have wider safe operating areas than do power bipolar transistors. It is important to check the SOA curve on the data sheet of the power FET to be used against the estimated or measured inrush current of the lamp in question prior to prototyping to prevent “explosive” results. Motor Driver With Stall Shutdown (Figure 10) Tachometer feedback can be used to shut down a motor driver circuit when a stall condition occurs. The control switch is a 3-way type; the “START” position is momentary and forces the driver ON. When released, the switch returns to the “RUN” position, and the tachometer’s output is used to hold the MIC5014 input ON. If the motor slows down, the tach output is reduced, and the MIC5014 switches OFF. Resistor “R” sets the shutdown threshold. 12V If overcurrent sense is to be used, first measure the duration of the inrush, then use the topology of Figure 5 with the RC of the timer chosen to accomodate the duration with suitable guardbanding. 10µF MIC5014 1 2 12V 330kΩ 3 V+ NC Input NC Source NC R 330kΩ MIC5014 1 Control Input 2 ON OFF 3 V+ NC Input NC Source NC 4 Gnd 8 7 6 Gate 5 4 Gnd 10µF 8 IRFZ44 7 1N4148 6 T Gate 5 M IRF540 Figure 10. Motor Stall Shutdowm OSRAM HLX64623 Figure 8. Halogen Lamp Driver Relay Driver (Figure 9) Some power relay applications require the use of a separate switch or drive control, such as in the case of microprocessor control of banks of relays where a logic level control signal is used, or for drive of relays with high power requirements. The combination of an MIC5014/ 5015 and a power FET also provides an elegant solution to power relay drive. Simple DC-DC Converter (Figure 11) The simplest application for the MIC5014 is as a basic one-chip DC-DC converter. As the output (Gate) pin has a relatively high impedance, the output voltage shown will vary significantly with applied load. 5V 10µF MIC5014 1 12V 2 3 10µF Control Input ON OFF 2 3 V+ NC Input NC Source NC 4 Gnd NC Input NC Source NC 4 Gnd MIC5014 1 V+ 8 8 7 6 Gate 5 VOUT = 12V 7 6 Gate 5 IRF540 Figure 11. DC - DC Converter Guardian Electric 1725-1C-12D Figure 9: Relay Driver 5-144 1997 MIC5014/5015 Micrel The addition of a Schottky diode between the supply and the FET eliminates this problem. The MBR2035CT was chosen as it can withstand 20A continuous and 150A peak, and should survive the rigors of an automotive environment. The two diodes are paralleled to reduce switch loss (forward voltage drop). High Side Driver With Load Protection (Figure 12) Although the MIC5014/15 devices are reverse battery protected, the load and power FET are not, in a typical high side configuration. In the event of a reverse battery condition, the internal body diode of the power FET will be forward biased. This allows the reversed supply access to the load. 12V 10µF MBR2035CT MIC5014 1 Control Input ON OFF 2 3 V+ NC Input NC Source NC 7 6 Gate 5 IRF540 Load 4 Gnd 8 Figure 12: High Side Driver WIth Load Protection 5 Push-Pull Driver With No Cross-Conduction (Figure 13) As the turn-off time of the MIC5014/15 devices is much faster than the turn-on time, a simple push-pull driver with no cross conduction can be made using one MIC5014 and one MIC5015. The same control signal is applied to both inputs; the MIC5014 turns on with the positive signal, and the MIC5015 turns on when it swings low. This scheme works with no additional components as the relative time difference between the rise and fall times of the MIC5014 is large. However, this does mean that there is considerable deadtime (time when neither driver is turned on). If this circuit is used to drive an inductive load, catch diodes must be used on each half to provide an alternate path for the kickback current that will flow during this deadtime. This circuit is also a simple half H-bridge which can be driven with a PWM signal on the input for SMPS or motor drive applications in which high switching frequencies are not desired. 12V 10µF MIC5014 1 2 3 V+ NC Input NC Source 4 Gnd NC 8 7 6 Gate 5 IRFZ40 Control Input 12V VOUT MIC5015 1 2 3 V+ NC Input NC Source 4 Gnd NC 8 7 6 Gate 5 IRFZ40 Figure 13: Push-Pull Driver 1997 5-145