Panasonic MA2C165 Silicon epitaxial planar type Datasheet

Switching Diodes
MA2C165, MA2C166, MA2C167
Silicon epitaxial planar type
Unit : mm
For switching circuits
φ 0.45 max.
• Short reverse recovery time trr
COLORED BAND
INDICATES
CATHODE
1
0.2 max.
• Small terminal capacitance, Ct
Symbol
Rating
Unit
VR
35
V
(DC)
MA2C166
50
MA2C167
75
Repetitive peak
reverse voltage
MA2C165
35
VRRM
MA2C166
50
MA2C167
75
V
13 min.
MA2C165
0.2 max.
Parameter
2.2 ± 0.3
■ Absolute Maximum Ratings Ta = 25°C
Reverse voltage
13 min.
■ Features
2
φ 1.75 max.
Average forward current
IF(AV)
100
mA
Repetitive peak forward current
IFRM
225
mA
Non-repetitive peak forward
surge current*
IFSM
500
mA
Junction temperature
Tj
200
°C
Storage temperature
Tstg
−55 to +200
°C
1 : Cathode
2 : Anode
JEDEC : DO-34
Note) * : t = 1 s
■ Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Symbol
MA2C165
IR
MA2C166
MA2C167
Conditions
Min
Max
Unit
VR = 15 V
0.025
µA
VR = 30 V
0.1
VR = 15 V
0.025
VR = 50 V
5
VR = 20 V
Typ
0.012
VR = 75 V
5
MA2C165
VR = 35 V, Ta = 150°C
100
MA2C166
VR = 50 V, Ta = 150°C
100
MA2C167
Forward voltage (DC)
Reverse voltage (DC)
0.025
MA2C165
Terminal capacitance
Reverse recovery time* MA2C165
VR = 75 V, Ta = 150°C
VF
IF = 100 mA
VR
IR = 5 µA
Ct
VR = 0 V, f = 1 MHz
trr
IF = 10 mA, VR = 1 V,
MA2C166/167
50
100
0.95
1.2
V
0.9
2
pF
10
ns
35
Irr = 0.1 · IR, RL = 100 Ω
Note) 1. Rated input/output frequency: 100 MHz (MA2C165), 250 MHz (MA2C167), 1 000 MHz (MA2C166)
V
2.2
4
2. * : trr measuring circuit
■ Cathode Indication
Type No.
Color
MA2C165 MA2C166
White
Green
MA2C167
Violet
1
MA2C165, MA2C166, MA2C167
Switching Diodes
IF  V F
103
Input Pulse
tp
tr
Output Pulse
t
10%
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
t
Irr = 0.1 · IR
IF = 10 mA
VR = 1 V
RL = 100 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
trr
IF
90%
VR
102
Forward current IF (mA)
Bias Application Unit N-50BU
trr measuring circuit
10
Ta = 150°C
1
75°C
25°C
− 20°C
10−1
10−2
0
0.2
0.4
0.6
0.8
1.0
1.2
Forward voltage VF (V)
IR  Ta
VR = 35 V
10−1
0.8
Forward voltage VF (V)
Reverse current IR (µA)
1
1
10−1
10−2
10−2
10−3
0
40
80
120
160
200
40
MA2C165
Reverse current IR (µA)
Reverse current IR (µA)
100°C
1
10−1
25°C
120
20
160
0
−40
200
0
40
30
200
f = 1 MHz
Ta = 25°C
Ta = 150°C
100°C
10−1
25°C
1.6
40
60
Reverse voltage VR (V)
80
MA2C165
1.2
MA2C166, MA2C167
0.8
0.4
0
20
160
Ct  VR
MA2C166
MA2C167
0
120
2.0
10−2
40
80
Ambient temperature Ta (°C)
1
10−3
10
Reverse voltage VR (V)
2
80
10
10
0
0.1 mA
IR  V R
102
Ta = 150°C
10−3
1 mA
Ambient temperature Ta (°C)
IR  VR
10−2
10 mA
0.4
0.01 mA
0
Ambient temperature Ta (°C)
102
IF = 20 mA
0.6
0.2
Terminal capacitance Ct (pF)
10−3
VR = 75 V
50 V
20 V
10
15 V
VF  Ta
1.0
MA2C166
MA2C167
MA2C165
10
Reverse current IR (µA)
IR  T a
102
102
0
4
8
12
16
Reverse voltage VR (V)
20
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