Freescale ATC100B0R3BT500XT Rf power field effect transistor Datasheet

Freescale Semiconductor
Technical Data
Document Number: MRF7S21170H
Rev. 5, 4/2008
RF Power Field Effect Transistors
MRF7S21170HR3
MRF7S21170HSR3
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2110 to
2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for PCN - PCS/cellular radio and WLL
applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ =
1400 mA, Pout = 50 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 31%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 170 Watts CW
Output Power
• Pout @ 1 dB Compression Point w 170 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2110 - 2170 MHz, 50 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF7S21170HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF7S21170HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 170 W CW
Case Temperature 73°C, 25 W CW
RθJC
0.31
0.36
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S21170HR3 MRF7S21170HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
B (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
500
nAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 372 μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1400 mAdc)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage (1)
(VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test)
VGG(Q)
4.5
5.4
6.5
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 3.72 Adc)
VDS(on)
0.1
0.15
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.9
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
703
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics (2)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg., f = 2112.5 MHz and
f = 2167.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
15
16
18
dB
Drain Efficiency
ηD
29
31
—
%
PAR
5.7
6.1
—
dB
ACPR
—
- 37
- 35
dBc
IRL
—
- 15
-9
dB
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF7S21170HR3 MRF7S21170HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 2110 - 2170 MHz Bandwidth
Video Bandwidth @ 170 W PEP Pout where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
MHz
—
25
—
Gain Flatness in 60 MHz Bandwidth @ Pout = 50 W Avg.
GF
—
0.4
—
dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 170 W CW
Φ
—
1.95
—
°
Delay
—
1.7
—
ns
Part - to - Part Insertion Phase Variation @ Pout = 170 W CW
f = 2140 MHz, Six Sigma Window
ΔΦ
—
18
—
°
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.015
—
dB/°C
ΔP1dB
—
0.01
—
dBm/°C
Average Group Delay @ Pout = 170 W CW, f = 2140 MHz
Output Power Variation over Temperature
( - 30°C to +85°C)
MRF7S21170HR3 MRF7S21170HSR3
RF Device Data
Freescale Semiconductor
3
Z17
R1
VBIAS
VSUPPLY
+
R2
C1
Z7
C2
C8
R3
RF
INPUT Z1
C10
C12
C13
Z9
C4
Z2
Z3
Z4
Z5
Z6
Z10
Z8
C3
Z11 Z12
Z13
Z14
Z15
C17
DUT
C5
C6
C14
C15
RF
Z16 OUTPUT
C18
C16
Z18
C7
Z1
Z2*
Z3*
Z4*
Z5*
Z6
Z7
Z8
Z9
Z10
0.250″ x 0.083″ Microstrip
0.090″ x 0.083″ Microstrip
0.842″ x 0.083″ Microstrip
0.379″ x 0.083″ Microstrip
0.307″ x 0.083″ Microstrip
0.156″ x 0.787″ Microstrip
1.160″ x 0.080″ Microstrip
0.119″ x 0.787″ Microstrip
0.077″ x 0.880″ Microstrip
0.459″ x 1.000″ Microstrip
Z11
Z12*
Z13*
Z14*
Z15*
Z16
Z17, Z18
PCB
C9
C11
0.060″ x 0.760″ Microstrip
0.129″ x 0.083″ Microstrip
0.436″ x 0.083″ Microstrip
0.490″ x 0.083″ Microstrip
0.275″ x 0.083″ Microstrip
0.230″ x 0.083″ Microstrip
0.900″ x 0.080″ Microstrip
Taconic TLX8 - 0300, 0.030″, εr =2.55
* Variable for tuning
Figure 1. MRF7S21170HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S21170HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
100 pF Chip Capacitor
ATC100B101JT500XT
ATC
C2, C3, C7, C8, C17, C18
6.8 pF Chip Capacitors
ATC100B6R8BT500XT
ATC
C4, C15
0.3 pF Chip Capacitors
ATC100B0R3BT500XT
ATC
C5
0.8 pF Chip Capacitor
ATC100B0R8BT500XT
ATC
C6
0.2 pF Chip Capacitor
ATC100B0R2BT500XT
ATC
C9, C10, C11, C12
10 μF Chip Capacitors
C5750X5R1H106MT
TDK
C13
470 μF, 63 V Electrolytic Capacitor, Radial
477KXM063M
Illinois Capacitor
C14
0.4 pF Chip Capacitor
ATC100B0R4BT500XT
ATC
C16
0.1 pF Chip Capacitor
ATC100B0R1BT500XT
ATC
R1, R2
10 kΩ, 1/4 W Chip Resistors
CRCW12061002FKEA
Vishay
R3
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
MRF7S21170HR3 MRF7S21170HSR3
4
RF Device Data
Freescale Semiconductor
C13
R2
R1
C1
C8
C2
C10 C12
R3
C17
C3
C5
C6
CUT OUT AREA
C4
C14
C15
C9
C16
C18
C11
C7
MRF7S21170H
Rev 0
Figure 2. MRF7S21170HR3(HSR3) Test Circuit Component Layout
MRF7S21170HR3 MRF7S21170HSR3
RF Device Data
Freescale Semiconductor
5
Gps
34
15
14
32
ηD
30
VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1400 mA
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
13
IRL
12
11
10
28
−5
0
−10
−1
PARC
9
2060
−2
2080
2100
2120
2140
2160
2180
−15
−20
−3
2220
2200
−25
IRL, INPUT RETURN LOSS (dB)
Gps, POWER GAIN (dB)
16
36
PARC (dB)
17
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
16
42
Gps, POWER GAIN (dB)
Gps
15
14
40
ηD
38
VDD = 28 Vdc, Pout = 84 W (Avg.), IDQ = 1400 mA
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 7.5 dB @ 0.01%
Probability (CCDF)
13
12
IRL
11
36
−5
−2
−10
−3
10
−4
−15
−20
PARC
9
2060
2080
2100
2120
2140
2160
2180
2200
−5
2220
−25
IRL, INPUT RETURN LOSS (dB)
44
PARC (dB)
17
ηD, DRAIN
EFFICIENCY (%)
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 50 Watts Avg.
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 84 Watts Avg.
18
−10
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IDQ = 2100 mA
Gps, POWER GAIN (dB)
17
1750 mA
16
1400 mA
15
1050 mA
700 mA
14
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
13
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
2100 mA
−30
IDQ = 700 mA
−40
1400 mA
−50
1750 mA
1050 mA
−60
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
400
1
10
100
400
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF7S21170HR3 MRF7S21170HSR3
6
RF Device Data
Freescale Semiconductor
−10
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, IDQ = 1400 mA
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
−30
−40
3rd Order
−50
5th Order
7th Order
−60
1
10
100
0
VDD = 28 Vdc, Pout = 170 W (PEP), IDQ = 1400 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
−10
−20
IM3−L
−30
IM3−U
−40
IM5−U
−50
IM7−U
IM5−L
IM7−L
−60
1
400
100
10
Pout, OUTPUT POWER (WATTS) PEP
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
OUTPUT COMPRESSION AT THE 0.01%
PROBABILITY ON THE CCDF (dB)
1
54
Ideal
0
48
−1
−2
42
−1 dB = 43.335 W
36
−2 dB = 61.884 W
−3
30
−3 dB = 83.111 W
Actual
−4
VDD = 28 Vdc, IDQ = 1400 mA
f = 2140 MHz, Input Signal PAR = 7.5 dB
−5
20
40
60
80
100
ηD, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
24
18
120
Pout, OUTPUT POWER (WATTS)
19
−30
Uncorrected, Upper and Lower
−40
60
−30_C
VDD = 28 Vdc, IDQ = 1400 mA, f = 2140 MHz Single−Carrier
W−CDMA, Input Signal PAR = 7.5 dB, ACPR @ ±5 MHz
Offset in 3.84 MHz Integrated Bandwidth
DPD Corrected
No Memory Correction
−50
−60
Gps
18
40
85_C
16
30
15
20
VDD = 28 Vdc
IDQ = 1400 mA
f = 2140 MHz
ηD
DPD Corrected, with Memory Correction
13
41
42
43
44
45
46
47
48
49
50
Pout, OUTPUT POWER (dBm)
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
50
85_C
25_C
17
14
−70
40
25_C
TC = −30_C
1
10
100
10
ηD, DRAIN EFFICIENCY (%)
−20
Gps, POWER GAIN (dB)
ACPR, UPPER AND LOWER RESULTS (dBc)
Figure 9. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
0
400
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
MRF7S21170HR3 MRF7S21170HSR3
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
108
17
16
MTTF (HOURS)
Gps, POWER GAIN (dB)
IDQ = 1400 mA
f = 2140 MHz
15
107
106
14
VDD = 24 V
28 V
32 V
105
13
0
100
200
280
90
110
Pout, OUTPUT POWER (WATTS) CW
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Power Gain versus Output Power
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 50 W Avg., and ηD = 31%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100
−10
3.84 MHz
Channel BW
−20
10
−40
Input Signal
−50
0.1
(dB)
PROBABILITY (%)
−30
1
−60
0.01
−70
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
0
2
4
6
−80
−ACPR in 3.84 MHz
Integrated BW
−90
8
10
−ACPR in 3.84 MHz
Integrated BW
−100
PEAK−TO−AVERAGE (dB)
Figure 14. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single - Carrier Test Signal
−110
−9
−7.2 −5.4 −3.6 −1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 15. Single - Carrier W - CDMA Spectrum
MRF7S21170HR3 MRF7S21170HSR3
8
RF Device Data
Freescale Semiconductor
Zo = 10 Ω
f = 2220 MHz
Zload
Zsource
f = 2060 MHz
f = 2220 MHz
f = 2060 MHz
VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg.
f
MHz
Zsource
W
Zload
W
2060
4.57 - j10.70
1.02 - j3.54
2080
4.57 - j10.38
0.99 - j3.34
2100
4.57 - j10.06
0.96 - j3.14
2120
4.52 - j9.72
0.93 - j2.94
2140
4.40 - j9.42
0.92 - j2.76
2160
4.15 - j9.12
0.91 - j2.59
2180
4.44 - j8.82
0.89 - j2.42
2200
4.19 - j8.53
0.88 - j2.25
2220
4.12 - j8.23
0.88 - j2.09
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRF7S21170HR3 MRF7S21170HSR3
RF Device Data
Freescale Semiconductor
9
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
62
61
Ideal
P6dB = 53.89 dBm (244 W)
61
59
58
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
60
P3dB = 53.56 dBm (226 W)
57
56
P1dB = 52.75 dBm
(188 W)
55
54
Actual
53
VDD = 28 Vdc, IDQ = 1400 m, Pulsed CW
12 μsec(on), 10% Duty Cycle, f = 2140 MHz
52
51
32
33
34
35
36
37
38
39
40
41
42
43
60
59
58
P3dB = 54.65 dBm (290 W)
57
56
P1dB = 53.54 dBm
(226 W)
55
Actual
54
VDD = 32 Vdc, IDQ = 1400 mA, Pulsed CW
12 μsec(on), 10% Duty Cycle, f = 2140 MHz
53
52
44
33
34
35
Pin, INPUT POWER (dBm)
36
37
38
39
40
41
42
43
44
45
Pin, INPUT POWER (dBm)
NOTE: Measured in a Peak Tuned Load Pull Fixture
NOTE: Measured in a Peak Tuned Load Pull Fixture
Test Impedances per Compression Level
P3dB
Ideal
P6dB = 54.88 dBm (307 W)
Zsource
Ω
Zload
Ω
4.43 - j11.85
0.81 - j2.87
Figure 17. Pulsed CW Output Power
versus Input Power @ 28 V
Test Impedances per Compression Level
P3dB
Zsource
Ω
Zload
Ω
4.43 - j11.85
0.72 - j2.87
Figure 18. Pulsed CW Output Power
versus Input Power @ 32 V
MRF7S21170HR3 MRF7S21170HSR3
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
G
2X
1
Q
bbb
M
T A
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. DELETED
M
B
(FLANGE)
3
K
2
bbb
M
D
T A
B
M
M
(INSULATOR)
M
bbb
M
T A
M
B
M
ccc
M
T A
M
B
M
N
R
ccc
M
T A
M
B
S
(LID)
aaa
M
T A
M
(LID)
M
(INSULATOR)
B
M
H
C
E
T
A
(FLANGE)
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
1
B
(FLANGE)
2
bbb
bbb
M
M
D
T A
T A
M
M
B
B
M
M
(INSULATOR)
M
T A
M
B
R
ccc
M
N
ccc
MILLIMETERS
MIN
MAX
33.91
34.16
13.6
13.8
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
3.00
3.51
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
CASE 465B - 03
ISSUE D
NI - 880
MRF7S21170HR3
B
K
INCHES
MIN
MAX
1.335
1.345
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
.118
.138
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
F
A
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
M
T A
M
S
(LID)
aaa
M
B
M
T A
M
B
(LID)
M
(INSULATOR)
M
H
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
0.905
0.915
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
22.99
23.24
13.60
13.80
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
C
F
E
T
A
A
(FLANGE)
SEATING
PLANE
CASE 465C - 02
ISSUE D
NI - 880S
MRF7S21170HSR3
MRF7S21170HR3 MRF7S21170HSR3
RF Device Data
Freescale Semiconductor
11
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
May 2006
• Initial Release of Data Sheet
1
June 2006
• Added Class C to description of parts, pg. 1
• Changeded “≥” to “ - ” in the Device Output Signal Par bullet, pg. 1
• Changed typ value from ±9 to 18 in Part - to - Part Phase Variation characteristic description in Table 4,
Typical Performances, p. 2
• Expanded the characterization range in the MTTF Factor graph from 200_C to 230_C, Fig. 12, p. 7
2
Aug. 2006
• Added Greater Negative Source bullet to Features section, p. 1
• Corrected Fig. 14, Single - Carrier W - CDMA Spectrum, to 3.84 MHz, p. 7
3
Sept. 2006
• Changed “Capable of Handling” bullet from 10:1 VSWR @ 28 Vdc to 5:1 VSWR @ 32 Vdc, pg. 1
• Added “Insertion” to Part - to - Part Phase Variation characteristic description in Table 4, Typical
Performances, p. 2
• Added Gain Flatness, Group Delay and Deviation from Linear Phase characteristics to Table 4, Typical
Performances, p. 2
• Corrected Z6 value from “0.119” to “0.156”, corrected Z8 value from “0.156” to “0.119”, corrected Z9 value
from “0.770” to “0.077”, corrected Z11 value from “0.076” to “0.760”, Fig. 1, Test Circuit Schematic, p. 3
• Added Part Number and Manufacturer for R1, R2 and R3 in Table 5, Test Circuit Component Designations
and Values, p. 3
• Added Figure 10, Digital Predistortion Correction, p. 6
• Corrected Fig. 15, Single - Carrier W - CDMA Spectrum, to correctly reflect integrated bandwidth offsets, p. 7
• Added Figure 17, Pulsed CW Output Power versus Input Power @ 28 Vdc, p. 9
• Added Figure 18, Pulsed CW Output Power versus Input Power @ 32 Vdc, p. 9
4
May 2007
• Removed “Designed for Digital Predistortion Error Correction Systems” bullet as functionality is standard,
p. 1
• Added “Optimized for Doherty Applications” bullet to Features section, p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
• Removed footnote and “Measured in Functional Test” from the RF test condition voltage callout for VGS(Q),
and added Fixture Gate Quiescent Voltage, VGG(Q) to On Characteristics table, p. 2
• Updated verbiage in Typical Performances table, p. 3
• Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part
numbers and updated obsoleted ATC600 series capacitors to ATC100 series, p. 4
• Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider
dynamic range, p. 7
• Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 8
• Fig. 14, CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal,
updated to include output power level at functional test, p. 8
5
Apr. 2008
• Corrected On Characteristics table ID value for VGS(th) from 270 μAdc to 372 μAdc and VDS(on) from
2.7 Adc to 3.72 Adc; tightened VGS(th) minimum and maximum values to match production
test values, p. 2
• Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 4
• Updated Fig. 14, CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test
Signal, to better represent production test signal, p. 8
MRF7S21170HR3 MRF7S21170HSR3
12
RF Device Data
Freescale Semiconductor
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MRF7S21170HR3 MRF7S21170HSR3
Document
Number:
RF
Device
Data MRF7S21170H
Rev. 5, 4/2008
Freescale
Semiconductor
13