PD - 91554E POWER MOSFET SURFACE MOUNT(SMD-1) Product Summary IRFN9240 JANTX2N7237U JANTXV2N7237U JANS2N7237U REF:MIL-PRF-19500/595 200V, P-CHANNEL ® Part Number RDS(on) ID IRFN9240 0.51Ω -11A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. SMD-1 Features: n n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Surface Mount Dynamic dv/dt Rating Light-weight Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight Units -11 -7.0 -44 125 1.0 ±20 500 -11 12.5 -5.5 -55 to 150 A W W/°C V mJ A mJ V/ns o C 300 (for 5 S) 2.6(typical) g For footnotes refer to the last page www.irf.com 1 01/29/02 IRFN9240 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min Typ Max Units — — V -0.2 — V/°C — — — — — — 0.51 0.52 -4.0 — -25 -250 Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 4.0 -100 100 60 15 38 35 85 85 65 — C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1200 570 81 — — V S( ) Ω Parameter BVDSS Drain-to-Source Breakdown Voltage -200 ∆BV DSS /∆T J Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source On-State — Resistance — VGS(th) Gate Threshold Voltage -2.0 g fs Forward Transconductance 4.0 IDSS Zero Gate Voltage Drain Current — — µA nA nC ns nH pF Test Conditions VGS = 0V, I D = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -10V, ID = -7.0A➃ VGS = -10V, ID = -11A ➃ VDS = VGS, ID = -250µA VDS > -15V, IDS = -7.0A➃ VDS= -160V, VGS= 0V VDS = -160V VGS = 0V, TJ = 125°C VGS = -20V VGS =20V VGS = -10V, ID= -11A VDS = -100V VDD = -100V, ID = -11A, RG =9.1Ω, VGS = -10V Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ — — — — -11 -44 A VSD trr Q RR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge — — — — — — -4.6 440 7.2 V nS µc ton Forward Turn-On Time Test Conditions Tj = 25°C, IS = -11A, VGS = 0V ➃ Tj = 25°C, IF = -11A, di/dt ≤-100A/µs VDD ≤ -30V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJ-PCB Junction to Case Junction to PC Board Min Typ Max — — — 4.0 1.0 — Units °C/W Test Conditions Soldered to a copper-clad PC board For footnotes refer to the last page 2 www.irf.com IRFN9240 Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFN9240 13a & b 4 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com IRFN9240 V DS VGS RD D.U.T. RG + V DD -10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf VGS 10% 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFN9240 L VDS D .U .T RG -10V -2 0V VD D A IA S D R IV E R 0 .0 1 Ω tp 15V Fig 12a. Unclamped Inductive Test Circuit IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG -10V 12V .2µF .3µF -10V QGS QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFN9240 Foot Notes: ➀ Repetitive Rating; Pulse width limited by ➂ ISD ≤ -11A, di/dt ≤ −150A/µs, maximum junction temperature. ➁ VDD =-50V, starting TJ = 25°C, L = 8.3mH Peak IL = -11A, VGS = -10V ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% VDD ≤ -200V, TJ ≤ 150°C, RG =7.5 Ω Case Outline and Dimensions — SMD-1 PAD ASSIGNMENTS 1- DRAIN 2- GATE 3- SOURCE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 11/02 www.irf.com 7