AP10N60W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS(ON) 0.75Ω ID G 10A S Description AP10N60 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. The TO-3P type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. The TO-3P package is widely preferred for commercial-industrial applications. The device is suited for switch mode power supplies, DC-AC converters and high current high speed switching circuits. G D S TO-3P Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage ± 30 V ID@TC=25℃ Continuous Drain Current, V GS @ 10V 10 A ID@TC=100℃ Continuous Drain Current, V GS @ 10V 5.8 A 36 A 156 W 50 mJ 10 A 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 2 EAS Single Pulse Avalanche Energy IAR Avalanche Current TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value Unit 0.8 ℃/W 40 ℃/W 1 200803181 AP10N60W o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS Parameter Test Conditions Drain-Source Breakdown Voltage 3 Min. Typ. Max. Units VGS=0V, ID=1mA 600 - - V VGS=10V, ID=4A - - 0.75 Ω RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=4A - 3.8 - S IDSS Drain-Source Leakage Current VDS=480V, VGS=0V - - 25 uA Drain-Source Leakage Current (Tj=150 C) VDS=480V, VGS=0V - - 250 uA Gate-Source Leakage VGS=±30V - - ±100 nA ID=8A - 45 72 nC o IGSS 3 Qg Total Gate Charge Qgs Gate-Source Charge VDS=480V - 11 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 15 - nC 3 td(on) Turn-on Delay Time VDD=300V - 16 - ns tr Rise Time ID=4A - 9 - ns td(off) Turn-off Delay Time RG=10Ω,VGS=4.7V - 48 - ns tf Fall Time RD=75Ω - 11 - ns Ciss Input Capacitance VGS=0V - 2380 3800 pF Coss Output Capacitance VDS=15V - 475 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 4.3 - pF Min. Typ. Tj=25℃, IS=8A, VGS=0V - - 1.5 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 3 3 Test Conditions Max. Units trr Reverse Recovery Time IS=8A, VGS=0V, - 550 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 9.2 - uC Notes: 1.Pulse width limited by Max. junction temperature. o 2.Starting Tj=25 C , VDD=50V , L=1.0mH , RG=25Ω , IAS=10A. 3.Pulse test THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2 AP10N60W 20 10 o T C =25 C ID , Drain Current (A) ID , Drain Current (A) 16 8 10V 6.0V 5.0V 6 V G = 4. 5 V T C =150 o C 10V 6.0V 12 8 5.0V 4 2 4 V G =4.5V 0 0 0 5 10 15 0 20 4 8 12 16 20 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.8 1.3 I D =4A V G =10V 2.4 Normalized RDS(ON) Normalized BVDSS (V) 1.2 1.1 1 2 1.6 1.2 0.9 0.8 25 0.8 -50 0 50 100 50 75 100 125 150 150 T j , Junction Temperature ( o C ) o T j , Junction Temperature ( C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 10 1.4 IS (A) T j = 150 o C Normalized VGS(th) (V) 1.2 T j = 25 o C 1 1 0.8 0.6 0.4 0.1 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP10N60W f=1.0MHz 10000 C iss 12 I D =8A V DS =480V C (pF) VGS , Gate to Source Voltage (V) 16 8 C oss 100 4 C rss 0 1 0 20 40 60 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 10 ID (A) 100us 1ms 1 10ms 100ms DC T c =25 o C Single Pulse Normalized Thermal Response (Rthjc) 1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-3P E A Millimeters SYMBOLS φ c1 D D1 b1 b2 MIN NOM MAX A 4.50 4.80 5.10 b b1 b2 c c1 0.90 1.00 1.30 1.80 2.50 3.20 1.30 -- 2.30 0.40 0.60 0.90 1.40 -- 2.20 D 19.70 20.00 20.30 D1 14.70 15.00 15.30 E 15.30 -- 16.10 e 4.45 5.45 6.45 L 17.50 -- 20.50 φ 3.00 3.20 3.40 L c 1.All Dimensions Are in Millimeters. b 2.Dimension Does Not Include Mold Protrusions. e Part Marking Information & Packing : TO-3P Part Number Package 10N60W LOGO YWWSSS Date Code (YWWSSS) Y :Last Digit Of The Year WW:Week SSS :Sequence 5