FDMS9600S tm Dual N-Channel PowerTrench® MOSFET Q1: 30V, 32A, 8.5mΩ Q2: 30V, 30A, 5.5mΩ Features General Description Q1: N-Channel This device includes two specialized MOSFETs in a unique dual Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 12A Power 56 package. It is designed to provide an optimal Synchronous Buck power stage in terms of efficiency and PCB Max rDS(on) = 12.4mΩ at VGS = 4.5V, ID = 10A utilization. The low switching loss "High Side" MOSFET is com- Q2: N-Channel plemented by a Low Conduction Loss "Low Side" SyncFET. Max rDS(on) = 5.5mΩ at VGS = 10V, ID = 16A Applications Max rDS(on) = 7.0mΩ at VGS = 4.5V, ID = 14A Synchronous Buck Converter for: Low Qg high side MOSFET Low rDS(on) low side MOSFET Notebook System Power Thermally efficient dual Power 56 package General Purpose Point of Load Pinout optimized for simple PCB design RoHS Compliant G1 D1 D1 G2 D1 S1/D2 S2 Q2 5 D1 S2 6 3 7 2 8 S2 4 Q1 1 Power 56 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS Drain to Source Voltage Parameter Q1 30 Q2 30 Units V Gate to Source Voltage ±20 ±20 V Drain Current 32 30 55 108 12 16 -Continuous (Package limited) TC = 25°C TC = 25°C -Continuous (Silicon limited) ID TA = 25°C -Continuous -Pulsed Power Dissipation for Single Operation PD TJ, TSTG (Note 1a) 60 60 (Note 1a) 2.5 (Note 1b) 1.0 Operating and Storage Junction Temperature Range A W -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 120 RθJC Thermal Resistance, Junction to Case 3 °C/W 1.2 Package Marking and Ordering Information Device Marking FDMS9600S Device FDMS9600S ©2008 Fairchild Semiconductor Corporation FDMS9600S Rev.D1 Package Power 56 1 Reel Size 13” Tape Width 12mm Quantity 3000 units www.fairchildsemi.com FDMS9600S Dual N-Channel PowerTrench® MOSFET September 2008 Symbol Parameter Test Conditions Type Min Q1 Q2 30 30 Typ Max Units Off Characteristics ID = 250µA, VGS = 0V ID = 1mA, VGS = 0V V BVDSS Drain to Source Breakdown Voltage ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V Q1 Q2 1 500 µA IGSS Gate to Source Leakage Current VGS = ±20V, VDS= 0V Q1 Q2 ±100 ±100 nA nA VGS = VDS, ID = 250µA VGS = VDS, ID = 1mA Q1 Q2 3 3 V ID = 250µA, referenced to 25°C ID = 1mA, referenced to 25°C Q1 Q2 35 29 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient rDS(on) gFS Drain to Source On Resistance Forward Transconductance ID = 250µA, referenced to 25°C ID = 1mA, referenced to 25°C VGS = 10V, ID = 12A VGS = 4.5V, ID = 10A VGS = 10V, ID = 12A , TJ = 125°C VGS = 10V, ID = 16A VGS = 4.5V, ID = 14A VGS = 10V, ID = 16A , TJ = 125°C VDD = 10V, ID = 12A VDD = 10V, ID = 16A 1 1 1.5 1.8 Q1 Q2 -4.5 -6.0 Q1 7.0 9.2 8.6 8.5 12.4 13.0 Q2 4.5 5.3 5.4 5.5 7.0 8.3 Q1 Q2 54 68 Q1 Q2 1280 2300 1705 3060 pF Q1 Q2 525 1545 700 2055 pF Q1 Q2 80 250 120 375 pF Q1 Q2 1.0 1.7 Q1 Q2 13 17 23 31 ns Q1 Q2 6 11 12 20 ns Q1 Q2 42 54 67 86 ns Q1 Q2 12 32 22 51 ns Q1 Q2 9 21 13 29 nC Q1 Q2 3 8 nC Q1 Q2 2.7 6.5 nC mV/°C mΩ S FDMS9600S Dual N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15V, VGS = 0V, f= 1MHz f = 1MHz Ω Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge FDMS9600S Rev.D1 VDD = 10V, ID = 1A, VGS = 10V, RGEN = 6Ω Q1 VDD = 15V, VGS = 4.5V, ID = 12A Q2 VDD = 15V, VGS = 4.5V, ID = 16A 2 www.fairchildsemi.com Symbol Parameter Test Conditions Type Min Typ Max Units 2.1 3.5 A Drain-Source Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current VSD VGS = 0V, IS = 2.1A V = 0V, IS = 3.5A Source to Drain Diode Forward Voltage GS VGS = 0V, IS = 8.2A trr Reverse Recovery Time Qrr Reverse Recovery Charge Q1 IF = 12A, di/dt = 100A/µs Q2 IF = 16A, di/dt = 300A/µs Q1 Q2 (Note 2) (Note 2) (Note 2) Q1 Q2 Q2 0.7 0.4 0.5 1.2 1.0 1.0 Q1 Q2 33 27 ns Q1 Q2 20 33 nC V Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a.50°C/W when mounted on a 1 in2 pad of 2 oz copper b. 120°C/W when mounted on a minimum pad of 2 oz copper FDMS9600S Dual N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. FDMS9600S Rev.D1 3 www.fairchildsemi.com VGS = 10V 50 ID, DRAIN CURRENT (A) 2.8 PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 VGS = 3.5V 40 30 VGS = 3V VGS = 6V VGS = 4.5V 20 VGS = 4V 10 0 0.0 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.6 2.4 2.2 1.4 1.0 0.8 1.1 1.0 0.9 0.8 0 25 50 75 100 125 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDD = 5V 40 30 TJ =125oC TJ = 25oC 10 TJ = -55oC 3.5 Figure 5. Transfer Characteristics FDMS9600S Rev.D1 50 60 PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX TJ = 125oC 10 5 TJ = 25oC 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX 1.5 2.0 2.5 3.0 VGS, GATE TO SOURCE VOLTAGE (V) ID = 6A 15 0 60 0 1.0 20 30 40 ID, DRAIN CURRENT(A) 20 150 Figure 3. Normalized On-Resistance vs Junction Temperature 20 10 25 TJ, JUNCTION TEMPERATURE (oC) 50 0 30 1.2 -25 VGS = 6V 1.2 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.3 0.7 -50 VGS = 4V VGS = 10V 1.6 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 VGS =3.5V 1.8 2.0 ID = 12A VGS =10V 1.5 VGS = 4.5V 2.0 Figure 1. On-Region Characteristics 1.6 PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX VGS = 3V FDMS9600S Dual N-Channel PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted 60 VGS = 0V 10 TJ = 125oC 1 TJ = 25oC 0.1 0.01 TJ = -55oC 1E-3 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 4 www.fairchildsemi.com VGS, GATE TO SOURCE VOLTAGE(V) 10 2000 ID = 12A 8 1000 CAPACITANCE (pF) VDD =10V 6 VDD = 15V 4 VDD = 20V 2 0 0 5 10 15 20 Coss 100 f = 1MHz VGS = 0V 30 0.1 25 Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 10 1ms 10ms SINGLE PULSE TJ = MAX RATE 100ms o RθJA = 120 C/W 0.1 1s TA = 25oC 10s DC THIS AREA IS LIMITED BY rDS(ON) 0.01 0.1 1 10 Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance vs Drain to Source Voltage 100 1 Ciss 100 300 100 VGS = 10V o TA = 25 C 10 1 0.5 -3 10 -2 -1 10 0 1 10 10 10 t, PULSE WIDTH (s) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area SINGLE PULSE o RθJA = 120 C/W FDMS9600S Dual N-Channel PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted 2 10 3 10 Figure 10. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE 0.002 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 11. Transient Thermal Response Curve FDMS9600S Rev.D1 5 www.fairchildsemi.com 2.8 VGS = 10V VGS = 3.5V 50 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 VGS = 4V VGS = 4.5V 40 VGS = 6V 30 VGS = 3V 20 PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX 10 0 0.0 0.2 0.4 0.6 0.8 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.0 1.8 1.4 1.2 1.0 0.8 0.6 -50 -25 2.4 2.2 2.0 1.8 0 25 50 75 100 125 1.4 1.2 1.0 0.8 150 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX VDD = 5V 40 30 TJ =125oC TJ = 25oC 10 TJ = -55oC 1.5 2.0 2.5 3.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4.0 10 20 30 40 ID, DRAIN CURRENT(A) 50 60 ID = 8A PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX 10 8 TJ = 125oC 6 4 TJ = 25oC 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 60 VGS = 0V 10 TJ = 125oC 1 0.1 TJ = 25oC 0.01 TJ = -55oC 1E-3 0.0 0.2 0.4 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.8 Figure 17. Source to Drain Diode Forward Voltage vs Source Current Figure 16. Transfer Characteristics FDMS9600S Rev.D1 0 Figure 15. On-Resistance vs Gate to Source Voltage 60 0 1.0 VGS = 10V 12 2 Figure 14. Normalized On-Resistance vs Junction Temperature 20 VGS = 3.5V VGS = 4V 1.6 TJ, JUNCTION TEMPERATURE (oC) 50 VGS = 6V VGS = 4.5V 14 ID = 16A VGS =10V 1.6 PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX VGS =3V Figure 13. Normalized on-Resistance vS Drain Current and Gate Voltage rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 12. On-Region Characteristics 2.6 FDMS9600S Dual N-Channel PowerTrench® MOSFET Typical Characteristics (Q2 SyncFET) 6 www.fairchildsemi.com 5000 ID = 16A 8 Ciss VDD =10V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 6 VDD = 15V 4 VDD = 20V 2 0 0 10 20 30 40 f = 1MHz VGS = 0V 100 0.1 50 Qg, GATE CHARGE(nC) Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 19. Capacitance vs Drain to Source Voltage Figure 18. Gate Charge Characteristics FDMS9600S Rev.D1 Coss 1000 7 30 FDMS9600S Dual N-Channel PowerTrench® MOSFET Typical Characteristics www.fairchildsemi.com FDMS9600S Dual N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout FDMS9600S Rev.D1 8 www.fairchildsemi.com F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ ® tm PDP SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ ™ TinyPower™ Saving our world, 1mW /W /kW at a time™ TinyPWM™ SmartMax™ TinyWire™ SMART START™ μSerDes™ SPM® STEALTH™ SuperFET™ UHC® SuperSOT™-3 Ultra FRFET™ SuperSOT™-6 UniFET™ SuperSOT™-8 VCX™ SupreMOS™ VisualMax™ SyncFET™ ® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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