MMBT6520LT1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −350 Vdc Collector −Base Voltage VCBO −350 Vdc Emitter −Base Voltage VEBO −5.0 Vdc Base Current IB −250 mA Collector Current − Continuous IC −500 mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C PD RqJA PD Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 1 BASE 2 EMITTER 3 1 2 SOT−23 (TO−236) CASE 318 STYLE 6 MARKING DIAGRAM 2Z M G G 1 2Z = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MMBT6520LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) MMBT6520LT3G SOT−23 10,000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2010 July, 2010 − Rev. 5 1 Publication Order Number: MMBT6520LT1/D MMBT6520LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector−Emitter Breakdown Voltage (IC = −1.0 mA) V(BR)CEO −350 − Vdc Collector−Base Breakdown Voltage (IC = −100 mA) V(BR)CBO −350 − Vdc Emitter−Base Breakdown Voltage (IE = −10 mA) V(BR)EBO −5.0 − Vdc Collector Cutoff Current (VCB = −250 V) ICBO − −50 nA Emitter Cutoff Current (VEB = −4.0 V) IEBO − −50 nA 20 30 30 20 15 − − 200 200 − − − − − −0.30 −0.35 −0.50 −1.0 − − − −0.75 −0.85 −0.90 OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (IC = −1.0 mA, VCE = −10 V) (IC = −10 mA, VCE = −10 V) (IC = −30 mA, VCE = −10 V) (IC = −50 mA, VCE = −10 V) (IC = −100 mA, VCE = −10 V) hFE − Collector−Emitter Saturation Voltage (IC = −10 mA, IB = −1.0 mA) (IC = −20 mA, IB = −2.0 mA) (IC = −30 mA, IB = −3.0 mA) (IC = −50 mA, IB = −5.0 mA) VCE(sat) Base−Emitter Saturation Voltage (IC = −10 mA, IB = −1.0 mA) (IC = −20 mA, IB = −2.0 mA) (IC = −30 mA, IB = −3.0 mA) VBE(sat) Base−Emitter On Voltage (IC = −100 mA, VCE = −10 V) VBE(on) − −2.0 Vdc fT 40 200 MHz Collector−Base Capacitance (VCB= −20 V, f = 1.0 MHz) Ccb − 6.0 pF Emitter−Base Capacitance (VEB= −0.5 V, f = 1.0 MHz) Ceb − 100 pF Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = −10 mA, VCE = −20 V, f = 20 MHz) http://onsemi.com 2 h FE , DC CURRENT GAIN 200 VCE = 10 V TJ = 125°C 100 25°C 70 -55°C 50 30 20 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 f, T CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) MMBT6520LT1G 100 70 50 TJ = 25°C VCE = 20 V f = 20 MHz 30 20 10 1.0 1.4 TJ = 25°C V, VOLTAGE (VOLTS) 1.2 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V IC + 10 IB 2.0 1.5 25°C to 125°C 1.0 0.5 0 -1.5 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 5.0 RqVC for VCE(sat) -55°C to 25°C 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 70 50 -2.5 1.0 70 100 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 4. Temperature Coefficients 1.0k 700 500 TJ = 25°C Ceb 30 -55°C to 125°C RqVB for VBE -2.0 Figure 3. “On” Voltages td @ VBE(off) = 2.0 V 300 20 VCE(off) = 100 V IC/IB = 5.0 TJ = 25°C 200 t, TIME (ns) C, CAPACITANCE (pF) 100 -1.0 0.2 10 7.0 5.0 Ccb tr 100 70 50 3.0 30 2.0 20 1.0 0.2 50 70 2.5 -0.5 0.4 0 1.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 2. Current−Gain — Bandwidth Product RθV, TEMPERATURE COEFFICIENTS (mV/ °C) Figure 1. DC Current Gain 2.0 10 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 200 1.0 Figure 5. Capacitance 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 6. Turn−On Time http://onsemi.com 3 50 70 100 MMBT6520LT1G IC, COLLECTOR CURRENT (A) 1 10k 7.0k 5.0k ts 3.0k t, TIME (ns) 2.0k 1.0k 700 500 VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25°C tf 300 200 100 1.0 s 0.01 0.001 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 10 ms 0.1 70 100 1 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 7. Turn−Off Time 1.0 0.7 0.5 1000 100 Figure 8. Safe Operating Area D = 0.5 0.2 0.3 0.2 0.1 SINGLE PULSE 0.05 P(pk) 0.1 0.07 0.05 RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) SINGLE PULSE t1 ZqJC(t) = r(t) • RqJC ZqJA(t) = r(t) • RqJA 0.03 0.02 t2 DUTY CYCLE, D = t1/t2 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k Figure 9. Thermal Response +VCC VCC ADJUSTED FOR VCE(off) = 100 V +10.8 V 2.2 k 20 k 50 W SAMPLING SCOPE 1.0 k 50 1/2MSD7000 -9.2 V PULSE WIDTH ≈ 100 ms tr, tf ≤ 5.0 ns DUTY CYCLE ≤ 1.0% FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES APPROXIMATELY -1.35 V (ADJUST FOR V(BE)off = 2.0 V) Figure 10. Switching Time Test Circuit http://onsemi.com 4 5.0k 10k MMBT6520LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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