Diodes MMBTA55 Pnp small signal surface mount transistor Datasheet

MMBTA55 / MMBTA56
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
·
Epitaxial Planar Die Construction
Complementary NPN Types Available
(MMBTA05 / MMBTA06)
Ideal for Medium Power Amplification and
Switching
SOT-23
Mechanical Data
·
·
·
·
·
·
·
B
Case: SOT-23, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
MMBTA55 Marking (See Page 2): K2H
MMBTA56 Marking (See Page 2): K2G
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approx.)
Maximum Ratings
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
a
0°
8°
C
B
·
·
Dim
A
TOP VIEW
C
E
D
E
G
H
K
J
M
L
C
B
E
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Symbol
MMBTA55
MMBTA56
Unit
Collector-Base Voltage
Characteristic
VCBO
-60
-80
V
Collector-Emitter Voltage
VCEO
-60
Emitter-Base Voltage
VEBO
-4.0
Collector Current - Continuous (Note 1)
IC
-500
mA
Power Dissipation (Note 1)
Pd
300
mW
RqJA
417
°C/W
Tj, TSTG
-55 to +150
°C
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Electrical Characteristics
-80
V
V
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
MMBTA55
MMBTA56
V(BR)CBO
-60
-80
¾
V
IC = -100mA, IE = 0
Collector-Emitter Breakdown Voltage
MMBTA55
MMBTA56
V(BR)CEO
-60
-80
¾
V
IC = -1.0mA, IB = 0
V(BR)EBO
-4.0
¾
V
Emitter-Base Breakdown Voltage
Collector Cutoff Current
MMBTA55
MMBTA56
MMBTA55
MMBTA56
IE = -100mA, IC = 0
VCB = -60V, IE = 0
VCB = -80V, IE = 0
VCE = -60V, IBO = 0V
VCE = -80V, IBO = 0V
ICBO
¾
-100
nA
ICEX
¾
-100
nA
hFE
100
¾
¾
IC = -10mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
-0.25
V
IC = -100mA, IB = -10mA
Base- Emitter Saturation Voltage
VBE(SAT)
¾
-1.2
V
IC = -100mA, VCE = -1.0V
fT
50
¾
MHz
VCE = -1.0V, IC = -100mA,
f = 100MHz
Collector Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
DS30054 Rev. 4 - 2
1 of 2
www.diodes.com
MMBTA55 / MMBTA56
Ordering Information
Notes:
(Note 3)
Device
Packaging
Shipping
MMBTA55-7
MMBTA56-7
SOT-23
3000/Tape & Reel
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
YM
Marking Information
K2x
K2x = Product Type Marking Code, ex: K2H = MMBTA55
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30054 Rev. 4 - 2
2 of 2
www.diodes.com
MMBTA55 / MMBTA56
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