IDB04E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 4 A VF 1.65 V T jmax 150 °C PG-TO263-3-2 • Low forward voltage • Easy paralleling 2 1 * RoHS compliant 3 Type Package IDB04E120 PG-TO263-3-2 Ordering Code - Marking Pin 1 D04E120 NC PIN 2 PIN 3 C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 1200 V Continous forward current IF A TC=25°C 11.2 TC=90°C 7.1 Surge non repetitive forward current I FSM 28 I FRM 16.5 TC=25°C, tp=10 ms, sine halfwave Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 Power dissipation W Ptot TC=25°C 43.1 TC=90°C 20.6 Operating and storage temperature Soldering temperature Tj , Tstg TS -55...+150 245 °C °C reflow soldering, MSL1 Rev.2.2 Page 1 2007-09-01 IDB04E120 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 2.9 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area 1) - 35 - K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Reverse leakage current IR µA V R=1200V, T j=25°C - - 100 V R=1200V, T j=150°C - - 350 Forward voltage drop VF V IF=4A, Tj=25°C - 1.65 2.15 IF=4A, Tj=150°C - 1.7 - 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.2 Page 2 2007-09-01 IDB04E120 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Reverse recovery time ns t rr V R=800V, IF=4A, di F/dt=750A/µs, Tj=25°C - 115 - V R=800V, IF=4A, di F/dt=750A/µs, Tj=125°C - 180 - V R=800V, IF=4A, di F/dt=750A/µs, Tj=150°C - 185 - Peak reverse current A I rrm V R=800V, IF = 4 A, diF/dt=750A/µs, Tj=25°C - 7.15 - V R=800V, IF =4A, diF /dt=750A/µs, T j=125°C - 8 - V R=800V, IF =4A, diF /dt=750A/µs, T j=150°C - 8.1 - Reverse recovery charge nC Q rr V R=800V, IF=4A, di F/dt=750A/µs, Tj=25°C - 330 - V R=800V, IF =4A, diF /dt=750A/µs, T j=125°C - 575 - V R=800V, IF =4A, diF /dt=750A/µs, T j=150°C - 630 - V R=800V, IF=4A, di F/dt=750A/µs, Tj=25°C - 6 - V R=800V, IF=4A, di F/dt=750A/µs, Tj=125°C - 7.8 - V R=800V, IF=4A, di F/dt=750A/µs, Tj=150°C - 7.8 - Reverse recovery softness factor Rev.2.2 S Page 3 2007-09-01 IDB04E120 1 Power dissipation 2 Diode forward current Ptot = f (TC) IF = f(TC) parameter: Tj ≤ 150°C parameter: Tj≤ 150°C 45 12 A W 10 9 30 8 IF P tot 35 7 25 6 20 5 15 4 3 10 2 5 0 25 1 50 75 100 0 25 150 °C 50 75 100 150 °C TC TC 3 Typ. diode forward current 4 Typ. diode forward voltage IF = f (VF) VF = f (Tj) 2.4 12 A 8A V -55°C 25°C 100°C 150°C 10 9 2 IF VF 8 7 1.8 4A 6 1.6 5 2A 4 1.4 3 2 1.2 1 0 0 0.5 1 1.5 2 1 -60 3 V VF Rev.2.2 Page 4 -20 20 60 100 160 °C Tj 2007-09-01 IDB04E120 5 Typ. reverse recovery time 6 Typ. reverse recovery charge trr = f (diF/dt) Qrr =f(diF/dt) parameter: V R = 800V, T j = 125°C parameter: VR = 800V, Tj = 125 °C 500 900 ns nC 400 800 8A 4A 2A 750 Q rr 350 trr 8A 300 700 250 650 200 600 150 550 100 500 50 450 0 200 300 400 500 600 700 800 400 200 A/µs 1000 di F/dt 4A 2A 300 400 500 600 700 800 A/µs 1000 diF/dt 7 Typ. reverse recovery current 8 Typ. reverse recovery softness factor Irr = f (diF/dt) S = f(diF /dt) parameter: V R = 800V, T j = 125°C parameter: VR = 800V, Tj = 125°C 20 12 A 8A 4A 2A 16 8A 4A 2A 10 9 S Irr 14 12 10 8 8 7 6 6 4 5 4 200 Rev.2.2 2 300 400 500 600 700 800 0 200 A/µs 1000 di F/dt Page 5 300 400 500 600 700 800 A/µs 1000 diF/dt 2007-09-01 IDB04E120 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T 10 1 IDP04E120 K/W ZthJC 10 0 10 -1 D = 0.50 10 -2 0.20 0.10 single pulse 0.05 0.02 10 -3 0.01 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Rev.2.2 Page 6 2007-09-01 IDB04E120 Rev.2.2 Page 7 2007-09-01 IDB04E120 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.2 Page 8 2007-09-01