PHILIPS LLE18300X Npn microwave power transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D159
LLE18300X
NPN microwave power transistor
Product specification
Supersedes data of September 1994
1999 Apr 22
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18300X
FEATURES
QUICK REFERENCE DATA
Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Interdigitated structure provides
high emitter efficiency
Microwave performance up to Tmb = 25 °C in a common emitter class AB
amplifier.
• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance
• Internal input and output
prematching ensures good stability
and allows an easier design of
wideband circuits.
MODE OF
OPERATION
f
(GHz)
Class AB (CW) 1.85
VCE
(V)
24
ICQ
(A)
0.1
PL1
(W)
≥27
ηC
(%)
Gpo
(dB)
≥7.8
Zi; ZL
(Ω)
typ. 40 see Figs
8 and 9
PINNING - SOT437A
PIN
DESCRIPTION
1
collector
2
base
3
emitter connected to flange
APPLICATION
Intended for use in common emitter,
class AB amplifiers in CW conditions
for professional applications between
1.7 GHz and 2 GHz.
handbook, 4 columns
1
c
b
3
e
DESCRIPTION
2
NPN silicon planar epitaxial
microwave power transistor in an
SOT437A glued cap metal ceramic
flange package, with emitter
connected to flange.
Top view
MAM112
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1999 Apr 22
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18300X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
45
V
VCBO
collector-base voltage
open emitter
−
VCER
collector-emitter voltage
RBE = 220 Ω
−
30
V
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
−
6
A
Pi
input power
f = 1.85 GHz; VCE = 24 V; class AB −
8
W
Ptot
total power dissipation
Tmb = 75 °C
50
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
200
°C
Tsld
soldering temperature
−
235
°C
−
t ≤ 10 s; 1
Note
1. Up to 0.2 mm from ceramic.
MBD734
10
MEA577
60
P tot
IC
(W)
(A)
40
Ι
ΙΙ
1
20
10 1
1
10
VCE (V)
0
10 2
0
50
100
150
200
T mb ( o C)
Tmb ≤ 75 °C.
(I) Region of permissible DC operation.
(II) Permissible extension provided RBE ≤ 220 Ω.
Fig.2 DC SOAR.
1999 Apr 22
Fig.3 Power derating curve.
3
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18300X
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-mb
thermal resistance from junction to mounting base
Rth mb-h
thermal resistance from mounting base to heatsink
MAX.
Tj = 100 °C
UNIT
2
K/W
0.2
K/W
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
CONDITIONS
MIN.
MAX.
UNIT
IE = 0; VCB = 20 V
−
3
mA
V(BR)CER
collector-emitter breakdown voltage
IC = 15 mA; RBE = 220 Ω
30
−
V
V(BR)CBO
collector-base breakdown voltage
IC = 15 mA
45
−
V
V(BR)EBO
emitter-base breakdown voltage
IE = 15 mA
3
−
V
hFE
DC current gain
IC = 1 A; VCE = 3 V
15
100
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier.
MODE OF
OPERATION
f
(GHz)
Class AB (CW) 1.85
1999 Apr 22
ICQ
(A)
VCE
(V)
24
PL1
(W)
≥27
typ. 30
0.1
4
Gpo
(dB)
≥7.8
typ. 8.6
ηC
(%)
typ. 40
Zi; ZL
(Ω)
see Figs 8
and 9
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18300X
30
handbook, full pagewidth
30
1.5
5.0 0.8
9.7
3.0 5.0
5.0 3.0 4.0
5.0
14.2
2.0
0.8
2.5
40
0.7
handbook, full pagewidth
2.5
2.5
5.0
6.0
,
V BB
C5
40
2.0
3.0
0.7
4.5
3.0
1.8
1.2
MEA598
VCC
C6
F1
input
L2
L1
C4
C1
C2
output
C3
Rr
MEA599
The test circuit is split into two independent halves, each being 30 x 40 mm in size.
Dimensions in mm.
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity: εr = 10.
Fig.4 Prematching test circuit board.
1999 Apr 22
5
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18300X
PREMATCHING TEST
CIRCUIT
handbook, full pagewidth
BIAS CIRCUIT
VCC
R1
C6
TR1
C5
R2
F1
P1
D1
R3
L2
C7
L1
DUT
D2
MEA600
Fig.5 Class AB bias circuit.
List of components (see Figs 4 and 5).
COMPONENT
DESCRIPTION
VALUE
ORDERING INFORMATION
TR1
transistor, BDT91 or equivalent
C1, C4
DC blocking chip capacitor
100 pF
ATC 100A101kp
C2, C3
trimmer capacitor
0.5 to 5.0 pF
Tekelec 727-1
C5, C6
feedthrough bypass capacitor
1500 pF
Erie 1250-003
C7
electrolytic capacitor
10 µF, >30 V
D1
diode BY239 or equivalent; 1
D2
diode BY239 or equivalent; 2
L1
4 turns 0.5 mm copper wire;
internal diameter = 2 mm
L2
3 turns 0.5 mm copper wire;
internal diameter = 2 mm
P1
linear potentiometer
4.7 kΩ
R1
resistor
100 Ω, 0.25 W
R2
resistor
10 kΩ, 0.25 W
R3
resistor
56 Ω, 0.25 W
F1
ferrite bead
Rr
copper rivet
Philips tube, 12NC = 4330 030 43081
4.2 x 2.2 x 3.2 mm (4B1)
Notes
1. In thermal contact with TR1.
2. In thermal contact with DUT.
1999 Apr 22
6
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18300X
MEA579
40
MBD733
20
handbook, halfpage
handbook, halfpage
d im
(dBc)
PL
(W)
I CQ =
10 mA
25
30
I CQ =
100 mA
50 mA
10 mA
20
30
50 mA
35
100 mA
10
40
45
0
0
2
4
P i (W)
0
6
5
10
15
20
Po (av) (W)
VCE = 24 V; f1 = 1850 MHz; f2 = 1850.2 MHz.
VCE = 24 V; f = 1850 MHz.
Fig.7
Fig.6 Load power as a function of input power.
Intermodulation distortion as a function
of average output power.
Input and optimum load impedances.
VCE = 24 V; ICQ = 0.1 A; Zo = 10 Ω (see Figs 8 and 9); typical values at PL = PL1.
f
(GHz)
Zi
(Ω)
ZL
(Ω)
1.70
5.6 + j4.0
3.0 - j1.6
1.75
6.4 + j2.7
2.7 - j1.7
1.80
6.3 + j1.1
2.4 - j1.8
1.85
5.5 + j0.2
2.2 - j1.9
1.90
4.4 − j0.8
2.0 - j2.1
1.95
3.4 - j1.0
1.8 - j2.3
2.00
2.6 - j0.8
1.7 - j2.5
1999 Apr 22
7
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18300X
1
handbook, full pagewidth
0.5
2
0.2
5
1.7 GHz
10
+j
0
0.2
0.5
1
2
5
∞
10
1.85 GHz
–j
2 GHz
10
Zi
5
0.2
2
0.5
MBD735
1
VCE = 24 V; Zo = 10 Ω; ICQ = 0.1 A.
Fig.8 Input impedance as a function of frequency; typical values at PL = PL1.
1
handbook, full pagewidth
0.5
2
0.2
5
10
+j
0
0.2
0.5
1
2
5
∞
10
1.7 GHz
–j
10
1.85 GHz
ZL
0.2
2 GHz
5
2
0.5
1
MBD736
VCE = 24 V; Zo = 10 Ω; ICQ = 0.1 A.
Fig.9 Optimum load impedance as a function of frequency; typical values at PL = PL1.
1999 Apr 22
8
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18300X
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 2 leads
SOT437A
D
A
F
3
D1
U1
B
q
C
c
1
H
U2
E
E1
A
w1 M A M B M
p
2
w2 M C M
b
0
Q
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
E
E1
F
H
p
Q
q
U1
U2
w1
w2
mm
4.98
4.32
1.66
1.40
0.13
0.08
6.48
6.22
6.48
6.22
6.48
6.22
6.48
6.22
1.65
1.40
17.02
16.00
3.43
3.18
2.29
2.03
14.22
19.02
18.77
6.48
6.22
0.25
0.51
0.196 0.065 0.005
0.170 0.055 0.003
0.255
0.245
0.255 0.255
0.245 0.245
0.255 0.065
0.245 0.055
0.67
0.63
0.135
0.125
0.90
0.80
0.560
0.749
0.739
0.255
0.010 0.020
0.245
inches
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
SOT437A
1999 Apr 22
EUROPEAN
PROJECTION
ISSUE DATE
99-03-29
9
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18300X
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 22
10
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18300X
NOTES
1999 Apr 22
11
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SCA63
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125002/00/03/pp12
Date of release: 1999 Apr 22
Document order number:
9397 750 05717