ASI CBSL60B Npn silicon rf power transistor Datasheet

CBSL60B
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .450 BAL FLG (A)
The ASI CBSL60B is Designed for
.060x45°
B
A
C
FEATURES:
FULL R
.100x45°
E
D
• Input Matching Network
•
• Omnigold™ Metalization System
P
F
G
H
K
J
M
N
L
MAXIMUM RATINGS
8.0 A
IC
MINIMUM
DIM
28 V
PDISS
O
146 W @ TC = 25 C
O
O
TJ
-65 C to +200 C
TSTG
-65 OC to +150 OC
θ JC
1.2 OC/W
CHARACTERISTICS
SYMBOL
.785 / 19.94
D
.455 / 11.56
E
.120 / 3.05
.465 / 11.81
.130 / 3.30
.230 / 5.84
F
3.5 V
VEBO
.130 / 3.30
.120 / 3.05
C
60 V
VCEO
inches / mm
.055 / 1.40
A
B
VCBO
MAXIMUM
inches / mm
G
.838 / 21.28
.850 / 21.59
H
1.095 / 27.81
1.105 / 28.07
J
.525 / 13.34
.535 / 13.59
K
.002 / 0.05
.005 / 0.15
L
.055 / 1.40
.065 / 1.65
M
.080 . 2.03
.095 / 2.41
.445 / 11.30
.455 / 11.56
.195 / 4.95
N
P
ORDER CODE: ASI10584
O
TC = 25 C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 100 mA
60
V
BVCEO
IC = 100 mA
28
V
BVEBO
IE = 20 mA
3.5
V
ICEO
VCE = 25 V
hFE
VCE = 5.0 V
PG
VCC = 26 V
POUT = 60 W
VSRW
VCC = 26 V
IC =3.0 A
ICQ = 2 X 200 mA
25
f = 960 MHz
f = 960 MHz
30
mA
80
---
8.5
dB
5:1
---
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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