CBSL60B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .450 BAL FLG (A) The ASI CBSL60B is Designed for .060x45° B A C FEATURES: FULL R .100x45° E D • Input Matching Network • • Omnigold™ Metalization System P F G H K J M N L MAXIMUM RATINGS 8.0 A IC MINIMUM DIM 28 V PDISS O 146 W @ TC = 25 C O O TJ -65 C to +200 C TSTG -65 OC to +150 OC θ JC 1.2 OC/W CHARACTERISTICS SYMBOL .785 / 19.94 D .455 / 11.56 E .120 / 3.05 .465 / 11.81 .130 / 3.30 .230 / 5.84 F 3.5 V VEBO .130 / 3.30 .120 / 3.05 C 60 V VCEO inches / mm .055 / 1.40 A B VCBO MAXIMUM inches / mm G .838 / 21.28 .850 / 21.59 H 1.095 / 27.81 1.105 / 28.07 J .525 / 13.34 .535 / 13.59 K .002 / 0.05 .005 / 0.15 L .055 / 1.40 .065 / 1.65 M .080 . 2.03 .095 / 2.41 .445 / 11.30 .455 / 11.56 .195 / 4.95 N P ORDER CODE: ASI10584 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 100 mA 60 V BVCEO IC = 100 mA 28 V BVEBO IE = 20 mA 3.5 V ICEO VCE = 25 V hFE VCE = 5.0 V PG VCC = 26 V POUT = 60 W VSRW VCC = 26 V IC =3.0 A ICQ = 2 X 200 mA 25 f = 960 MHz f = 960 MHz 30 mA 80 --- 8.5 dB 5:1 --- A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1