JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors D965 TO—92 TRANSISTOR（ NPN ） FEATURES 1.EMITTER Power dissipation PCM : 0.75 W（Tamb=25℃） Collector current ICM : 5 A Collector-base voltage V(BR)CBO : 42 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol 2. COLLECTOR 3. BASE 1 2 3 unless Test otherwise conditions specified） MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=1ｍA， IE=0 42 V Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA， IB=0 22 V Emitter-base breakdown voltage V(BR)EBO IE= 10 μA， IC=0 6 V Collector cut-off current ICBO VCB= 30 V , IE=0 0.1 μA Emitter cut-off current IEBO VEB= 6 V， IC=0 0.1 μA DC current gain Collector-emitter saturation voltage HFE（1） VCE= 2 V, mA IC= 0.15 HFE（2） VCE= 2V, HFE（3） VCE= 2V, mA VCE(sat) IC=3000mA,IB=100 mA IC = 500 mA IC = 2000 150 340 950 150 0.35 CLASSIFICATION OF HFE(2) Rank R T Range 340-600 560-950 V TO-92 PACKAGE OUTLINE DIMENSIONS D1 E C A A1 D b L φ e e1 Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.400 4.700 0.173 0.185 D1 3.430 E 4.300 0.135 4.700 0.169 1.270TYP e 0.185 0.050TYP e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 1.600 Ö 0.000 0.380 0.063 0.000 0.015