BAT54ALT1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. http://onsemi.com Features 30 VOLT SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODES • Extremely Fast Switching Speed • Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant CATHODE 1 ANODE 3 2 CATHODE MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage VR 30 V Forward Power Dissipation @ TA = 25°C Derate above 25°C PF 225 1.8 mW mW/°C IF 200 Max mA Non−Repetitive Peak Forward Current tp < 10 msec IFSM 600 mA Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% IFRM 300 mA Forward Current (DC) Junction Temperature TJ −55 to 150 °C Storage Temperature Range Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM 3 1 2 SOT−23 CASE 318 STYLE 12 B6M G G 1 B6 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† BAT54ALT1G SOT−23 (Pb−Free) 3000/Tape & Reel BAT54ALT3G SOT−23 (Pb−Free) 10,000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2010 August, 2010 − Rev. 11 1 Publication Order Number: BAT54ALT1/D BAT54ALT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Symbol Min Typ Max Unit V(BR)R 30 − − V Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT − 7.6 10 pF Reverse Leakage (VR = 25 V) IR − 0.5 2.0 mAdc Forward Voltage (IF = 0.1 mAdc) VF − 0.22 0.24 Vdc Forward Voltage (IF = 30 mAdc) VF − 0.41 0.5 Vdc Forward Voltage (IF = 100 mAdc) VF − 0.52 0.8 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1) trr − − 5.0 ns Forward Voltage (IF = 1.0 mAdc) VF − 0.29 0.32 Vdc Forward Voltage (IF = 10 mAdc) VF − 0.35 0.40 Vdc Characteristic Reverse Breakdown Voltage (IR = 10 mA) http://onsemi.com 2 BAT54ALT1G 820 W +10 V 2k 100 mH 0.1 mF IF tr 0.1 mF tp IF T trr 10% T DUT 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE 90% IR VR INPUT SIGNAL iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 100 1000 TA = 150°C IR, REVERSE CURRENT (mA) 85°C 10 1 50°C 1.0 25°C 0.1 0.0 −40°C −55°C 0.2 0.3 0.4 0.1 0.5 VF, FORWARD VOLTAGE (VOLTS) 100 10 1.0 TA = 85°C 0.1 0.01 0.001 0.6 TA = 125°C TA = 25°C 0 5 15 25 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 14 CT, TOTAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 1 25°C 12 10 8 6 4 2 0 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance http://onsemi.com 3 25 30 30 BAT54ALT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 12: PIN 1. CATHODE 2. CATHODE 3. ANODE L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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