1/2 GL5672 NPN LOW FREQUENCY TRANSISTOR Description The GL5672 is a low frequency transistor . Excellent DC current gain characteristics. Package Dimension REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.70 6.30 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings Parameter Junction Temperature Storage Temperature Symbol Ratings Tj +150 Unit Tstg -55 ~ +150 Collector to Base Voltage at Ta=25 VCBO 60 V Collector to Emitter Voltage at Ta=25 VCEO 50 V Emitter to Base Voltage at Ta=25 VEBO 6 V IC 3 A Collector Current at Ta=25 Collector Current (PULSE)(note1) IC 5 A Total Power Dissipation at Ta=25 PD 2 W Note1 :single pulse, PW=10ms Characteristics Symbol at Ta = 25 Min. Typ. Max. Unit BVCBO 60 - - V IC=50uA ,IE=0 BVCEO 50 - - V IC=1mA,IB=0 BVEBO 6 - - V IE=50uA ICBO - - 0.1 uA VCB=60V VEB=5V IEBO - - 0.1 uA VCE(sat) - 0.1 0.35 V hFE 120 - 400 FT - 210 - MHz 25 - pF Cob Note 1:Measured using pulse current. Classification Of hFE Rank Range A 120-240 B 200-400 Test Conditions IC=1A, IB=50mA (note1) VCE=2V, IC=0.5A (note1) VCE=2V, IE=0.5A, f=100MHz VCB=10V,IE=0, f=1MHz Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 FAX :86-21-38950165 2/2