ETL GL5672 N p n l o w f r e q u e n c y t r a n s i s t o r Datasheet

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GL5672
NPN LOW FREQUENCY TRANSISTOR
Description
The GL5672 is a low frequency transistor . Excellent
DC current gain characteristics.
Package Dimension
REF.
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0
10
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13 TYP.
2.30 REF.
6.30
6.70
6.70
6.30
3.30
3.70
3.30
3.70
1.40
1.80
Absolute Maximum Ratings
Parameter
Junction Temperature
Storage Temperature
Symbol
Ratings
Tj
+150
Unit
Tstg
-55 ~ +150
Collector to Base Voltage at Ta=25
VCBO
60
V
Collector to Emitter Voltage at Ta=25
VCEO
50
V
Emitter to Base Voltage at Ta=25
VEBO
6
V
IC
3
A
Collector Current at Ta=25
Collector Current (PULSE)(note1)
IC
5
A
Total Power Dissipation at Ta=25
PD
2
W
Note1 :single pulse, PW=10ms
Characteristics
Symbol
at Ta = 25
Min.
Typ.
Max.
Unit
BVCBO
60
-
-
V
IC=50uA ,IE=0
BVCEO
50
-
-
V
IC=1mA,IB=0
BVEBO
6
-
-
V
IE=50uA
ICBO
-
-
0.1
uA
VCB=60V
VEB=5V
IEBO
-
-
0.1
uA
VCE(sat)
-
0.1
0.35
V
hFE
120
-
400
FT
-
210
-
MHz
25
-
pF
Cob
Note 1:Measured using pulse current.
Classification Of hFE
Rank
Range
A
120-240
B
200-400
Test Conditions
IC=1A, IB=50mA
(note1)
VCE=2V, IC=0.5A (note1)
VCE=2V, IE=0.5A, f=100MHz
VCB=10V,IE=0, f=1MHz
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 FAX :86-21-38950165
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