LRC BAV74LT1 Monolithic dual switching diode Datasheet

LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
BAV74LT1
3
1
ANODE
3
CATHODE
1
2
ANODE
2
CASE 318–08, STYLE 9
SOT–23 (TO–236AB)
DEVICE MARKING
BAV74LT1 = JA
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Forward Current
Symbol
VR
IF
Value
50
200
Unit
Vdc
mAdc
Peak Forward Surge Current
I FM(surge)
500
mAdc
Symbol
Max
Unit
PD
225
mW
R θJA
PD
1.8
556
300
mW/°C
°C/W
mW
R θJA
T J , T stg
2.4
417
–55 to +150
mW/°C
°C/W
°C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board (1)
T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) ( EACH DIODE )
Characteristic
Symbol
Min
Max
Unit
50
—
Vdc
—
—
100
0.1
—
2.0
—
1.0
—
4.0
OFF CHARACTERISTICS
Reverse Breakdown Voltage
V (BR)
(I (BR) = 5.0 µAdc)
Reverse Voltage Leakage Current
IR
(V R = 50 Vdc, T J = 125°C)
(V R = 50Vdc)
Diode Capacitance
CD
(V R = 0, f = 1.0 MHz)
Forward Voltage
VF
(I F = 100 mAdc)
Reverse Recovery Time
t rr
(I F=IR=10mAdc, IR(REC)=1.0mAdc, measured at IR= 1.0 mA, RL=100Ω)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
µAdc
pF
Vdc
ns
G6–1/2
LESHAN RADIO COMPANY, LTD.
BAV74LT1
Curves Applicable to Each Anode
10
I R , REVERSE CURRENT (µA)
T A = 150°C
T A = 85°C
10
T A = – 40°C
1.0
T A = 25°C
0.1
T A = 125°C
1.0
T A = 85°C
0.1
T A = 55°C
0.01
T A = 25°C
0.001
0.2
0.4
0.6
0.8
1.0
1.2
0
V F , FORWARD VOLTAGE (VOLTS)
10
20
30
40
50
V R , REVERSE VOLTAGE (VOLTS)
Figure 1. Forward Voltage
Figure 3. Leakage Current
1.0
C T TOTAL CAPACITANCE (pF)
I F , FORWARD CURRENT (mA)
100
0.9
0.8
0.7
0.6
0
2
4
6
8
V R , REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
G6–2/2
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