APM4542K Dual Enhancement Mode MOSFET (N-and P-Channel) Pin Description Features • N-Channel D1 D1 30V/7A, RDS(ON) =17mΩ(typ.) @ VGS = 10V RDS(ON) =22mΩ(typ.) @ VGS = 4.5V • S1 G1 S2 G2 P-Channel Top View of SOP − 8 -30V/-5.5A, RDS(ON) =35mΩ(typ.) @ VGS =-10V RDS(ON) =51mΩ(typ.) @ VGS =-4.5V • • • (8) D1 (3) S2 (7) D1 Super High Dense Cell Design Reliable and Rugged (4) G2 Lead Free Available (RoHS Compliant) (2) G1 Applications • D2 D2 Power Management in Notebook Computer, S1 (1) Portable Equipment and Battery Powered D2 (5) D2 (6) N-Channel MOSFET P-Channel MOSFET Systems Ordering and Marking Information Package Code K : SOP-8 Operating Junction Tem p. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM 4542 Lead Free Code Handling Code Tem p. Range Package Code APM 4542 K : APM 4542 XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1 www.anpec.com.tw APM4542K Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter N Channel P Channel VDSS Drain-Source Voltage 30 -30 VGSS Gate-Source Voltage ±20 ±20 7 -5.5 28 -22 2 -2 ID* Continuous Drain Current IDM* Pulsed Drain Current IS* Diode Continuous Forward Current TJ Maximum Junction Temperature TSTG Storage Temperature Range PD* Power Dissipation RθJA* VGS=±10V Unit V A A 150 °C -55 to 150 TA=25°C 2 TA=100°C 0.8 Thermal Resistance-Junction to Ambient W °C/W 62.5 Note: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) APM4542K Test Condition Min. Typ. Max. Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=250µA N-Ch 30 VGS=0V, IDS=-250µA P-Ch -30 VDS=24V, VGS=0V Zero Gate Voltage Drain Current IDSS TJ=85°C VDS=-24V, VGS=0V TJ=85°C VGS(th) Gate Threshold Voltage IGSS RDS(ON) Gate Leakage Current a Drain-Source On-State Resistance Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 V 1 N-Ch 30 -1 P-Ch -30 VDS=VGS, IDS=250µA N-Ch 1 1.5 2 VDS=VGS, IDS=-250µA P-Ch 1 -1.5 -2 VGS=±20V, VDS=0V N-Ch ±100 P-Ch ±100 VGS=10V, IDS=7A N-Ch 17 24 VGS=-10V, IDS=-5.5A P-Ch 35 56 VGS=4.5V, IDS=5A N-Ch 22 30 VGS=-4.5V, IDS=-4A P-Ch 51 78 2 µA V nA mΩ www.anpec.com.tw APM4542K Electrical Characteristics (Cont.) Symbol Parameter (TA = 25°C unless otherwise noted) APM4542K Test Condition Min. Typ. Max. Unit Diode Characteristics VSD a Diode Forward Voltage Dynamic Characteristics Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time Tf N-Ch 0.7 1.3 ISD=-2.3A, VGS=0V P-Ch -1.7 -1.3 N-Ch 2 P-Ch 11 N-Channel VGS=0V, VDS=25V, Frequency=1.0MHz N-Ch 835 P-Ch 950 N-Ch 145 P-Channel VGS=0V, VDS=-25V, P-Ch 160 N-Ch 15 P-Ch 110 N-Ch 11 20 P-Ch 12 24 N-Ch 17 28 P-Ch 15 29 N-Ch 36 62 P-Ch 35 60 N-Ch 20 36 P-Ch 15 30 N-Channel VDS=15V, VGS=10V, IDS=7A N-Ch 19 25 P-Ch 33 43 N-Ch 1.6 P-Channel VDS=-15V, VGS=-10V, IDS=-5.5A P-Ch 5 N-Ch 3.6 P-Ch 4 V b RG td(OFF) ISD=2A, VGS=0V VGS=0V,VDS=0V,F=1MHz N-Channel VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω Turn-off Delay Time P-Channel VDD=-15V, RL=15Ω, IDS=-1A, VGEN=-10V, RG=6Ω Turn-off Fall Time Gate Charge Characteristics Ω pF ns b Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge nC Notes:: a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 3 www.anpec.com.tw APM4542K Typical Characteristics N-Channel Drain Current Power Dissipation 2.5 8 2.0 ID - Drain Current (A) Ptot - Power (W) 6 1.5 1.0 4 2 0.5 o o 0.0 TA=25 C 0 20 40 60 0 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance im it Normalized Transient Thermal Resistance 100 on )L 300µs s( 10 1ms Rd ID - Drain Current (A) TA=25 C,VG=10V 10ms 1 100ms 1s 0.1 DC O TA=25 C 0.01 0.01 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 100 VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 2 Mounted on 1in pad o RθJA : 62.5 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM4542K Typical Characteristics (Cont.) N-Channel Output Characteristics Drain-Source On Resistance 30 40 VGS= 4, 5, 6, 7, 8, 9, 10V 35 RDS(ON) - On - Resistance (mΩ) ID - Drain Current (A) 25 20 3V 15 10 5 VGS=4.5V 30 25 20 VGS=10V 15 10 2V 0 0 1 2 3 4 5 5 0 5 10 15 20 25 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 30 30 1.6 IDS =250µA Normalized Threshold Voltage ID - Drain Current (A) 25 20 o 15 Tj=125 C 10 o o Tj=-55 C Tj=25 C 5 0 0 1 2 3 4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 5 VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1.4 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.anpec.com.tw APM4542K Typical Characteristics (Cont.) N-Channel Drain-Source On Resistance Source-Drain Diode Forward 1.8 30 VGS = 10V IDS = 7A 10 o 1.4 IS - Source Current (A) Normalized On Resistance 1.6 1.2 1.0 0.8 Tj=150 C o Tj=25 C 1 0.6 o 0.4 -50 -25 RON@T j=25 C: 17mΩ 0 25 50 75 0.1 0.0 100 125 150 0.6 0.8 1.0 1.2 VSD - Source - Drain Voltage (V) Capacitance Gate Charge 1.4 10 Frequency=1MHz VDS=15V IDS =7A VGS - Gate - source Voltage (V) 1200 C - Capacitance (pF) 0.4 Tj - Junction Temperature (°C) 1400 1000 Ciss 800 600 400 Coss 200 Crss 0 0.2 0 5 10 15 20 25 6 4 2 0 30 0 4 8 12 16 20 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 8 6 www.anpec.com.tw APM4542K Typical Characteristics (Cont.) P-Channel Power Dissipation Drain Current 2.5 7 6 5 -ID - Drain Current (A) Ptot - Power (W) 2.0 1.5 1.0 4 3 2 0.5 1 o 0.0 0 20 40 60 0 80 100 120 140 160 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance it n) L im 10 ds (o 1ms R -ID - Drain Current (A) 0 Tj - Junction Temperature (°C) 100 10ms 1 100ms 1s 0.1 DC O TA=25 C 0.01 0.01 TA=25 C,VG=-10V 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 100 -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 2 Mounted on 1in pad o RθJA : 62.5 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 7 www.anpec.com.tw APM4542K Typical Characteristics (Cont.) P-Channel Output Characteristics Drain-Source On Resistance 24 80 VGS= -5, -6, -7, -8, -9, -10V -4V 70 RDS(ON) - On - Resistance (mΩ) -ID - Drain Current (A) 20 16 12 8 -3V 4 0 0 2 4 6 8 60 50 40 VGS= -10V 30 20 10 10 VGS= -4.5V 0 4 8 12 16 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 22 1.75 24 IDS= -250µΑ 20 1.50 Normalized Threshold Voltage 18 16 -ID - Drain Current (A) 20 14 12 10 8 o Tj=125 C 6 o 4 Tj=-55 C o Tj=25 C 1.25 1.00 0.75 0.50 0.25 2 0 0 1 2 3 4 0.00 -50 -25 5 -VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 8 www.anpec.com.tw APM4542K Typical Characteristics (Cont.) P-Channel Drain-Source On Resistance Source-Drain Diode Forward 1.8 20 VGS = -10V IDS = -5.5A 10 o Tj=150 C 1.4 -IS - Source Current (A) Normalized On Resistance 1.6 1.2 1.0 0.8 o Tj=25 C 1 0.6 o 0.4 -50 -25 RON@Tj=25 C: 35mΩ 0 25 50 75 0.1 0.0 100 125 150 0.6 0.8 1.0 1.2 -VSD - Source - Drain Voltage (V) Capacitance Gate Charge 1.4 10 VDS= -10V Frequency=1MHz 9 -VGS - Gate - source Voltage (V) 1250 C - Capacitance (pF) 0.4 Tj - Junction Temperature (°C) 1500 Ciss 1000 750 500 250 Coss Crss 0 0.2 0 5 10 15 20 25 7 6 5 4 3 2 1 0 5 10 15 20 25 30 35 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 8 0 30 ID= -5.5A 9 www.anpec.com.tw APM4542K Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 1 L 0.004max. Dim A Mi ll im et er s Inche s A Min. 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1. 27B S C 0. 50B S C 8° 8° 10 www.anpec.com.tw APM4542K Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP C ritical Zone T L to T P T e m p e ra tu re R am p-up TL tL T sm ax T sm in R am p-down ts Preheat 25 t 25 °C to Peak T im e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 11 www.anpec.com.tw APM4542K Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Tem peratures 3 3 Package Thickness Volum e m m Volum e m m <350 ≥350 <2.5 m m 240 +0/-5°C 225 +0/-5°C ≥2.5 m m 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Tem peratures 3 3 3 Package Thickness Volum e mm Volum e mm Volum e mm <350 350-2000 >2000 <1.6 m m 260 +0°C* 260 +0°C* 260 +0°C* 1.6 m m – 2.5 m m 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 m m 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0°C. For exam ple 260°C+0°C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E P Po D P1 Bo F W Ao Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 D1 12 Ko www.anpec.com.tw APM4542K Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application A 330±1 SOP-8 F 5.5 ± 0.1 B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 D D1 Po 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 T1 12.4 +0.2 T2 2± 0.2 W 12 + 0.3 - 0.1 P1 2.0 ± 0.1 Ao 6.4 ± 0.1 Bo 5.2± 0.1 Carrier Width 12 E 1.75± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm) Cover Tape Dimensions Application SOP- 8 P 8± 0.1 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 13 www.anpec.com.tw