TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/488 Devices Qualified Level 2N5671 JAN JANTX JANTXV 2N5672 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Temperature Range Symbol 2N5671 2N5672 Unit VCEO VCBO VEBO IB IC 90 120 120 150 Vdc Vdc Vdc Adc Adc W W 0 C PT Top, Tstg 7.0 10 30 6.0 140 -65 to +200 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 34.2 mW/0C for TA > +250C 2) Derate linearly 800 mW/0C for TC > +250C Symbol RθJC Max. 1.25 Unit C/W TO-3* (TO-204AA) 0 *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit 2N5671 2N5672 V(BR)CEO 90 120 Vdc 2N5671 2N5672 V(BR)CER 110 140 Vdc 2N5671 2N5672 V(BR)CEX 120 150 Vdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Cutoff Current VCE = 80 Vdc Collector-Emitter Cutoff Current VCE = 110 Vdc, VBE = 1.5 Vdc VCE = 135 Vdc, VBE = 1.5 Vdc 2N5671 2N5672 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 ICEO 10 mAdc ICEX 12 10 mAdc 120101 Page 1 of 2 2N5671, 2N5672 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit 25 25 mAdc OFF CHARACTERISTICS (con’t) Collector-Base Cutoff Current VCB = 120 Vdc VCB = 150 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc ON CHARACTERISTICS 2N5671 2N5672 ICBO 10 IEBO mAdc (3) Forward-Current Transfer Ratio IC = 15 Adc, VCE = 2.0 Vdc IC = 20 Adc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 15 Adc, IB = 1.2 Adc IC = 30 Adc, IB = 6.0Adc Base-Emitter Saturation Voltage IC = 15 Adc, IB = 1.2 Adc hFE 20 20 100 VCE(sat) 0.75 5.0 Vdc VBE(sat) 1.5 Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 2.0 Adc, VCE = 10 Vdc, f = 5.0 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz hfe 10 40 900 pF on 0.5 µs off 1.5 µs Cobo SWITCHING CHARACTERISTICS Turn-On Time VCC = 30 ± 2.0 Vdc; IC = 15 Adc; IB1 = 1.2 Adc Turn-Off Time VCC = 30 ± 2.0 Vdc; IC = 15 Adc; IB1 = IB2 = 1.2 Adc t t SAFE OPERATING AREA DC Tests TC = +250C, 1 Cycle, t = 1.0 s Test VCE = 24 Vdc, IC = 5.8 Adc Test 2 VCE = 45 Vdc, IC = 0.9 Adc Test 3 VCE = 4.67 Vdc, IC = 30 Adc Test 4 VCE = 90 Vdc, IC = 0.19 Adc 2N5671 Test 5 VCE = 120 Vdc, IC = 0.11 Adc 2N5672 (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2