HMC441LP3 / 441LP3E v04.0508 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Typical Applications Features The HMC441LP3 / HMC441LP3E is a medium PA for: Gain: 14 dB • Point-to-Point Radios Saturated Power: +20 dBm @ 20% PAE • Point-to-Multi-Point Radios Single Supply Voltage: +5V w/ Optional Gate Bias • VSAT LINEAR & POWER AMPLIFIERS - SMT 11 50 Ohm Matched Input/Output • LO Driver for HMC Mixers 16 Lead 3x3mm SMT Package: 9mm2 • Military EW & ECM Functional Diagram General Description The HMC441LP3 & HMC441LP3E are broadband GaAs PHEMT MMIC Medium Power Amplifiers which operate between 6.5 and 13.5 GHz. The leadless plastic QFN surface mount packaged amplifier provides 14 dB of gain, +20 dBm saturated power at 20% PAE from a +5V supply voltage. An optional gate bias is provided to allow adjustment of gain, RF output power, and DC power dissipation. This 50 Ohm matched amplifier does not require any external components making it an ideal linear gain block or driver for HMC SMT mixers. Vgg1, Vgg2: Optional Gate Bias Electrical Specifi cations, TA = +25° C, Vdd = 5V, Vgg1 = Vgg2 = Open Parameter Min. Frequency Range Gain 10 Gain Variation Over Temperature 12 0.025 5.0 90 10 0.025 18 14 29 26 90 dB 0.025 dB/ °C dB 13 dB 17 dBm 19.5 dBm 29 dBm 4.75 115 Units GHz 14 4.5 115 Max. 13 0.02 20 26 Typ. 11.0 - 13.5 15 15 26 Supply Current (Idd) Min. 15 16 Noise Figure Max. 14 0.02 18.5 23 Typ. 8.0 - 11.0 12 13 Saturated Output Power (Psat) 11 - 94 Min. 12 Output Return Loss Output Third Order Intercept (IP3) Max. 13 0.02 Input Return Loss Output Power for 1 dB Compression (P1dB) Typ. 6.5 - 8.0 90 dB 115 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com mA HMC441LP3 / 441LP3E v04.0508 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Broadband Gain & Return Loss Gain vs. Temperature 20 20 15 16 5 S21 S11 S22 0 GAIN (dB) RESPONSE (dB) 10 -5 12 +25 C +85 C -40 C 8 -10 -15 11 4 -25 0 4 5 6 7 8 9 10 11 12 13 14 15 16 6 7 8 FREQUENCY (GHz) Input Return Loss vs. Temperature 11 12 13 14 0 +25 C +85 C -40 C +25 C +85 C -40 C -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) 10 Output Return Loss vs. Temperature 0 -10 -15 -20 -10 -15 -20 -25 -25 6 7 8 9 10 11 12 13 14 6 7 8 FREQUENCY (GHz) 10 11 12 13 14 12 13 14 Psat vs. Temperature 24 20 20 Psat (dB) 24 16 +25 C +85 C -40 C 12 9 FREQUENCY (GHz) P1dB vs. Temperature P1dB (dB) 9 FREQUENCY (GHz) 8 LINEAR & POWER AMPLIFIERS - SMT -20 16 +25 C +85 C -40 C 12 8 4 4 6 7 8 9 10 11 FREQUENCY (GHz) 12 13 14 6 7 8 9 10 11 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 95 HMC441LP3 / 441LP3E v04.0508 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Power Compression @ 10 GHz Output IP3 vs. Temperature 36 20 Pout Gain PAE 18 32 16 14 IP3 (dBm) 11 Pout (dBm), GAIN (dB), PAE (%) 22 12 10 8 28 24 6 +25 C +85 C -40 C 20 4 0 -10 16 -6 -2 2 6 7 8 9 INPUT POWER (dBm) 12 13 14 210 35 32 GAIN (dB), P1dB (dBm), Psat (dBm) GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 11 Gain, Power & Idd vs. Gate Voltage @ 10 GHz Gain, Power & Output IP3 vs. Supply Voltage @ 10 GHz 30 28 26 Gain P1dB Psat IP3 24 22 20 18 16 14 12 180 30 Gain P1dB Psat 25 Idd 150 20 120 15 90 10 60 5 30 0 0 10 3 3.5 4 4.5 5 5.5 -2 -1.8 -1.6 -1.4 Vdd Supply Voltage (V) -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 Vgg1, Vgg2 Gate Volltage (V) Reverse Isolation vs. Temperature Noise Figure vs. Temperature 10 0 +25 C +85 C -40 C -10 ISOLATION (dB) 8 NOISE FIGURE (dB) 10 FREQUENCY (GHz) 6 4 2 +25 C +85 C -40 C -20 -30 -40 0 -50 6 7 8 9 10 11 FREQUENCY (GHz) 11 - 96 6 10 12 13 14 6 7 8 9 10 11 12 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 13 14 Idd (mA) LINEAR & POWER AMPLIFIERS - SMT 2 HMC441LP3 / 441LP3E GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Typical Supply Current vs. Vdd Absolute Maximum Ratings Drain Bias Voltage (Vdd) +6 Vdc Gate Bias Voltage (Vgg1,Vgg2) -8 to 0 Vdc Vdd (V) Idd (mA) +5.5 92 RF Input Power (RFIN)(Vdd = +5 Vdc) +15 dBm +5.0 90 Channel Temperature 175 °C +4.5 88 +3.3 83 +3.0 82 Continuous Pdiss (T = 85 °C) (derate 8.5 mW/°C above 85 °C) 0.76 W Thermal Resistance (channel to ground paddle) 118.2 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Note: Amplifier will operate over full voltage range shown above ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE 11 LINEAR & POWER AMPLIFIERS - SMT v04.0508 SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC441LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC441LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] 441 XXXX [2] 441 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 97 HMC441LP3 / 441LP3E v04.0508 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Pin Descriptions Pin Number Function Description 1, 3-5, 8-10, 12-14, 16 N/C This pin may be connected to RF/DC ground. 2 RFIN This pin is AC coupled and matched to 50 Ohms. 6, 7 Vgg1, Vgg2 Optional gate control for amplifier. If left open, the amplifier will run at standard current. Negative voltage applied will reduce current. 11 RFOUT This pin is AC coupled and matched to 50 Ohms. 15 Vdd Power Supply Voltage for the amplifier. An external bypass capacitor of 100 pF is required. GND Package bottom must be connected to RF/DC ground. LINEAR & POWER AMPLIFIERS - SMT 11 11 - 98 Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC441LP3 / 441LP3E v04.0508 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Evaluation PCB List of Materials for Evaluation PCB 106705 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 - J7 DC Pin C1 4.7 μF Capacitor, Tantalum C2 - C4 100 pF Capacitor, 0402 Pkg. U1 HMC441LP3 / HMC441LP3E Amplifier PCB [2] 106639 Evaluation PCB, 10 mils [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com LINEAR & POWER AMPLIFIERS - SMT 11 11 - 99