Infineon CGY41 Hirel l- and s-band gaas general purpose amplifier Datasheet

CGY41
HiRel L- and S-Band GaAs General Purpose Amplifier
• HiRel Discrete and Microwave Semiconductor
• Single-stage monolithic microwave IC
(MMIC-amplifier )
• Application range: 100 MHz to 3 GHz
4
3
1
2
• Gain: 9.5 dB typ. @ 1.8 GHz
• Low noise figure: 2.7 dB typ. @ 1.8 GHz
• Bandwidth: 3 GHz typ. @ -3 dB, VSWR < 2 : 1 *
Operating voltage range: 3 to 5.5 V
• Input and output matched to 50 Ω
• Individual current control with neg. gate bias
• Hermetically sealed ceramic package micro-x
ESD:
Electrostatic discharge sensitive device,
observe handling precautions!
Type
Marking
Ordering Code Circuit Diagram
Package
(Pin Configuration)
CGY41 (ql)
(ql) Quality Level:
-
see below
Micro-X
P: Professional Quality,
Ordering Code:
on request
H: High Rel Quality,
Ordering Code:
on request
S: Space Quality,
Ordering Code:
on request
ES: ESA Space Quality,
Ordering Code:
on request
(see order instructions for ordering example)
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Maximum ratings
Symbol
Value
Unit
Drain-voltage
VD
5.5
V
Gate-voltage
VG
-4 ... 0
V
VDG
9.5
V
PRFIN
16
dBm
TCh
175
°C
Tstg
-55...+175
°C
Ptot
440
mW
RthChS
155
K/W
Drain-gate voltage
RF Input power
1)
Channel temperature
Storage temperature range
Total power dissipation (TS < 82°C)
2)
Thermal resistance
Channel-soldering point
2)
Notes: Exceeding any of the max. ratings may cause permanent damage to the device. Appropriate
handling is required to protect the electrostatic sensitive MMIC against degradation due to excess
voltage or current spikes. Proper ground connection of leads 2 and 4 ( with min. inductance ) is required
to achieve the guaranteed RF performance, stable operating conditions and adequate cooling.
1) @ VD > 4.5 V derating required.
2) Ts is measured on the source lead at the soldering point to the PCB.
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Electrical Characteristics
TA = 25 °C,
VG = 0 V,
VD = 4.5 V,
RS = RL = 50 Ω,==unless otherwise specified
(for application circuit see next page)
Characteristics
Symbol
min
typ
max
Unit
Drain current
ID
40
60
80
mA
Power gain
f = 200 MHz
f = 1800 MHz
G
9.5
8.5
10.5
9.5
12
11
-
0.4
1.1
2
Gain flatness
f = 200 to 1000 MHz
f = 800 to 1800 MHz
Noise figure
dB
∆G
F
dB
f = 200 to 1000 MHz
f = 800 to 1800 MHz
Input return loss
2.5
-
-
2.7
4.0
dB
-
13
12
9.5
dB
RLOUT
f = 200 to 1000 MHz
f = 800 to 1800 MHz
Third order intercept point
-
RLIN
f = 200 to 1000 MHz
f = 800 to 1800 MHz
Output return loss
dB
-
12
-
-
12
9.5
IP3
dBm
Two tone intermodulation test
f1 = 806 MHz, f2 = 810 MHz
31
32
-
-
18
-
P0 = 10 dBm ( both carriers )
1dB gain compression
P1 dB
f = 200 to 1800 MHz
Gain control dynamic range,
dBm
∆G
dB
(per gate control voltage)
f = 200 to 1000 MHz
f = 800 to 1800 MHz
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-
30
-
-
20
-
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CGY41
Application Circuit ( f = 800 to 1800 MHz )
V
D
V
G
C
3
D
L
L
2
2
C1
Input
50Ohm
C
3
L
C
CGY41
1
4
3
Output
2
1
50Ohm
4
50 Ohm Microstripline
Legend of components
C1 , C2
C3 , C4
L1
L2, L3
D
Chip capacitors 100 pF
Chip capacitors 1 nF
For optimized input matching
- discrete inductor: approx. 3nH, or
- printed microstripline inductor: Z approx. 100 Ω,
le approx. 5 mm
- discrete inductor: approx. 40 nH, as e.g. 5 turns 0.25 mm copper
wire on nylon rod with M3-thread, or
- printed microstripline inductor
Z diode 5.6 V ( type BZW 22 C5 V 6 )
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Total Power Dissipation Ptot = f (TS;TA)
500
P
tot
[ mW ]
400
TS
300
TA
200
100
0
Semiconductor Group
0
150
50
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100
TA ; TS [ °C ]
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CGY41
Order Instructions:
Full type variant including quality level must be specified by the orderer. For HiRel Discrete
and Microwave Semiconductors the ordering code specifies device family and quality level
only.
Ordering Form:
Ordering Code: Q..........
CGY41 (ql)
(ql): Quality Level
Ordering Example:
tbd
Further Informations:
See our WWW-Pages:
- Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.infineon.com/products/discrete/hirel.htm
- HiRel Discrete and Microwave Semiconductors
www.infineon.com/products/discrete/hirel.htm
Please contact also our marketing division :
Tel.:
Fax.:
++89 234 24480
++89 234 28438
e-mail:
Address:
[email protected]
Infineon Technologies Semiconductors,
High Frequency Products Marketing,
P.O.Box 801709,
D-81617 Munich
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CGY41
Micro-X Package
Published by Infineon Technologies Semiconductors, High
Frequency Products Marketing, P.O.Box 801709, D-81617
Munich.
Infineon Technologies AG 1998. All Rights Reserved.
As far as patents or other rights of third parties are concerned,
liability is only assumed for components per se, not for
applications, processes and circuits implemented within
components or assemblies.
The information describes the type of component and shall not be
considered as assured characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please contact
the Offices of Semiconductor Group in Germany or the Infineon
Technologies Companies and Representatives woldwide (see
address list).
Due to technical requirements components may contain
dangerous substances. For information on the type in question
please contact your nearest Infineon Technologies Office,
Semiconductor Group.
Infineon Technologies Semiconductors is a certified CECC and
QS9000 manufacturer (this includes ISO 9000).
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