Renesas HAT3019R-EL-E Silicon n/p channel power mos fet power switching Datasheet

Preliminary Datasheet
HAT3019R
Nch 100V, 3.5A, 115mΩmax.
Pch -100V, -2.3A, 300mΩmax
Silicon N/P Channel Power MOS FET
Power Switching
R07DS1324EJ0700
Rev.7.00
Feb 18, 2016
Features




Capable of 4.5 V gate drive
Low drive current
High density mounting
Pb-free
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
87
5 6
D D
7 8
D D
65
1
4
G
2
G
4
23
S1
S3
Nch
Pch
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
VDSS
VGSS
ID
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
ID(pulse)Note1
IDR
Pch Note2
Pch Note3
Tch
Tstg
Ratings
Nch
100
±20
3.5
21
3.5
Pch
–100
±20
–2.3
–13.8
–2.3
2.0
3.0
150
–55 to +150
Unit
V
V
A
A
A
W
W
C
C
Notes: 1. PW  10 s, duty cycle  1 %
2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW  10s
3. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW  10s
R07DS1324EJ0700 Rev.7.00
Feb 18, 2016
Page 1 of 10
HAT3019R
Preliminary
Electrical Characteristics
• N Channel
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Typ
—
—
—
—
—
90
Max
—
—
± 10
1
2.5
115
Unit
V
V
A
A
V
m
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100A, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 100 V, VGS = 0
VDS = 10 V, I D = 1 mA
RDS(on)
Min
100
±20
—
—
1.0
—
RDS(on)
—
120
160
m
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
|yfs|
Ciss
Coss
Crss
Qg
Qgs
3.6
—
—
—
—
—
6
815
85
42
15
2.2
—
—
—
—
—
—
S
pF
pF
pF
nC
nC
ID = 1.75 A,
VGS = 4.5 V Note4
ID = 1.75 A, VDS = 10 V Note4
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Qgd
td(on)
tr
td(off)
tf
VDF
—
—
—
—
—
—
—
3.2
10
6.5
54
6.5
0.80
35
—
—
—
—
—
1.04
—
nC
ns
ns
ns
ns
V
ns
Static drain to source on state
resistance
Body–drain diode reverse recovery
time
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
trr
ID = 1.75 A,
VGS = 10 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 50 V
VGS = 10 V
ID = 3.5 A
VGS = 10 V, ID = 1.75 A
VDD ≈ 30 V
RL = 17.1 
Rg = 4.7 
IF = 3.5 A, VGS = 0 Note4
IF = 3.5 A, VGS = 0
diF/ dt = 100 A/ s
Notes: 4. Pulse test
R07DS1324EJ0700 Rev.7.00
Feb 18, 2016
Page 2 of 10
HAT3019R
Preliminary
• P Channel
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
Min
–100
±20
—
—
–1.0
—
Typ
—
—
—
—
—
240
Max
—
—
±10
–1
–2.5
300
Unit
V
V
A
A
V
m
RDS(on)
—
300
500
m
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
1.8
—
—
—
—
—
—
—
3
930
80
50
16
2.3
3.1
18
—
—
—
—
—
—
—
—
S
pF
pF
pF
nC
nC
nC
ns
tr
—
—
—
—
—
16
43
5.0
–0.83
35
—
—
—
–1.08
—
ns
ns
ns
V
ns
td(off)
tf
VDF
trr
Test Conditions
ID = –10 mA, VGS = 0
IG = ±100A, VDS = 0
VGS = ±16 V, VDS = 0
VDS = –100 V, VGS = 0
VDS = –10 V, I D = –1 mA
ID = –1.15 A,
VGS = –10 V Note4
ID = –1.15 A,
VGS = – 4.5 V Note4
ID = –1.15 A, VDS = –10 V Note4
VDS = –10 V
VGS = 0
f = 1MHz
VDD = –50 V
VGS = –10 V
ID = –2.3 A
VGS = –10 V, ID = –1.15 A
VDD ≈ –30 V
RL = 26 
Rg = 4.7 
IF = –2.3 A, VGS = 0 Note4
IF = –2.3 A, VGS = 0
diF/ dt =100A/µs
Notes: 4. Pulse test
R07DS1324EJ0700 Rev.7.00
Feb 18, 2016
Page 3 of 10
HAT3019R
Preliminary
Main Characteristics N Channel
Typical Transfer Characteristics
Maximum Safe Operation Area
10
10
Drain Current
1
DC
PW
Op
era
tio
0.1
Operation in
this area is
limited by RDS(on)
10
μs
0μ
s
1m
=1 s
0m
s(
1s
n(
PW
ID (A)
5
Drain Current
ID (A)
100
ho
t)
≤ 1Note
0s 5
)
0.01
VDS= 10 V
Pulse Test
4
3
2
25°C
1
Tc = 75°C
Ta = 25°C
–25°C
0.001 1 shot Pulse
0.1
1
10
0
100
Drain to Source Voltage VDS (V)
4
Pulse Test
3.2 V
Drain Current
3
3.0 V
2
2.8 V
1
VGS = 2.6 V
Drain to Source Voltage VDS(on) (mV)
0
2
4
6
8
10
3
5
4
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
VGS = 4.5 V
0.1
10 V
0.01
0.1
10
1
100
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Drain to Source Saturation Voltage vs
Gate to Source Voltage
Forward Transfer Admittance vs.
Drain Current
500
Pulse Test
400
300
200
ID = 2 A
100
1A
0.5 A
0
4
8
12
Gate to Source Voltage
R07DS1324EJ0700 Rev.7.00
Feb 18, 2016
16
20
VGS (V)
Forward Transfer Admittance |yfs| (S)
ID (A)
4.5 V
10 V
Static Drain to Source on State Resistance
RDS(on) (Ω)
5
2
Gate to Source Voltage
Note 5 :
When using the glass epoxy board (FR4 40x40x1.6 mm)
Typical Output Characteristics
1
100
10
Tc = -25°C
25°C
75°C
1
0.1
VDS = 10 V
Pulse Test
0.01
0.01 0.03
0.1
0.3
1
3
10
Drain Current ID (A)
Page 4 of 10
HAT3019R
Preliminary
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10000
di / dt = 100 A / μs
VGS = 0, Ta = 25°C
500
VGS = 0
f = 1 MHz
5000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1000
200
100
50
20
2000
Ciss
1000
500
200
100
Coss
50
20
10
0.1
0.3
1
3
10
Reverse Drain Current
30
10
100
Crss
0
10
VDD = 50 V
25 V
40
8
20
4
VDD = 50 V
25 V
8
12
Gate Charge
16
0
20
Reverse Drain Current IDR (A)
Pulse Test
4
10 V
3
0
5V
VGS = 0, -5 V
0.4
0.8
1.2
Source to Drain Voltage
R07DS1324EJ0700 Rev.7.00
Feb 18, 2016
100
t d(off)
30
tr
t d(on)
10
tf
1
0.1
0.3
1.6
1
3
10
Drain Current
5
1
VGS = 10 V, VDD ≈ 30 V
PW = 5 μs, duty < 1 %
Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage
2
50
3
2.0
VSD (V)
Static Drain to Source on State Resistance
RDS(on) (mΩ)
4
300
Switching Time t (ns)
12
(V)
16
VGS
VGS
80
1000
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
20
ID = 3.5 A
0
0
40
Switching Characteristics
100
VDS
30
Drain to Source Voltage VDS (V)
IDR (A)
Dynamic Input Characteristics
60
20
30
100
ID (A)
Static Drain to Source on State Resistance
vs. Temperature
250
Pulse Test
ID = 0.5 A, 1 A, 2 A
200
150 VGS = 4.5 V
0.5 A, 1 A, 2 A
100
50
0
–25
VGS = 10 V
0
25
50
75
Case Temperature
100 125 150
Tc
(°C)
Page 5 of 10
HAT3019R
Preliminary
Main Characteristics P Channel
Typical Transfer Characteristics
Maximum Safe Operation Area
-5
Drain Current
-1
-0.1
-0.01
ID (A)
-10
10
μ
10
0μ s
PW
1m s
=1
s
DC
0m
Op
s(
1s
era
ho
tio
t)
n(
PW
No
≤
1 0 te 5
Operation in
s)
this area is
limited by RDS(on)
VDS = -10 V
Pulse Test
-4
-3
Drain Current
ID (A)
-100
-2
-1
-0.1
–25°C
-1
-10
-100
0
Drain to Source Voltage VDS (V)
-5
Pulse Test
-10 V
-3.4 V
Drain Current
-3
-3.0 V
-2
-1
VGS = -2.6 V
Drain to Source Voltage VDS(on) (mV)
0
-2
-4
-6
-8
-10
-2
-3
-5
-4
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
10
Pulse Test
1
VGS = –4.5 V
–10 V
0.1
-0.1
-10
-1
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Drain to Source Saturation Voltage vs
Gate to Source Voltage
Forward Transfer Admittance vs.
Drain Current
–1.0
Pulse Test
–0.8
–0.6
ID = –2 A
–0.4
–1 A
–0.2
0
–0.5 A
–4
–8
–12
Gate to Source Voltage
R07DS1324EJ0700 Rev.7.00
Feb 18, 2016
–16
–20
VGS (V)
Forward Transfer Admittance |yfs| (S)
ID (A)
-4.5 V
Static Drain to Source on State Resistance
RDS(on) (Ω)
Typical Output Characteristics
-1
Gate to Source Voltage
Note 5 :
When using the glass epoxy board (FR4 40x40x1.6 mm)
-4
25°C
Tc = 75°C
Ta = 25°C
-0.001 1 shot Pulse
10
1
Tc = -25°C
25°C
75°C
0.1
VDS = -10 V
Pulse Test
0.01
-0.01 -0.03
-0.1
-0.3
-1
-3
-10
Drain Current ID (A)
Page 6 of 10
HAT3019R
Preliminary
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10000
VGS = 0
5000 f = 1 MHz
di / dt = 100 A / μs
VGS = 0, Ta = 25°C
500
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1000
200
100
50
2000
Ciss
1000
500
200
100
Coss
50
20
Crss
20
10
-0.1
-0.3
-1
-3
-10
Reverse Drain Current
-30
10
-100
0
–10
(V)
1000
–4
VGS
300
–8
–12
–80
–16
ID = –2.3 A
–100
0
4
8
Gate Charge
12
16
–20
20
Reverse Drain Current IDR (A)
Pulse Test
–4
–10 V
–5 V
VGS = 0, 5 V
–1
0
–0.4
–0.8
–1.2
Source to Drain Voltage
R07DS1324EJ0700 Rev.7.00
Feb 18, 2016
tr
t d(on)
30
10
tf
3
VGS = -10 V, VDD ≈ -30 V
PW = 5 μs, duty < 1 %
-0.3
–1.6
-1
-3
-10
Drain Current
–5
–2
–50
t d(off)
Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage
–3
100
1
-0.1
–2.0
VSD (V)
Static Drain to Source on State Resistance
RDS(on) (mΩ)
–60
VGS
Switching Time t (ns)
–40
0
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
VDD = –25 V
–50 V
VDD = –50 V
–25 V
–40
Switching Characteristics
0
VDS
–30
Drain to Source Voltage VDS (V)
IDR (A)
Dynamic Input Characteristics
–20
–20
-30
-100
ID (A)
Static Drain to Source on State Resistance
vs. Temperature
1.2
Pulse Test
1.0
0.8
–1 A
ID = –0.2 A, –0.5 A
0.6
0.4
VGS = –4.5 V
–0.2 A, –0.5, -1 A
0.2
–10 V
0
–25
0
25
50
75
Case Temperature
100 125 150
Tc
(°C)
Page 7 of 10
HAT3019R
Preliminary
Common
Power vs. Temperature Derating
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm), (PW ≤ 10 s)
3.0
2
Dr
ive
2.0
O
50
Op
n
0
ive
tio
1.0
Dr
ra
1
pe
Channel Dissipation
Pch (W)
4.0
er
at
ion
100
150
Normalized Transient Thermal Impedance γs (t)
Ambient Temperature
200
Ta (°C)
Normalized Transient Thermal Impedance vs. Pulse Width(1 Drive Operation)
10
1
D=1
0.5
0.2
0.1
0.1
θch - f(t) = γs (t) x θch - f
θch - f = 100°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
0.05
0.02
1
0.0 ulse
tp
o
h
1s
0.01
PDM
D=
PW
T
PW
T
0.001
10 μ
100 μ
1m
10 m
100 m
1
10
100
1000
10000
Normalized Transient Thermal Impedance γs (t)
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width(2 Drive Operation)
10
1
D=1
0.5
0.2
0.1
0.01
0.1
θch - f(t) = γs (t) x θch - f
θch - f = 130°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
0.05
0.02
1
0.0 ulse
tp
o
h
1s
PDM
D=
PW
T
PW
T
0.001
10 μ
100 μ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (s)
R07DS1324EJ0700 Rev.7.00
Feb 18, 2016
Page 8 of 10
HAT3019R
Preliminary
N Channel
Switching Time Test Circuit
Vout
Monitor
Vin Monitor
Rg
Switching Time Waveform
90%
D.U.T.
RL
Vin
VDD
≈ 30 V
Vin
10 V
Vout
10%
10%
90%
td(on)
tr
10%
90%
td(off)
tf
P Channel
Switching Time Test Circuit
Vout
Monitor
Vin Monitor
Rg
Vin
-10 V
Switching Time Waveform
Vin
10%
D.U.T.
RL
90%
Vout
td(on)
R07DS1324EJ0700 Rev.7.00
Feb 18, 2016
90%
90%
V DD
≈ -30 V
10%
10%
tr
td(off)
tf
Page 9 of 10
HAT3019R
Preliminary
Package Dimensions
JEITA Package Code
P-SOP8-3.95 × 4.9-1.27
RENESAS Code
PRSP0008DD-D
Previous Code
FP-8DAV
MASS[Typ.]
0.085g
F
Package Name
SOP-8
*1 D
bp
1
c
*2 E
Index mark
HE
5
8
4
Z
Terminal cross section
(Ni/Pd/Au plating)
* 3 bp
x M
e
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
Reference Dimension in Millimeters
Symbol
Min
A1
A
L1
L
y
Detail F
D
E
A2
A1
A
bp
b1
c
c1
HE
e
x
y
Z
L
L1
Nom Max
4.90 5.3
3.95
0.10 0.14 0.25
1.75
0.34 0.40 0.46
0.15 0.20
0.25
0°
8°
5.80 6.10 6.20
1.27
0.25
0.1
0.75
0.40 0.60 1.27
1.08
Ordering Information
Orderable Part Number
HAT3019R-EL-E
R07DS1324EJ0700 Rev.7.00
Feb 18, 2016
Quantity
2500 pcs
Shipping Container
Taping
Page 10 of 10
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12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1)
"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2)
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
http://www.renesas.com
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2801 Scott Boulevard Santa Clara, CA 95050-2549, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
9251 Yonge Street, Suite 8309 Richmond Hill, Ontario Canada L4C 9T3
Tel: +1-905-237-2004
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-6503-0, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
Room 1709, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100191, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 301, Tower A, Central Towers, 555 Langao Road, Putuo District, Shanghai, P. R. China 200333
Tel: +86-21-2226-0888, Fax: +86-21-2226-0999
Renesas Electronics Hong Kong Limited
Unit 1601-1611, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2265-6688, Fax: +852 2886-9022
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei 10543, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre, Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 1207, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics India Pvt. Ltd.
No.777C, 100 Feet Road, HAL II Stage, Indiranagar, Bangalore, India
Tel: +91-80-67208700, Fax: +91-80-67208777
Renesas Electronics Korea Co., Ltd.
12F., 234 Teheran-ro, Gangnam-Gu, Seoul, 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
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