Renesas FS10ASJ-03 Mitsubishi nch power mosfet high-speed switching use Datasheet

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Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
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have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI Nch POWER MOSFET
FS10ASJ-03
HIGH-SPEED SWITCHING USE
FS10ASJ-03
OUTLINE DRAWING
Dimensions in mm
1.0
2.3
2.3
10MAX.
2.3MIN.
1.0MAX.
5.5 ± 0.2
r
A
0.5 ± 0.2
0.8
2.3
0.9MAX.
0.5 ± 0.1
1.5 ± 0.2
6.5
5.0 ± 0.2
q
w
e
wr
¡4V DRIVE
¡VDSS ................................................................................. 30V
¡rDS (ON) (MAX) ............................................................. 75mΩ
¡ID ........................................................................................ 10A
¡Integrated Fast Recovery Diode (TYP.) ............ 35ns
q GATE
w DRAIN
e SOURCE
r DRAIN
q
e
MP-3
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS
Symbol
(Tc = 25°C)
Ratings
Unit
VDSS
Drain-source voltage
VGS = 0V
30
V
VGSS
ID
Gate-source voltage
Drain current
VDS = 0V
±20
10
V
A
IDM
IDA
Drain current (Pulsed)
Avalanche drain current (Pulsed)
40
10
A
A
IS
ISM
Source current
Source current (Pulsed)
10
40
A
A
PD
Tch
Maximum power dissipation
Channel temperature
20
–55 ~ +150
W
°C
–55 ~ +150
°C
0.26
g
Tstg
—
Parameter
Conditions
L = 30µH
Storage temperature
Weight
Typical value
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10ASJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Symbol
Parameter
V (BR) DSS
IGSS
Drain-source breakdown voltage
Gate-source leakage current
IDSS
VGS (th)
Drain-source leakage current
Gate-source threshold voltage
rDS (ON)
Drain-source on-state resistance
rDS (ON)
VDS (ON)
Drain-source on-state resistance
Drain-source on-state voltage
y fs
Ciss
Forward transfer admittance
Input capacitance
Coss
Crss
Output capacitance
Reverse transfer capacitance
td (on)
tr
Turn-on delay time
Rise time
td (off)
Turn-off delay time
tf
VSD
Fall time
Source-drain voltage
Rth (ch-c)
trr
Thermal resistance
Reverse recovery time
Limits
Test conditions
Typ.
Max.
30
—
—
—
—
±0.1
V
µA
—
1.0
—
1.5
0.1
2.0
mA
V
—
58
75
mΩ
—
—
90
0.29
150
0.375
mΩ
V
—
—
7.5
360
—
—
S
pF
—
—
160
55
—
—
pF
pF
—
—
11
25
—
—
ns
ns
—
35
—
ns
—
—
23
1.0
—
1.5
ns
V
—
—
—
35
6.25
—
°C/W
ns
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
Unit
Min.
ID = 5A, V GS = 4V
ID = 5A, V GS = 10V
ID = 5A, V DS = 5V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 15V, I D = 5A, V GS = 10V, RGEN = RGS = 50Ω
IS = 5A, VGS = 0V
Channel to case
IS = 5A, dis/dt = –50A/µs
PERFORMANCE CURVES
DRAIN CURRENT ID (A)
32
24
16
8
0
0
DRAIN CURRENT ID (A)
20
50
100
150
100ms
1ms
100
7
5
3
2
DC
TC = 25°C
Single Pulse
10ms
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
Tc = 25°C
Pulse Test
8V
6V
4V
12
PD = 20W
8
3V
4
0.4
0.8
1.2
1.6
6V
10
5V
VGS = 10V
0
tw = 10ms
101
7
5
3
2
10–1
7
5
200
16
0
MAXIMUM SAFE OPERATING AREA
5
3
2
2.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE
40
8V
Tc = 25°C
Pulse Test
8
5V
4V
VGS = 10V
6
3V
4
2.5V
2
0
0
0.2
0.4
0.6
0.8
1.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10ASJ-03
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
1.2
ID = 15A
0.8
10A
0.4
5A
0
2
4
6
8
60
10V
40
20
TRANSFER CHARACTERISTICS
(TYPICAL)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
Tc = 25°C
VDS = 10V
Pulse Test
FORWARD TRANSFER
ADMITTANCE yfs (S)
16
8
102
7
5
4
3
VDS = 5V
Pulse Test
2
TC = 25°C 75°C
101
7
5
4
3
125°C
2
0
2
4
6
8
100 0
10
10
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
Tch = 25°C
f = 1MHZ
VGS = 0V
104
7
5
3
2
103
102
7
5
3
2
80
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
10
24
7
5
3
2
VGS = 4V
DRAIN CURRENT ID (A)
32
0
Tc = 25°C
Pulse Test
GATE-SOURCE VOLTAGE VGS (V)
40
DRAIN CURRENT ID (A)
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (mΩ)
1.6
0
CAPACITANCE
Ciss, Coss, Crss (pF)
100
Tc = 25°C
Pulse Test
Ciss
Coss
Crss
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
SWITCHING TIME (ns)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
2.0
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
102
7
5
4
3
2
td(off)
tf
tr
101
7
5
4
3
td(on)
Tch = 25°C
VDD = 15V
VGS = 10V
RGEN = RGS = 50Ω
2
100 0
10
2 3 4 5 7 101
2 3 4 5 7 102
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10ASJ-03
HIGH-SPEED SWITCHING USE
10
SOURCE CURRENT IS (A)
6
VDS = 10V
4
20V
25V
2
0
4
8
12
16
24
16
8
0
0
0.4
0.8
1.2
1.6
2.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
4.0
2
100
7
5
4
3
2
–50
0
50
100
VDS = 10V
ID = 1mA
3.2
2.4
1.6
0.8
0
150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
TC = 125°C
75°C
25°C
GATE CHARGE Qg (nC)
101
7 VGS = 10V
ID = 1/2ID
5 Pulse Test
4
3
10–1
VGS = 0V
Pulse Test
32
20
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
40
Tch = 25°C
ID = 10A
8
0
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
GATE-SOURCE VOLTAGE VGS (V)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
D = 1.0
0.5
0.2
PDM
0.1
0.05
0.02
0.01
Single Pulse
tw
T
D= tw
T
10–1 –4
10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
PULSE WIDTH tw (s)
Feb.1999
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