MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G Schottky Power Rectifier www.onsemi.com Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. These state-of-the-art devices have the following features: SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 90, 100 VOLTS Features • • • • • • • • • Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction High Blocking Voltage − 100 Volts 175°C Operating Junction Temperature Guardring for Stress Protection AEC−Q101 Qualified and PPAP Capable SBRS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements All Packages are Pb−Free Mechanical Characteristics • Case: Epoxy, Molded • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped in 12 mm Tape and Reel, 2,500 units per reel Cathode Polarity Band © Semiconductor Components Industries, LLC, 2015 June, 2015 − Rev. 11 1 SMB CASE 403A MARKING DIAGRAM AYWW B1xG G B1 x = Device Code = C for MBRS1100T3 9 for MBRS190T3 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Publication Order Number: MBRS1100T3/D MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBRS190T3 MBRS1100T3 VRRM VRWM VR Average Rectified Forward Current TL = 163°C TL = 148°C IF(AV) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Operating Junction Temperature (Note 1) Voltage Rate of Change Value Unit V 90 100 A 1.0 2.0 A 50 TJ −65 to +175 °C dv/dt 10 V/ns Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Thermal Resistance − Junction−to−Lead (TL = 25°C) Symbol Value Unit RqJL 22 °C/W ELECTRICAL CHARACTERISTICS Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) (iF = 1.0 A, TJ = 25°C) Characteristic VF 0.75 V Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 100°C) IR mA 0.5 5.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. ORDERING INFORMATION Marking Package Shipping† MBRS1100T3G B1C SMB (Pb−Free) 2500 / Tape & Reel SBRS81100T3G B1C SMB (Pb−Free) 2500 / Tape & Reel MBRS190T3G B19 SMB (Pb−Free) 2500 / Tape & Reel SBRS8190T3G B19 SMB (Pb−Free) 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G 1k 400 200 100 40 20 10 4 2 1 0.4 0.2 0.1 0.04 0.02 0.01 20 10 TJ = 150°C 5 2 100°C 1 0.5 25°C 0.2 0.1 0.05 0.02 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 TJ = 150°C I R , REVERSE CURRENT ( μA) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL ELECTRICAL CHARACTERISTICS 1 1.1 1.2 1.3 125°C 100°C 25°C 0 10 20 30 40 50 60 70 80 vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current* 90 100 I F(AV) , AVERAGE FORWARD CURRENT (AMPS) 3.2 2.8 TJ = 100°C 2.4 2.0 SQUARE WAVE 1.6 DC 1.2 0.8 0.4 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2.0 DC 1.5 1.0 SQUARE WAVE 0.5 0 145 150 155 160 165 170 IF(AV), AVERAGE FORWARD CURRENT (AMPS) TL, LEAD TEMPERATURE (°C) Figure 3. Power Dissipation Figure 4. Current Derating, Lead C, CAPACITANCE (pF) PF(AV), AVERAGE POWER DISSIPATION (WATTS) *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these curves if VR is sufficient below rated VR. 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 NOTE: TYPICAL CAPACITANCE NOTE: AT 0 V = 270 pF 0.1 0.2 0.5 1 2 5 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Typical Capacitance www.onsemi.com 3 50 100 175 180 MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE J HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED MIN 1.95 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.30 2.47 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.077 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.091 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.097 0.008 0.087 0.012 0.156 0.181 0.220 0.063 A L L1 A1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 4 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MBRS1100T3/D