NSR05F40NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. http://onsemi.com Features • • • • • • • Low Forward Voltage Drop − 420 mV @ 500 mA Low Reverse Current − 15 mA @ 10 V VR 500 mA of Continuous Forward Current ESD Rating − Human Body Model: Class 3B ESD Rating − Machine Model: Class C High Switching Speed NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • • • • • LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping and Protection 1 CATHODE MARKING DIAGRAM PIN 1 1 DSN2 (0402) CASE 152AC ORDERING INFORMATION Mobile Handsets MP3 Players Digital Camera and Camcorders Notebook PCs & PDAs GPS Symbol Value Unit Reverse Voltage VR 40 V Forward Current (DC) IF 500 mA IFSM (60 Hz @ 1 cycle) Shipping† NSR05F40NXT5G DSN2 5000 / Tape & Reel (Pb−Free) NSVR05F40NXT5G DSN2 5000 / Tape & Reel (Pb−Free) A 10 Repetitive Peak Forward Current (Pulse Wave = 1 sec, Duty Cycle = 66%) IFRM 4.0 A ESD Rating: ESD >8 > 400 kV V Human Body Model Machine Model Package †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MAXIMUM RATINGS Forward Surge Current 05F40 YYY = Specific Device Code = Year Code Device Rating 2 ANODE 2 05F40 YYY Markets • • • • • 40 V SCHOTTKY BARRIER DIODE Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2014 September, 2014 − Rev. 6 1 Publication Order Number: NSR05F40/D NSR05F40NXT5G THERMAL CHARACTERISTICS Characteristic Max Unit RqJA PD 240 521 °C/W mW Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C RqJA PD 94 1.3 °C/W W Storage Temperature Range Tstg −40 to +125 °C Junction Operating Temperature Range TJ −40 to +150 °C Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Symbol Min Typ 1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Reverse Leakage (VR = 10 V) (VR = 40 V) IR Forward Voltage (IF = 100 mA) (IF = 500 mA) VF Total Capacitance (VR = 1 V, f = 1 MHz) (VR = 10 V, f = 1 MHz) CT Min Typ Max Unit mA 15 75 V 0.340 0.420 0.360 0.460 70 27 80 35 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. http://onsemi.com 2 NSR05F40NXT5G TYPICAL CHARACTERISTICS 100000 1 0.1 125°C 0.01 0.001 Ir, REVERSE CURRENT (mA) 150°C 75°C 25°C −25°C 1000 125°C 100 75°C 10 25°C 1 −25°C 0.1 0.01 0.001 0 0.10 0.20 0.30 0.50 0.40 0 0.60 5 10 15 20 25 30 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Forward Voltage Figure 2. Leakage Current 120 TA = 25°C CT, TOTAL CAPACITANCE (pF) IF, FORWARD CURRENT (A) 150°C 10000 100 80 60 40 20 0 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (V) Figure 3. Total Capacitance http://onsemi.com 3 35 40 35 40 NSR05F40NXT5G PACKAGE DIMENSIONS DSN2, 1.0x0.6, 0.575P, (0402) CASE 152AC ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 0.05 C A B D DIM A A1 b D E L L2 L3 E 0.05 C TOP VIEW 0.05 C MILLIMETERS MIN MAX 0.25 0.31 −−− 0.05 0.45 0.55 1.00 BSC 0.60 BSC 0.85 0.95 0.35 0.45 0.20 0.30 A CATHODE BAND MONTH CODING 0.05 C A1 C SEATING PLANE SIDE VIEW DEC NOV OCT SEP 0.05 C A B XXXX YYY JUN L L/2 1 MAR FEB JAN b 0.05 C A B L2 XXXX Y09 L3 BOTTOM VIEW RECOMMENDED SOLDER FOOTPRINT* 1.20 DEVICE CODE YEAR CODE (EXAMPLE) INDICATES AUG 2009 0.47 PIN 1 0.60 0.60 DIMENSIONS: MILLIMETERS See Application Note AND8464/D for more mounting details *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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