Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 4, 8/2008 RF Power Field Effect Transistors MRF6S9060NR1 MRF6S9060NBR1 N - Channel Enhancement - Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pout = 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 21.4 dB Drain Efficiency — 32.1% ACPR @ 750 kHz Offset — - 47.6 dBc in 30 kHz Bandwidth GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 21 Watts Avg., Full Frequency Band (921 - 960 MHz) Power Gain — 20 dB Drain Efficiency — 46% Spectral Regrowth @ 400 kHz Offset = - 62 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM — 1.5% rms GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 60 Watts, Full Frequency Band (921 - 960 MHz) Power Gain — 20 dB Drain Efficiency — 63% • Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 60 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Integrated ESD Protection • 225°C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. • TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. 880 MHz, 14 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1265- 09, STYLE 1 TO - 270 - 2 PLASTIC MRF6S9060NR1 CASE 1337 - 04, STYLE 1 TO - 272 - 2 PLASTIC MRF6S9060NBR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +68 Vdc Gate - Source Voltage VGS - 0.5, + 12 Vdc Storage Temperature Range Tstg - 65 to +150 °C TC 150 °C TJ 225 °C Case Operating Temperature Operating Junction Temperature (1,2) 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details. MRF6S9060NBR1 no longer manufactured. MRF6S9060NR1 MRF6S9060NBR1 1 Table 2. Thermal Characteristics Value (1,2) Symbol Thermal Resistance, Junction to Case Case Temperature 80°C, 60 W CW Case Temperature 80°C, 14 W CW RθJC Unit °C/W 0.77 0.88 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1A (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C LIFETIME BUY Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μA) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 450 mAdc, Measured in Functional Test) VGS(Q) — 2.9 — Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.5 Adc) VDS(on) — 0.18 0.4 Vdc Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 33 — pF Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.4 — pF Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 106 — pF Characteristic Off Characteristics On Characteristics Dynamic Characteristics Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, Pout = 14 W Avg., f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain Gps 20.5 21.4 23.5 dB Drain Efficiency ηD 30.5 32.1 — % ACPR — - 47.6 - 45 dBc IRL — - 15.3 -9 dB Adjacent Channel Power Ratio Input Return Loss 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 Characteristic (continued) MRF6S9060NR1 MRF6S9060NBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921 - 960 MHz, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 21 W Avg., f = 921 - 960 MHz, GSM EDGE Signal Power Gain Gps — 20 — dB Drain Efficiency ηD — 46 — % Error Vector Magnitude EVM — 1.5 — % Spectral Regrowth at 400 kHz Offset SR1 — - 62 — dBc Spectral Regrowth at 600 kHz Offset SR2 — - 78 — dBc Typical CW Performances (In Freescale GSM Test Fixture Optimized for 921 - 960 MHz, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 60 W, f = 921 - 960 MHz Power Gain Gps — 20 — dB Drain Efficiency ηD — 63 — % IRL — - 12 — dB P1dB — 67 — W LIFETIME BUY Input Return Loss Pout @ 1 dB Compression Point (f = 940 MHz) LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 Characteristic MRF6S9060NR1 MRF6S9060NBR1 RF Device Data Freescale Semiconductor 3 B2 R1 VBIAS + + C9 RF INPUT C15 R3 R2 C7 C8 Z2 Z3 Z4 Z5 L1 Z6 Z7 Z8 + + C16 C17 C19 Z11 Z12 Z13 C10 C12 C13 VSUPPLY C18 RF Z15 OUTPUT Z14 C6 Z9 C1 C14 DUT C2 LIFETIME BUY + C11 L2 Z10 Z1 R4 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 0.215″ 0.221″ 0.500″ 0.460″ 0.040″ 0.280″ 0.087″ 0.435″ x 0.065″ x 0.065″ x 0.100″ x 0.270″ x 0.270″ x 0.270″ x 0.525″ x 0.525″ C3 C4 C5 Microstrip Microstrip Microstrip Microstrip Microstrip x 0.530″ Taper Microstrip Microstrip Z9 Z10 Z11 Z12 Z13 Z14 Z15 PCB 0.057″ x 0.525″ Microstrip 0.360″ x 0.270″ Microstrip 0.063″ x 0.270″ Microstrip 0.360″ x 0.065″ Microstrip 0.170″ x 0.065″ Microstrip 0.880″ x 0.065″ Microstrip 0.260″ x 0.065″ Microstrip Taconic RF - 35 0.030″, εr = 3.5 Figure 1. MRF6S9060NR1(NBR1) Test Circuit Schematic Table 6. MRF6S9060NR1(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Ferrite Bead 2743019447 Fair - Rite B2 Ferrite Bead 2743021447 Fair - Rite C1, C8, C14, C15 47 pF Chip Capacitors ATC100B470JT500XT ATC C2, C4, C13 0.8 - 8.0 pF Variable Capacitors, Gigatrim 27290 Johanson C3 3.0 pF Chip Capacitor ATC100B3R0JT500XT ATC C5, C6 15 pF Chip Capacitors ATC100B150JT500XT ATC C7, C16, C17 10 μF, 35 V Tantalum Capacitors T491D106K035AT Kemet C9 100 μF, 50 V Electrolytic Capacitor MCHT101M1HB - 1017 - RH Multicomp C10, C11 13 pF Chip Capacitors ATC100B130JT500XT ATC C12 3.9 pF Chip Capacitor ATC100B3R9JT500XT ATC C18 0.56 μF Chip Capacitor ATC700A561MT150XT ATC C19 470 μF, 63 V Electrolytic Capacitor 477KXM063M Illinois Capacitor L1, L2 12.5 nH Inductor A04T - 5 Coilcraft R1 1 kΩ, 1/4 W Chip Resistor CRCW12061001FKEA Vishay R2 560 kΩ, 1/4 W Chip Resistor CRCW12065600FKEA Vishay R3 12 Ω, 1/4 W Chip Resistor CRCW120612R0FKEA Vishay R4 27 W, 1/4 W Chip Resistor CRCW120627R0FKEA Vishay LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 B1 MRF6S9060NR1 MRF6S9060NBR1 4 RF Device Data Freescale Semiconductor VGG R2 R1 C19 B1 R3 C8 C15 C9 C2 C3 C5 R4 C18 L2 CUT OUT AREA C6 L1 C1 VDD C16 C17 B2 C11 C10 C12 C13 C14 LIFETIME BUY C4 TO−270/272 Surface / Bolt down Figure 2. MRF6S9060NR1(NBR1) Test Circuit Component Layout LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 C7 MRF6S9060NR1 MRF6S9060NBR1 RF Device Data Freescale Semiconductor 5 35 ηD 30 21.6 Gps −45 ACPR 21.2 −50 IRL 21 −55 −60 20.8 ALT1 −65 920 20.6 840 850 860 870 880 890 900 910 −8 ACPR (dBc), ALT1 (dBc) 21.4 −12 −16 −20 −24 48 ηD 46 44 21 20.8 −32 ACPR 20.6 −40 20.4 IRL −48 ALT1 20 840 850 860 870 880 890 900 910 −56 −64 920 ACPR (dBc), ALT1 (dBc) Gps −4 −8 −12 −16 −20 IRL, INPUT RETURN LOSS (dB) VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 450 mA 21.4 N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 21.2 20.2 f, FREQUENCY (MHz) Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 28 Watts Avg. 23 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) −10 IDQ = 675 mA 22 Gps, POWER GAIN (dB) 50 21.6 ηD, DRAIN EFFICIENCY (%) Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 14 Watts Avg. Gps, POWER GAIN (dB) LIFETIME BUY f, FREQUENCY (MHz) 550 mA 450 mA 21 350 mA 20 225 mA 19 18 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements −20 −30 IDQ = 225 mA −40 350 mA −50 450 mA 550 mA 675 mA −60 17 1 10 100 300 1 10 100 LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 21.8 Gps, POWER GAIN (dB) 40 VDD = 28 Vdc, Pout = 14 W (Avg.), IDQ = 450 mA N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 IRL, INPUT RETURN LOSS (dB) 22 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS 300 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S9060NR1 MRF6S9060NBR1 6 RF Device Data Freescale Semiconductor −30 −40 3rd Order −60 5th Order −70 7th Order −80 10 100 300 VDD = 28 Vdc, Pout = 60 W (PEP) IDQ = 450 mA, Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz −10 −20 −30 3rd Order −40 5th Order −50 −60 7th Order −70 0.05 0.1 1 10 100 300 Pout, OUTPUT POWER (WATTS) PEP TWO−TONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Intermodulation Distortion Products versus Tone Spacing 56 55 54 Ideal P3dB = 50 dBm (150 W) 53 52 51 50 49 P1dB = 49.1 dBm (100 W) Actual 48 47 VDD = 28 Vdc, IDQ = 450 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 880 MHz 46 45 44 22 23 24 25 26 27 28 29 30 31 32 33 34 Pin, INPUT POWER (dBm) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) Figure 9. Pulsed CW Output Power versus Input Power 55 −25 ηD VDD = 28 Vdc, IDQ = 450 mA f = 880 MHz, N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 45 ALT1 85_C −45 −30_C 25_C ACPR −55 35 25 Gps 15 TC = 25_C −35 25_C 85_C −65 −30_C 25_C 5 −5 −75 −85 1 10 Pout, OUTPUT POWER (WATTS) AVG. ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc) −50 0 LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 VDD = 28 Vdc, IDQ = 450 mA, f1 = 880 MHz −20 f2 = 880.1 MHz, Two−Tone Measurements 1 LIFETIME BUY IMD, INTERMODULATION DISTORTION (dBc) −10 Pout, OUTPUT POWER (dBm) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power MRF6S9060NR1 MRF6S9060NBR1 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS 22 25_C 25_C 60 85_C 50 20.5 85_C 20 40 19.5 30 19 20 ηD 18.5 VDD = 28 Vdc IDQ = 450 mA f = 880 MHz 18 1 10 0 10 100 Figure 11. Power Gain and Drain Efficiency versus CW Output Power Gps, POWER GAIN (dB) 22 21 20 19 18 17 28 V 32 V VDD = 24 V 16 15 14 13 12 11 10 IDQ = 450 mA f = 880 MHz 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 Pout, OUTPUT POWER (WATTS) CW Figure 12. Power Gain versus Output Power 108 MTTF (HOURS) LIFETIME BUY Pout, OUTPUT POWER (WATTS) CW 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 14 W Avg., and ηD = 32.1%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 21 70 Gps ηD, DRAIN EFFICIENCY (%) TC = −30_C 21.5 Gps, POWER GAIN (dB) 80 −30_C Figure 13. MTTF Factor versus Junction Temperature MRF6S9060NR1 MRF6S9060NBR1 8 RF Device Data Freescale Semiconductor 100 −10 −20 −30 1 −40 −50 0.1 (dB) PROBABILITY (%) 10 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 −60 −70 −80 −90 0.0001 0 2 4 6 8 10 1.2288 MHz Channel BW .. .................................................. . . . . ............ .. .. .. .. .. .. . .. ... . .. . −ALT1 in 30 kHz +ALT1 in 30 kHz . .. . Integrated BW Integrated BW .................. ......... .......... ..... .......... . . ................ ...... ... .. . . . . . . . .............. ................. ......... ........... ... ...... ...... ......... .......... . . . . . . . . . ......... ...... . . . ....... −ACPR in 30 kHz +ACPR in 30 kHz .................. . . . . .. .... . . ............ ....... ............... . ........ . ................ ... . . . . . Integrated BW Integrated BW ........ ...... ........... ...... ... .......... ........... −100 LIFETIME BUY PEAK−TO−AVERAGE (dB) Figure 14. Single - Carrier CCDF N - CDMA −110 −3.6 −2.9 −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 f, FREQUENCY (MHz) Figure 15. Single - Carrier N - CDMA Spectrum 3.6 LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 N - CDMA TEST SIGNAL MRF6S9060NR1 MRF6S9060NBR1 RF Device Data Freescale Semiconductor 9 f = 910 MHz f = 910 MHz Zload Zsource f = 850 MHz f = 850 MHz VDD = 28 Vdc, IDQ = 450 mA, Pout = 14 W Avg. f MHz Zsource Ω Zload Ω 850 0.44 - j0.20 2.28 + j0.23 865 0.44 - j0.07 2.18 + j0.33 880 0.45 + j0.50 2.20 + j0.47 895 0.48 + j0.18 2.15 + j0.61 910 0.52 + j0.29 2.00 + j0.68 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 LIFETIME BUY Zo = 5 Ω Figure 16. Series Equivalent Source and Load Impedance MRF6S9060NR1 MRF6S9060NBR1 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF6S9060NR1 MRF6S9060NBR1 RF Device Data Freescale Semiconductor 11 MRF6S9060NR1 MRF6S9060NBR1 12 RF Device Data Freescale Semiconductor MRF6S9060NR1 MRF6S9060NBR1 RF Device Data Freescale Semiconductor 13 MRF6S9060NR1 MRF6S9060NBR1 14 RF Device Data Freescale Semiconductor MRF6S9060NR1 MRF6S9060NBR1 RF Device Data Freescale Semiconductor 15 MRF6S9060NR1 MRF6S9060NBR1 16 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 4 Aug. 2008 Description • Listed replacement part and Device Migration notification reference number, p. 1 • Listed MRF6S9060NBR1 as no longer manufactured, p. 1 • Replaced Case Outline 1265 - 08 with 1265 - 09, Issue K, p. 1, 11 - 13. Corrected cross hatch pattern in bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added JEDEC Standard Package Number. • Replaced Case Outline 1337 - 03 with 1337 - 04, p. 1, 14 - 16. Issue D: Removed Drain - ID label from View Y - Y on Sheet 2. Renamed E2 to E3. Added cross - hatch region dimensions D2 and E2. Added JEDEC Standard Package Number. Issue E: Corrected document number 98ASA99191D on Sheet 3. • Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 • Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C in Capable Plastic Package bullet, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in Functional Test”, On Characteristics table, p. 2 • Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 • Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection, Dynamic Characteristics table, p. 2 • Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part numbers, p. 4 • Removed lower voltage tests from Fig. 12, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 8 • Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 8 • Added Product Documentation and Revision History, p. 17 MRF6S9060NR1 MRF6S9060NBR1 RF Device Data Freescale Semiconductor 17 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2005-2006, 2008. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MRF6S9060NR1 MRF6S9060NBR1 Document Number: MRF6S9060N Rev. 4, 8/2008 18 RF Device Data Freescale Semiconductor