MITSUBISHI Nch POWER MOSFET FK10UM-10 HIGH-SPEED SWITCHING USE FK10UM-10 OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 r 1.0 3.8MAX. 0.8 2.54 0.5 2.54 2.6 4.5MAX. 12.5MIN. φ 3.6 q w e wr ¡VDSS ................................................................................ 500V ¡rDS (ON) (MAX) .............................................................. 1.13Ω ¡ID ......................................................................................... 10A ¡Integrated Fast Recovery Diode (MAX.) ........150ns q GATE w DRAIN e SOURCE r DRAIN q e TO-220 APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Conditions VGS = 0V VDS = 0V Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value Ratings 500 ±30 10 30 Unit V V A A 10 30 125 –55 ~ +150 A A W °C –55 ~ +150 2.0 °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FK10UM-10 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current V (BR) GSS IGSS IDSS VGS (th) rDS (ON) Gate-source threshold voltage Drain-source on-state resistance VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf Turn-off delay time Fall time Source-drain voltage VSD Rth (ch-c) Unit Min. Typ. Max. ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V 500 ±30 — — — — — — ±10 V V µA VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V — 2 — — — 3 0.88 4.40 1 4 1.13 5.65 mA V Ω V 3.3 — — — 5.5 1100 130 20 — — — — S pF pF pF — — — — 20 30 95 35 — — — — ns ns ns ns — 1.5 2.0 V — — — — 1.0 150 °C/W ns VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω IS = 5A, VGS = 0V Channel to case Thermal resistance Reverse recovery time trr Limits Test conditions IS = 10A, dis/dt = –100A/µs PERFORMANCE CURVES MAXIMUM SAFE OPERATING AREA 5 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 200 160 120 80 40 0 50 100 150 CASE TEMPERATURE TC (°C) 200 100µs 7 5 3 2 1ms 100 7 5 3 2 10–1 0 tw=10µs 101 10ms TC = 25°C Single Pulse DC 7 5 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FK10UM-10 HIGH-SPEED SWITCHING USE OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V 20 OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V 6V PD = 125W 10 TC = 25°C Pulse Test 12 8 5V PD= 125W 4 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 6V 16 8 6 5V 4 TC = 25°C Pulse Test 2 4V 0 0 10 20 30 40 0 50 16 20 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 2.0 32 ID = 20A 24 16 10A 8 5A 0 4 8 12 16 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 12 ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 1.6 VGS = 10V 20V 1.2 0.8 0.4 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 7 5 16 FORWARD TRANSFER ADMITTANCE yfs (S) TC = 25°C VDS = 50V Pulse Test 12 8 4 0 TC = 25°C Pulse Test 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 20 DRAIN CURRENT ID (A) 8 DRAIN-SOURCE VOLTAGE VDS (V) TC = 25°C Pulse Test 0 4 DRAIN-SOURCE VOLTAGE VDS (V) 40 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) VDS = 10V Pulse Test TC=25°C 75°C 3 2 125°C 100 7 5 3 2 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FK10UM-10 HIGH-SPEED SWITCHING USE CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 Ciss 103 7 5 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 2 3 2 Coss 102 7 5 3 2 Crss DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) td(off) 3 2 tr td(on) tf 5 7 100 2 3 GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 SOURCE CURRENT IS (A) 16 VDS = 100V 200V 12 400V 8 4 0 101 7 5 5 7 101 2 3 DRAIN CURRENT ID (A) Tch = 25°C ID = 10A 20 40 60 80 VGS = 0V Pulse Test 32 TC=125°C 24 25°C 16 75°C 8 0 100 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 3 2 100 7 5 3 2 10–1 102 7 5 DRAIN-SOURCE VOLTAGE VDS (V) 20 0 3 2 101 10–1 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) GATE-SOURCE VOLTAGE VGS (V) 101 Tch = 25°C 7 f = 1MHz 5 VGS = 0V 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω 0 50 100 150 200 250 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) Feb.1999 MITSUBISHI Nch POWER MOSFET FK10UM-10 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) 101 7 5 3 2 3 2 Irr 101 7 5 101 2 3 5 7 102 0 Tch = 25°C 10 Tch = 150°C 7 5 2 3 5 7 103 SOURCE CURRENT dis/dt (–A/µs) 3 2 3 2 102 7 5 101 7 5 trr Irr 3 2 Tch = 25°C Tch = 150°C 101 0 10 2 3 5 7 101 2 3 3 2 100 5 7 102 SOURCE CURRENT IS (A) DIODE REVERSE VS. SOURCE CURRENT dis/dt CHARACTERISTIC (TYPICAL) 5 5 IS = 10A VGS = 0V 3 3 VDD = 250V 2 2 trr 102 7 5 DIODE REVERSE VS. SOURCE CURRENT CHARACTERISTIC (TYPICAL) 102 103 dis/dt = –100A/µs 7 7 VGS = 0V 5 5 VDD = 250V REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) 1.4 REVERSE RECOVERY CURRENT Irr (A) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W) REVERSE RECOVERY TIME trr (ns) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) HIGH-SPEED SWITCHING USE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 5 3 2 D=1 0.5 0.2 0.1 PDM 10–1 7 5 3 2 tw 0.05 0.02 0.01 T D= tw T Single Pulse 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999