EMF17 / UMF17N Transistors Power management (dual transistors) EMF17 / UMF17N 2SA1774 and DTC123EE are housed independently in a EMT or UMT package. zExternal dimensions (Unit : mm) zApplication Power management circuit zFeatures 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. (3) (4) (5) (2) (6) 0.5 0.5 1.0 1.6 0.22 EMF17 (1) 0.5 0.13 1.2 1.6 Each lead has same dimensions ROHM : EMT6 zStructure Silicon epitaxial planar transistor Abbreviated symbol : F17 (1) Tr1 R1 1.3 0.7 0.1Min. 0to0.1 DTr2 0.9 2.1 0.15 (2) 0.65 (1) 1.25 (3) 2.0 (3) (2) (4) (6) (5) 0.2 zEquivalent circuits 0.65 UMF17N Each lead has same dimensions R2 (4) (5) ROHM : UMT6 EIAJ : SC-88 (6) Abbreviated symbol :F17 R1=2.2kΩ R2=2.2kΩ zPackage, marking, and packaging specifications Type EMF17 UMF17N Package EMT6 UMT6 Marking F17 F17 Code T2R TR Basic ordering unit(pieces) 8000 3000 Rev.A 1/4 EMF17 / UMF17N Transistors zAbsolute maximum ratings (Ta=25°C) Tr1 Symbol Limits Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −6 V Collector current IC −150 mA Collector power dissipation PC 150 (TOTAL) mW Parameter Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗ ∗ 120mW per element must not be exceeded. DTr2 Parameter Supply voltage Input voltage Collector current Output current Power dissipation Junction temperature Range of storage temperature Limits Symbol 50 VCC VIN −10 to +20 IC 100 100 IO PC 150(TOTAL) Tj 150 Tstg −55 to +150 Unit V V mA mA mW °C °C ∗1 ∗2 ∗1 Characteristics of built-in transistor. ∗2 Each terminal mounted on a recommended land. zElectrical characteristics (Ta=25°C) Tr1 Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO −60 − − V IC = −50µA Collector-emitter breakdown voltage BVCEO −50 − − V IC = −1mA Emitter-base breakdown voltage BVEBO −6 − − V IE = −50µA Collector cutoff current ICBO − − −0.1 µA VCB = −60V Emitter cutoff current IEBO − − −0.1 µA VEB = −6V VCE(sat) − − −0.5 V IC/IB = −50mA/−5mA hFE 180 − 390 − VCE = −6V, IC = −1mA fT − 140 − MHz Cob − 4 5 pF Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Conditions VCE = −12V, IE = 2mA, f = 100MHz VCB = −12V, IE = 0A, f = 1MHz DTr2 Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio Symbol VI(off) VI(on) VO(on) II IO(off) GI Min. − 3.0 − − − 20 Typ. − − 100 − − − Max. 0.5 − 300 3.8 0.5 − Unit V V mV mA µA − Conditions VCC=5V, IO=100µA VO=0.3V, IO=20mA VO=10mA, II=0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=20mA fT R1 R2/R1 − 1.54 0.8 250 2.2 1.0 − 2.86 1.2 MHz kΩ − VCE=10V, IE=−5mA, f=100MHz ∗ − − ∗ Characteristics of built-in transistor. Rev.A 2/4 EMF17 / UMF17N Transistors zElectrical characteristic curves Tr1 -5 -2 -1 -0.5 -0.2 -28.0 -24.5 -21.0 -6 -17.5 -14.0 -4 -10.5 -7.0 -2 -3.5µA -0.4 -0.8 -1.2 -1.6 -500 -450 -400 -350 -300 -80 -250 -60 -200 -150 -40 -100 -20 -50µA IB = 0 -2.0 Fig.2 Grounded emitter output characteristics ( Ι ) 100 -40°C 100 50 VCE = -6V -0.2 -0.5 -1 -2 -5 -10 -20 -0.2 -50 -100 -2 -5 -10 -20 -0.5 -0.2 Ta = 100°C 25°C -40°C -0.1 -0.05 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) TRANSITION FREQUENCY : fT (MHz) lC/lB = 10 -50 -100 -0.5 -0.2 IC/IB = 50 20 -0.1 10 -0.05 -0.2 Ta = 25°C VCE = -12V 200 100 50 1 2 5 10 20 50 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current -1 -2 -5 -10 -20 -50 -100 Fig.6 Collector-emitter saturation voltage vs. collector current ( Ι ) 500 0.5 -0.5 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current ( ΙΙ ) 1000 -1 -0.2 -1 -5 Ta = 25°C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( Ι ) -0.5 -4 -1 100 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) DC CURRENT GAIN : hFE 25°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta = 100°C 200 -3 Fig.3 Grounded emitter output characteristics ( ΙΙ ) 500 200 -2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) VCE = -5V -3V -1V Ta = 25°C -1 0 50 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta = 25°C IB = 0 Fig.1 Grounded emitter propagation characteristics DC CURRENT GAIN : hFE -100 -31.5 -8 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 BASE TO EMITTER VOLTAGE : VBE (V) 500 -35.0 Ta = 25°C COLLECTOR CURRENT : IC (mA) -10 -0.1 -10 VCE = −6V Ta = 100°C 25°C -20 −40°C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) -50 20 Ta = 25°C f = 1MHz IE = 0A IC = 0A Cib 10 Co b 5 2 -0.5 -1 -2 -5 -10 -20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.A 3/4 EMF17 / UMF17N Transistors DTr2 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 5 Ta=−40°C 25°C 100°C 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 1m 500µ Ta=100°C 25°C −40°C 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 Fig.9 Input voltage vs. output current (ON characteristics) VO=5V 500 200 Ta=100°C 25°C −40°C 100 50 20 10 5 2 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A) 1 2m 1k VCC=5V DC CURRENT GAIN : GI 100 Fig.10 Output current vs. input voltage (OFF characteristics) 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.11 DC current gain vs. output current lO/lI=20 OUTPUT VOLTAGE : VO (on) (V) 500m 200m 100m 50m Ta=100°C 25°C −40°C 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.12 Output voltage vs. output current Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1