N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP630 █ APPLICATIONSL TO-220 High Voltage High-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg ——Storage Temperature……………………………－55~150℃ T j ——Operating Junction Temperature …………………………150℃ 1―G PD —— Allowable Power Dissipation（T c=25℃）…………………72W 2―D 3―S VDSS —— Drain-Source Voltage ………………………………… 200V VDGR —— Drain-Gate Voltage (RGS=1MΩ) ……………………500V VGSS —— Gate-Source Voltage …………………………………±30V ID —— *Drain Current（Tc=25℃）…………………………………9.0A * Drain current limited by maximumjunction temperature █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol BVDSS IDSS IGSS Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Min Typ Max Unit Test Conditions １０ V μＡ ID=250μA ,VGS=0V VDS =200V，VGS=0 ±100 4.0 ｎＡ V VGS=±30V , VDS =0V VDS = VGS , ID =250μA ０．４ ? VGS=10V, ID =4.5A S VDS = 40V , ID =4.5A * 200 VGS(th) Gate –Source Leakage Current Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance ０．３４ Forward Transconductance ７．０５ Input Capacitance Output Capacitance ５５０ ７２０ pF 85 110 pF Reverse Transfer Capacitance 22 29 pF Turn - On Delay Time 11 30 nS Rise Time 70 150 nS Turn - Off Delay Time 60 130 nS Fall Time 65 140 nS Qg Total Gate Charge 22 29 nC ＶＤＳ ＝０．８ＶＤＳＳ Qgs Gate–Source Charge 3.6 nC ＶＧＳ＝１０Ｖ Qgd Gate–Drain Charge 10.2 nC ＩＤ＝９．０Ａ ＊ gfs Ciss Coss Crss td(on) tr td(off) tf Is VSD 2.0 Continuous Source Current ９．０ Ａ Diode Forward Voltage １．５ Ｖ *Pulse Test：Pulse Width≤300μs，Duty Cycle≤2% VDS =25V, VGS=0,f=1ＭＨｚ VDD =100V, ID =9A RG= 25 Ω * IS =9.0A , VGS=0 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP630 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP630 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP630 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP630