FS70SM-06 High-Speed Switching Use Nch Power MOS FET REJ03G1430-0200 (Previous: MEJ02G0099-0101) Rev.2.00 Aug 07, 2006 Features • • • • • Drive voltage : 10 V VDSS : 60 V rDS(ON) (max) : 7.5 mΩ ID : 70 A Integrated Fast Recovery Diode (TYP.) : 85 ns Outline RENESAS Package code: PRSS0004ZB-A (Package name: TO-3P) 4 2, 4 1. 2. 3. 4. 1 1 2 Gate Drain Source Drain 3 3 Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Drain-source voltage Symbol VDSS Ratings 60 Unit V VGSS ID IDM IDA IS ISM PD Tch Tstg — ±20 70 280 70 70 280 150 – 55 to +150 – 55 to +150 4.8 V A A A A A W °C °C g Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Rev.2.00 Aug 07, 2006 page 1 of 6 Conditions VGS = 0 V VDS = 0 V L = 100 µH Typical value FS70SM-06 Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Rev.2.00 Aug 07, 2006 Symbol V(BR)DSS IGSS IDSS VGS(th) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) trr page 2 of 6 Min 60 — — 2.0 — — 50 — — — — — — — — — — Typ — — — 3.0 5.7 0.200 70 6540 1640 790 95 195 290 210 1.0 — 85 Max — ±0.1 0.1 4.0 7.5 0.263 — — — — — — — — 1.5 0.83 — Unit V µA mA V mΩ V S pF pF pF ns ns ns ns V °C/W ns Test Conditions ID = 1 mA, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 60 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 35 A, VGS = 10 V ID = 35 A, VGS = 10 V ID = 35 A, VDS = 10 V VDS = 10 V, VGS = 0 V, f = 1MHz VDD = 30 V, ID = 35 A, VGS = 10 V, RGEN = RGS = 50 Ω IS = 35 A, VGS = 0 V Channel to case IS = 70 A, dis/dt = – 100 A/µs FS70SM-06 Performance Curves Maximum Safe Operating Area Power Dissipation Derating Curve 3 2 200 Drain Current ID (A) Power Dissipation PD (W) 250 150 100 50 0 0 50 100 150 100µs 1ms 101 7 5 3 2 DC 100 7 5 3 200 tw = 10µs 102 7 5 3 2 Tc = 25°C Single Pulse 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 Case Temperature Tc (°C) Drain-Source Voltage VDS (V) Output Characteristics (Typical) Output Characteristics (Typical) VGS = 20V 10V 100 50 8V 6V 6V PD = 150W 80 Drain Current ID (A) Drain Current ID (A) 8V Tc = 25°C Pulse Test 60 VGS = 20V 10V 5V 40 20 5V 40 Tc = 25°C Pulse Test 30 4.5V 20 10 4V 4V 0 0.4 0.8 1.2 1.6 0.4 0.6 0.8 1.0 On-State Voltage vs. Gate-Source Voltage (Typical) On-State Resistance vs. Drain Current (Typical) 0.8 ID = 140A 0.6 100A 0.4 70A 0.2 30A 4 8 12 16 Gate-Source Voltage VGS (V) Rev.2.00 0.2 Drain-Source Voltage VDS (V) Tc = 25°C Pulse Test 0 0 Drain-Source Voltage VDS (V) 1.0 0 0 2.0 Aug 07, 2006 page 3 of 6 20 Drain-Source On-State Resistance rDS(ON) (mΩ) Drain-Source On-State Voltage VDS(ON) (V) 0 10 Tc = 25°C Pulse Test 8 6 VGS = 10V 20V 4 2 0 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 Drain Current ID (A) FS70SM-06 Forward Transfer Admittance vs. Drain Current (Typical) Tc = 25°C VDS = 10V Pulse Test 80 60 40 20 0 0 4 8 12 20 TC = 25°C 75°C 125°C 101 7 5 4 3 2 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Switching Characteristics (Typical) Tch = 25°C f = 1MHz VGS = 0V 104 7 5 3 2 Ciss Coss 103 7 5 Crss 3 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 103 7 5 4 3 td(off) tf 2 tr 102 7 5 4 3 td(on) Tch = 25°C VDD = 30V VGS = 10V RGEN = RGS = 50Ω 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Drain-Source Voltage VDS (V) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) Source-Drain Diode Forward Characteristics (Typical) 100 VGS = 0V Pulse Test Tch = 25°C ID = 70A Source Current IS (A) Gate-Source Voltage VGS (V) 2 Capacitance vs. Drain-Source Voltage (Typical) 20 16 VDS = 10V 12 8 20V 40V 4 0 40 80 120 160 Gate Charge Qg (nC) Rev.2.00 VDS = 10V Pulse Test Drain Current ID (A) 105 7 5 3 2 0 102 7 5 4 3 Gate-Source Voltage VGS (V) 3 2 Capacitance C (pF) 16 Switching Time (ns) Drain Current ID (A) 100 Forward Transfer Admittance | yfs | (S) Transfer Characteristics (Typical) Aug 07, 2006 page 4 of 6 100 80 60 Tc = 125°C 40 75°C 25°C 20 0 0 0.4 0.8 1.2 1.6 Source-Drain Voltage VSD (V) 2.0 VGS = 10V ID = 35A Pulse Test 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 5.0 VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 –50 0 100 150 Channel Temperature Tch (°C) Breakdown Voltage vs. Channel Temperature (Typical) Transient Thermal Impedance Characteristics VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 101 7 5 3 2 100 D = 1.0 7 5 0.5 3 0.2 2 PDM 0.1 10–1 7 5 3 2 tw T 0.05 0.02 0.01 Single Pulse D= tw T 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 Channel Temperature Tch (°C) Pulse Width tw (s) Switching Time Measurement Circuit Switching Waveform Vout Monitor Vin Monitor 90% D.U.T. RGEN RL Vin Vout 10% 10% 10% VDD RGS 90% td(on) Rev.2.00 50 Channel Temperature Tch (°C) 1.4 0.4 Threshold Voltage vs. Channel Temperature (Typical) Gate-Source Threshold Voltage VGS(th) (V) 101 7 5 4 3 Transient Thermal Impedance Zth(ch–c) (°C/W) Drain-Source On-State Resistance rDS(ON) (25°C) On-State Resistance vs. Channel Temperature (Typical) Drain-Source Breakdown Voltage V(BR)DSS (25°C) Drain-Source Breakdown Voltage V(BR)DSS (t°C) Drain-Source On-State Resistance rDS(ON) (t°C) FS70SM-06 Aug 07, 2006 page 5 of 6 tr 90% td(off) tf FS70SM-06 Package Dimensions JEITA Package Code SC-65 Package Name TO-3P* RENESAS Code PRSS0004ZB-A Previous Code MASS[Typ.] 4.8g Unit: mm 4.5 15.9Max 4 2 φ3.2 20.0 5.0 1.5 2 19.5Min 4.4 1.0 0.6 2.8 5.45 5.45 4 Order Code Lead form Straight type Lead form Standard packing Static electricity prevention bag Plastic Magazine (Tube) Quantity 20 30 Standard order code Type name Type name – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.2.00 Aug 07, 2006 page 6 of 6 Standard order code example FS70SM-06 FS70SM-06-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145 Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 © 2006. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .6.0