Chenmko CH847BPT Npn general purpose transistor Datasheet

CHENMKO ENTERPRISE CO.,LTD
CH847BPT
SURFACE MOUNT
NPN General Purpose Transistor
VOLTAGE 45 Volts
CURRENT 0.1 Ampere
APPLICATION
* AF input stages and driver applicationon equipment.
* Other general purpose applications.
FEATURE
(3)
(2)
.055 (1.40)
.047 (1.20)
.007 (0.177)
.103 (2.64)
.086 (2.20)
.028 (0.70)
.020 (0.50)
.045 (1.15)
.033 (0.85)
3
.002 (0.05)
.066 (1.70)
MARKING
.110 (2.80)
.082 (2.10)
.119 (3.04)
(1)
* HFE(Q):NV
* HFE(R):1F
* HFE(S):NW
CIRCUIT
.019 (0.50)
.041 (1.05)
.033 (0.85)
* Low colloector-emitter saturation.
* High saturation current capability.
.018 (0.30)
SOT-23
* Small surface mounting type. (SOT-23)
* High current gain.
* Suitable for high packing density.
1
2
SOT-23
Dimensions in inches and (millimeters)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
open emitter
−
50
V
collector-emitter voltage
open base
−
45
V
VEBO
emitter-base voltage
open collector
−
6
V
IC
collector current (DC)
−
0.1
A
PC
Collector power dissipation
−
0.2
−
0.35
−55
+150
°C
−
150
°C
V CBO
collector-base voltage
V CEO
Note2
Tstg
Tj
storage temperature
junction temperature
W
Note
1. Transistor mounted on an FR4 printed-circuit board.
2. When mounted on a 7X5X0.6mm ceramic board.
2004-03
RATING CHARACTERISTIC ( CH847BPT )
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
ICBO
BVCBO
BVCEO
BVEBO
hFE
VCEsat
PARAMETER
CONDITIONS
IE = 0; VCB = 30 V
collector cut-off current
IC = 0; VCB = 30 V; TA = 150 OC
collector-base breakdown voltage
IC =50uA
collector-emitter breakdown voltage IC =1mA
IE =50uA
emitter-base breakdown voltage
VCE /I C =5V/2 mA
current
transfer
ratio
DC
I
C = 10 mA ; I B = 0.5 mA
collector-emitter saturation
IC = 100 mA ; I B = 5 mA
voltage
VBE(on)
base-emitter satur ation voltage
IC = 10 mA;VCE= 5.0 V
Cib
emitter input capacitance
Cob
collector output capacitance
IC = 0; VCB = 0.5V ; f = 1 MH z
IE = 0; VCB = -10V ; f = 1 MH z
fT
transition frequency
IE = -20 mA; VCE = 5 V ; f = 100 MHz
MIN.
−
−
50
45
6
110
−
Typ.
UNIT
MAX.
15
nA
5
uA
V
−
V
−
−
V
800
250 mV
−
−
−
−
−
−
−
−
−
0.58
−
0.77
−
8
pF
−
−
3
200
−
−
−
MHz
600
mV
V
pF
Note
1. Pulse test: t p ≤ 300 µs; δ ≤ 0.02.
2. hFE: Classification Q: 110 to 220, R: 200 to 450, S: 420 to 800
RATING CHARACTERISTIC CURVES ( CH847BPT )
fig2.Co llector-Emitter Saturation
Voltage vs Collector Current
600
500
400
300
50
200
100
IB=0uA
0
0
O
Ta=25 C
10
COLLECTOR-EMITTERVOLTAGE : VCE(V)
5
O
VOLTAGE : VCE(Sat)(V)
100
COLLECTOR EMITTER SATURATION
COLLECTOR CURRENT : Ic (mA)
fig1.Griunded emitter output characteristics
Ta=25 C
IC/IB=10
0.3
0.2
0.1
0
1.0
10
100
I C - COLLECTOR CURRENT (mA)
1000
RATING CHARACTERISTIC CURVES ( CH847BPT )
fig3.DC current gain VS. collector
current ( 1 )
100
1V
AC CURRENT GAIN : hFE
O
Ta=25 C
VCE=10V
f=1KHZ
100
10
0.1
1
10
100
1000
BASE EMITTER VOLTAGE : VBE(ON)(V)
I C - COLLECTO CURRENT (mA)
fig7.Grounded emitter propagation
characteristics
1.8
1.6
O
Ta=25 C
VCE=10V
1.2
0.8
0.4
0
1
10
100
I C - COLLECTOR CURRENT (mA)
Ta=125O C
25 OC
-55 C
100
1
10
100
1000
I C - COLL ECTOR CURRENT (mA)
fig5.AC current gain VS. collector current
1000
O
Ta=25 C
O
10
0.1
1000
BASE EMITTER SATURATION VOLTAGE : VBE(Sat)(V)
1
10
100
I C - COLLECTO CURRENT (mA)
DC CURRENT GAIN : hFE
VCE=10V
10
0.1
1000
O
Ta=25 C
1000
fig6.Base-emitter saturation voltage
VS. collector current
1.8
O
Ta=25 C
IC/IB=10
1.6
1.2
0.8
0.4
0
1.0
10
100
1000
I C - COLLECTO CURRENT (mA)
fig8.Turn-on time VS. collector current
1000
TURN ON TIME : ton(ns)
DC CURRENT GAIN : hFE
1000
fig4.DC current gain VS. collector
current ( 2 )
O
Ta=25 C
IC/IB=10
10 0
VCC=30V
10V
10
1
10
100
I C - COLLECTOR CURRENT (mA)
1000
RATING CHARACTERISTIC CURVES ( CH847BPT )
fig9.Rise time VS. collector current
fig10.Fall time VS. collector current
500
O
Ta=25 C
Vcc=30V
IC/IB=10
FALL TIME : tr(ns)
RISE TIME : tr(ns)
500
100
O
Ta=25 C
Vcc=30V
100
10
5
1.0
100
10
I C - COLLECTO CURRENT (mA)
1000
fig11.Input / output capacitance VS. voltage
CAPAITANCE(pF)
100
O
Ta=25 C
f=1MHZ
Cib
10
1
0.1
Cob
1.0
10
REVERSE BIAS VOLTAGE(V)
100
10
1.0
100
10
I C - COLLECTO CURRENT (mA)
1000
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