Bulletin I27097 rev. A 09/97 IRK.F102.. SERIES INT-A-pakä Power Modules FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features 105 A Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS isolating voltage Industrial standard package UL E78996 approved Description These series of INT-A-pak modules are intended for applications such as self-commutated inverters, DC choppers, electronic welders, induction heating and others where fast switching characteristics are required. Major Ratings and Characteristics Parameters IRK.F102.. Units 105 A 90 °C 233 A @ 50Hz 2850 A @ 60Hz 3000 A @ 50Hz 40.8 KA 2s @ 60Hz 37.2 KA 2s 408 KA 2√s tq 20 and 25 µs t rr 2 µs I T(AV) @ TC I T(RMS) I TSM 2 I t I 2√t VDRM / V RRM TJ range www.irf.com up to 1200 V - 40 to 125 o C 1 IRK.F102.. Series Bulletin I27097 rev. A 09/97 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number IRK.F102.. Series Voltage VRRM/VDRM, maximum repetitive VRSM , maximum non- IRRM/I DRM max. Code peak reverse voltage repetitive peak rev. voltage @ T J = 125°C V V mA 08 800 800 12 1200 1200 30 Current Carrying Capacity ITM ITM Frequency f o 180 el ITM Units 100µs 180 el o 50Hz 210 340 320 500 1590 2210 400Hz 265 415 395 625 975 1390 A A 2500Hz 180 280 320 490 390 570 A 5000Hz 145 230 260 380 260 380 A 10000Hz 110 175 190 275 - - A 50 50 50 50 Recovery voltage Vr 50 Voltage before turn-on Vd 80% VDRM 80% VDRM 50 V 80% VDRM V Rise of on-state current di/dt 50 50 - - - - A/µ s Case temperature 90 60 90 60 90 60 °C Equivalent values for RC circuit 47 Ω / 0.22 µF 47 Ω / 0.22 µF 47 Ω / 0.22 µF On-state Conduction Parameter IT(AV) Maximum average on-state current @ Case temperature IRK.F102.. Units Conditions 105 A 90 °C 180° conduction, half sine wave IT(RMS) Maximum RMS current 233 A TC = 90°C, as AC switch ITSM Maximum peak, one-cycle, 2850 A t = 10ms No voltage non-repetitive surge current 3000 t = 8.3ms reapplied 2400 t = 10ms 100% VRRM 2500 t = 8.3ms reapplied Sinusoidal half wave, t = 10ms No voltage Initial TJ = 125°C 37.2 t = 8.3ms reapplied 28.8 t = 10ms 100% VRRM 26.3 t = 8.3ms reapplied I2t I2 √t Maximum I2 t for fusing Maximum I2 √t for fusing 40.8 408 VT(TO)1 Low level value of threshold voltage 1.12 VT(TO)2 High level value of threshold voltage 1.28 KA2√s t = 0 to 10ms, no voltage reapplied V (16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max. (I > π x IT(AV) ), TJ = TJ max. mW (16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max. 1.97 V Ipk = 350A, TJ = TJ max., tp = 10ms sine pulse Maximum holding current 600 mA TJ = 25°C, IT > 30 A Typical latching current 1000 mA TJ = 25°C, VA = 12V, Ra = 6Ω, Ig = 1A r t1 Low level value of on-state slope resistance 2.43 r t2 High level value of on-state slope resistance 2.00 VTM Maximum on-state voltage drop IH IL 2 KA2 s (I > π x I T(AV)), TJ = TJ max. www.irf.com IRK.F102.. Series Bulletin I27097 rev. A 09/97 Switching Parameter IRK.F102.. di/dt Maximum non-repetitive rate of rise trr Maximum recovery time tq Maximum turn-off time Units Conditions 800 A/µs 2 µs Gate drive 20V, 20Ω, tr ≤ 1ms, VD= 80% VDRM T J = 25°C K J 20 25 ITM = 350A, di/dt = -25A/µs, VR = 50V, TJ = 25°C ITM = 350A, T J = 125°C, di/dt = -25A/µs, µs VR = 50V, dv/dt = 400V/µs linear to 80% V DRM Blocking Parameter dv/dt IRK.F102.. Maximum critical rate of rise of off-state 1000 Units Conditions V/µs TJ = 125°C., exponential to = 67% VDRM 3000 V 50 Hz, circuit to base, TJ = 25°C, t = 1 s 30 mA voltage VINS RMS isolation voltage IRRM Maximum peak reverse and off-state IDRM leakage current TJ = 125°C, rated VDRM/VRRM applied Triggering Parameter IRK.F102.. Units Conditions P GM Maximum peak gate power 40 W f = 50 Hz, d% = 50 P G(AV) Maximum peak average gate power 2 W TJ = 125°C, f = 50Hz, d% = 50 IGM Maximum peak positive gate current 5 A TJ = 125°C, tp < 5ms - VGM Maximum peak negative gate voltage 5 V IGT Max. DC gate current required to trigger 200 mA V GT DC gate voltage required to trigger 3 V IGD DC gate current not to trigger 20 mA V GD DC gate voltage not to trigger 0.25 V TJ = 25°C, Vak 12V, Ra = 6 TJ = 125°C, rated VDRM applied Thermal and Mechanical Specifications Parameter IRK.F102.. TJ Max. junction operating temperature range - 40 to 125 T stg Max. storage temperature range - 40 to 150 RthJC Max. thermal resistance, junction to Units Conditions °C 0.25 K/W Per junction, DC operation 0.035 K/W Mounting surface flat and greased case RthC-hs Max. thermal resistance, case to heatsink T Mounting torque ± 10% wt Approximate weight www.irf.com Per module IAP to heatsink 4 - 6 (35 - 53) busbar to IAP 4 - 6 (35 - 53) 500 (17.8) A mounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Use of cable lugs is (lb*in) not recommendd, busbars should be used and restrained during tightening. Threads must be g (oz) lubricated with a compound Nm 3 IRK.F102.. Series Bulletin I27097 rev. A 09/97 ∆RthJC Conduction (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction 180° 0.016 0.011 120° 0.019 0.020 90° 0.024 0.026 60° 0.035 0.037 30° 0.060 0.060 Units Conditions K/W TJ = 125°C Ordering Information Table Device Code IRK T F 10 2 1 2 3 4 5 1 - Module type 2 - Circuit configuration 3 - Fast SCR 4 - Current rating: IT(AV) x 10 rounded 5 - 1= 2= - 08 H L N 6 7 8 8 option with spacers and longer terminal screws option with standard terminal screws 6 - Voltage code: Code x 100 = VRRM (See Voltage Ratings Table) 7 - dv/dt code: H ≤ 400V/µs 8 - tq code: K ≤ 20µs J ≤ 25µs 9 - None = Standard devices N = Aluminum nitrade substrate NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com IRK.F102.. Series Bulletin I27097 rev. A 09/97 Outline Table - All dimensions in millimeters (inches) - Dimensions are nominal - Full engineering drawings are available on request - UL identification number for gate and cathode wire: UL 1385 - UL identification number for package: UL 94V0 For all types A B C D E IRK...1 25 (0.98) ---- ---- 41 (1.61) 47 (1.85) IRK...2 23 (0.91) 30 (1.18) 36 (1.42) ---- ---- IRKHF.. 130 IRKLF.. IRKUF.. IRK.F102.. Series R thJC (DC) = 0.17 K/W 120 110 Conduction Angle 100 30° 60° 90 90° 120° 180° 80 0 20 40 60 80 100 120 IRKVF.. Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) IRKTF.. IRKKF.. IRKNF.. 130 IRK.F102.. Series R thJC (DC) = 0.17 K/W 120 110 Conduction Period 100 30° 60° 90 90° 120° 180° DC 80 0 20 40 60 80 100 120 140 160 180 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics www.irf.com 5 IRK.F102.. Series 200 180° 120° 90° 60° 30° 180 160 140 120 RMS Limit 100 80 Conduction Angle 60 IRK.F102.. Series Per Junction T J= 125°C 40 20 0 0 20 40 60 80 100 120 Maximum Average On-state Power Loss (W) Max imum Average On-state Power Loss (W) Bulletin I27097 rev. A 09/97 280 DC 180° 120° 90° 60° 30° 240 200 160 RMS Limit 120 Conduction Period 80 IRK.F102.. Series Per Junction T J = 125°C 40 0 0 20 Average On-state Current (A) At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial T J = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 2400 2200 2000 1800 1600 IRK.F102.. Series Per Junction 1400 1 10 100 3000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapplied Rated VRRMReapplied 2800 2600 2400 2200 2000 1800 1600 IRK.F102.. Series Per Jun ction 1400 0.01 0.1 1 Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Transient Thermal Impedance Z thJ C(K/W) Instantaneous On-state Current (A) 80 100 120 140 160 180 Number Of Equal Amplitude Half Cycle Curre nt Pulses (N) 10000 1000 T J= 25°C T = 125°C 100 J IRK.F102.. Series Per Junction 10 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 Instantaneous On-state Voltage (V) Fig. 7 - On-state Voltage Drop Characteristics 6 60 Fig. 4 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Fig. 3 - On-state Power Loss Characteristics 2600 40 Average On-state Current (A) 1 Steady State Value R thJC= 0.17 K/W (DC Operation) 0.1 0.01 IRK.F102.. Series Per Junction 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristic www.irf.com IRK.F102.. Series 200 I TM = 500 A IRK.F102.. Series T J = 125°C 180 Maximum Reverse Recovery Current - Irr (A) Maximum Reverse Recovery Charge - Qrr (µC) Bulletin I27097 rev. A 09/97 160 300 A 140 200 A 120 100 A 100 80 50 A 60 40 20 10 20 30 40 50 60 70 80 90 100 160 I TM = 500 A IRK.F102.. Series T J = 125 °C 140 300 A 200 A 120 100 A 100 50 A 80 60 40 20 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/dt (A/µs) Rate Of Fall Of On-state Current - di/dt (A/µs) Fig. 9 - Reverse Recovery Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics Peak On-state Current (A) 1E4 Snubber circuit R s = 47 ohms C s = 0.22 µF V D = 80% VDRM IRK.F102.. Series Sinusoidal Pulse T C = 90 °C tp tp Snubber circuit R s = 47 ohms C s = 0.22 µF V D= 80% V DRM IRK.F102.. Series Sinusoidal Pulse T C = 60 °C 50 Hz 1E3 400 150 2500 1000 2500 150 400 1000 50 Hz 5000 5000 1E2 1E1 1E2 1E4 1E1 1E41E1 1E3 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 11 - Frequency Characteristics Peak On-state Current (A) 1E4 Snubber circuit R s = 47 ohms C s = 0.22 µF V D = 80% V DRM IRK.F102.. Series Trapezoidal Pulse T C= 90°C, di/dt 50A/µs tp tp Snubber circuit R s = 47 ohms C s = 0.22 µF V D = 80% V DRM IRK.F102.. Series Trapezoidal Pulse T C= 90°C, di/dt 100A/µs 50 Hz 1E3 150 50 Hz 400 400 1000 150 1000 2500 2500 5000 1E2 1E1 5000 1E2 1E3 1E4 1E1 1E4 1E1 Pulse Basewidth (µs) 1E2 1E3 1E4 Pulse Basewidth (µs) Fig. 12 - Frequency Characteristics www.irf.com 7 IRK.F102.. Series Bulletin I27097 rev. A 09/97 Peak On-state Current (A) 1E4 tp Snubber circuit R s = 47 ohms C s = 0.22 µF V D = 80% V DRM IRK.F102.. Series Trapezoidal Pulse T C = 60°C, di/dt 50A/µs 1E3 Snubber circuit R s = 47 ohms C s = 0.22 µF V D = 80% V DRM IRK.F102.. Series Trapezoidal Pulse T C = 60°C, di/dt 100A/µs tp 50 Hz 150 150 400 50 Hz 400 1000 1000 2500 2500 5000 5000 1E2 1E1 1E2 1E4 1E1 1E41E1 1E3 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics 1E4 10 joules per pulse 5 2.5 1 0.5 0.25 0.1 1E3 1 0.5 0.25 0.1 0.05 0.05 1E2 tp IRK.F102.. Series Sinusoidal pulse 1E1 1E1 IRK.F102.. Series Trapezoidal Pulse di/dt 50A/µs tp 1E2 1E4 1E1 1E41E1 1E3 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 14 - Maximum On-state Energy Power Loss Characteristics 100 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/dt : 10V, 20ohms tr<=1 µs 10 (a) (b) (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp tp tp tp = 20ms = 10ms = 5ms = 3.3ms Tj=-40 °C 1 Tj=25 °C Tj=125 °C Instantaneous Gate Voltage (V) Peak On-state Current (A) 10 joules per pulse 5 2.5 (1) (2) (3) (4) VGD IGD 0.1 0.01 IRK.F102.. Series 0.1 Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 15 - Gate Characteristics 8 www.irf.com