IRF IRKTF102-08HJ Fast thyristor/ diode and thyristor/ thyristor Datasheet

Bulletin I27097 rev. A 09/97
IRK.F102.. SERIES
INT-A-pakä Power Modules
FAST THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
105 A
Fast turn-off thyristor
Fast recovery diode
High surge capability
Electrically isolated baseplate
3000 V RMS isolating voltage
Industrial standard package
UL E78996 approved
Description
These series of INT-A-pak modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and
others where fast switching characteristics are required.
Major Ratings and Characteristics
Parameters
IRK.F102..
Units
105
A
90
°C
233
A
@ 50Hz
2850
A
@ 60Hz
3000
A
@ 50Hz
40.8
KA 2s
@ 60Hz
37.2
KA 2s
408
KA 2√s
tq
20 and 25
µs
t rr
2
µs
I T(AV)
@ TC
I T(RMS)
I TSM
2
I t
I 2√t
VDRM / V RRM
TJ
range
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up to 1200
V
- 40 to 125
o
C
1
IRK.F102.. Series
Bulletin I27097 rev. A 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
IRK.F102.. Series
Voltage
VRRM/VDRM, maximum repetitive
VRSM , maximum non-
IRRM/I DRM max.
Code
peak reverse voltage
repetitive peak rev. voltage
@ T J = 125°C
V
V
mA
08
800
800
12
1200
1200
30
Current Carrying Capacity
ITM
ITM
Frequency f
o
180 el
ITM
Units
100µs
180 el
o
50Hz
210
340
320
500
1590
2210
400Hz
265
415
395
625
975
1390
A
A
2500Hz
180
280
320
490
390
570
A
5000Hz
145
230
260
380
260
380
A
10000Hz
110
175
190
275
-
-
A
50
50
50
50
Recovery voltage Vr
50
Voltage before turn-on Vd
80% VDRM
80% VDRM
50
V
80% VDRM
V
Rise of on-state current di/dt
50
50
-
-
-
-
A/µ s
Case temperature
90
60
90
60
90
60
°C
Equivalent values for RC circuit
47 Ω / 0.22 µF
47 Ω / 0.22 µF
47 Ω / 0.22 µF
On-state Conduction
Parameter
IT(AV)
Maximum average on-state current
@ Case temperature
IRK.F102..
Units Conditions
105
A
90
°C
180° conduction, half sine wave
IT(RMS)
Maximum RMS current
233
A
TC = 90°C, as AC switch
ITSM
Maximum peak, one-cycle,
2850
A
t = 10ms
No voltage
non-repetitive surge current
3000
t = 8.3ms
reapplied
2400
t = 10ms
100% VRRM
2500
t = 8.3ms
reapplied
Sinusoidal half wave,
t = 10ms
No voltage
Initial TJ = 125°C
37.2
t = 8.3ms
reapplied
28.8
t = 10ms
100% VRRM
26.3
t = 8.3ms
reapplied
I2t
I2 √t
Maximum I2 t for fusing
Maximum I2 √t for fusing
40.8
408
VT(TO)1 Low level value of threshold voltage
1.12
VT(TO)2 High level value of threshold voltage
1.28
KA2√s t = 0 to 10ms, no voltage reapplied
V
(16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max.
(I > π x IT(AV) ), TJ = TJ max.
mW
(16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max.
1.97
V
Ipk = 350A, TJ = TJ max., tp = 10ms sine pulse
Maximum holding current
600
mA
TJ = 25°C, IT > 30 A
Typical latching current
1000
mA
TJ = 25°C, VA = 12V, Ra = 6Ω, Ig = 1A
r t1
Low level value of on-state slope resistance
2.43
r t2
High level value of on-state slope resistance
2.00
VTM
Maximum on-state voltage drop
IH
IL
2
KA2 s
(I > π x I T(AV)), TJ = TJ max.
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IRK.F102.. Series
Bulletin I27097 rev. A 09/97
Switching
Parameter
IRK.F102..
di/dt
Maximum non-repetitive rate of rise
trr
Maximum recovery time
tq
Maximum turn-off time
Units Conditions
800
A/µs
2
µs
Gate drive 20V, 20Ω, tr ≤ 1ms, VD= 80% VDRM
T J = 25°C
K
J
20
25
ITM = 350A, di/dt = -25A/µs, VR = 50V, TJ = 25°C
ITM = 350A, T J = 125°C, di/dt = -25A/µs,
µs
VR = 50V, dv/dt = 400V/µs linear to 80% V DRM
Blocking
Parameter
dv/dt
IRK.F102..
Maximum critical rate of rise of off-state
1000
Units Conditions
V/µs
TJ = 125°C., exponential to = 67% VDRM
3000
V
50 Hz, circuit to base, TJ = 25°C, t = 1 s
30
mA
voltage
VINS
RMS isolation voltage
IRRM
Maximum peak reverse and off-state
IDRM
leakage current
TJ = 125°C, rated VDRM/VRRM applied
Triggering
Parameter
IRK.F102..
Units Conditions
P GM
Maximum peak gate power
40
W
f = 50 Hz, d% = 50
P G(AV)
Maximum peak average gate power
2
W
TJ = 125°C, f = 50Hz, d% = 50
IGM
Maximum peak positive gate current
5
A
TJ = 125°C, tp < 5ms
- VGM
Maximum peak negative gate voltage
5
V
IGT
Max. DC gate current required to trigger
200
mA
V GT
DC gate voltage required to trigger
3
V
IGD
DC gate current not to trigger
20
mA
V GD
DC gate voltage not to trigger
0.25
V
TJ = 25°C, Vak 12V, Ra = 6
TJ = 125°C, rated VDRM applied
Thermal and Mechanical Specifications
Parameter
IRK.F102..
TJ
Max. junction operating temperature range
- 40 to 125
T stg
Max. storage temperature range
- 40 to 150
RthJC
Max. thermal resistance, junction to
Units Conditions
°C
0.25
K/W
Per junction, DC operation
0.035
K/W
Mounting surface flat and greased
case
RthC-hs Max. thermal resistance, case to
heatsink
T
Mounting torque ± 10%
wt
Approximate weight
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Per module
IAP to heatsink
4 - 6 (35 - 53)
busbar to IAP
4 - 6 (35 - 53)
500 (17.8)
A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to allow
for the spread of the compound. Use of cable lugs is
(lb*in)
not recommendd, busbars should be used and
restrained during tightening. Threads must be
g (oz) lubricated with a compound
Nm
3
IRK.F102.. Series
Bulletin I27097 rev. A 09/97
∆RthJC Conduction
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Conduction angle
Sinusoidal conduction Rectangular conduction
180°
0.016
0.011
120°
0.019
0.020
90°
0.024
0.026
60°
0.035
0.037
30°
0.060
0.060
Units
Conditions
K/W
TJ = 125°C
Ordering Information Table
Device Code
IRK
T
F
10
2
1
2
3
4
5
1
- Module type
2
- Circuit configuration
3
- Fast SCR
4
- Current rating: IT(AV) x 10 rounded
5
- 1=
2=
-
08
H
L
N
6
7
8
8
option with spacers and longer terminal screws
option with standard terminal screws
6
- Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)
7
- dv/dt code: H ≤ 400V/µs
8
- tq code: K ≤ 20µs
J ≤ 25µs
9
- None = Standard devices
N
= Aluminum nitrade substrate
NOTE: To order the Optional Hardware see Bulletin I27900
4
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IRK.F102.. Series
Bulletin I27097 rev. A 09/97
Outline Table
- All dimensions in millimeters (inches)
- Dimensions are nominal
- Full engineering drawings are available
on request
- UL identification number for gate and
cathode wire: UL 1385
- UL identification number for package:
UL 94V0
For all types
A
B
C
D
E
IRK...1
25 (0.98)
----
----
41 (1.61)
47 (1.85)
IRK...2
23 (0.91)
30 (1.18)
36 (1.42)
----
----
IRKHF..
130
IRKLF..
IRKUF..
IRK.F102.. Series
R thJC (DC) = 0.17 K/W
120
110
Conduction Angle
100
30°
60°
90
90°
120°
180°
80
0
20
40
60
80
100
120
IRKVF..
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
IRKTF..
IRKKF..
IRKNF..
130
IRK.F102.. Series
R thJC (DC) = 0.17 K/W
120
110
Conduction Period
100
30°
60°
90
90°
120°
180°
DC
80
0
20
40
60
80 100 120 140 160 180
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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5
IRK.F102.. Series
200
180°
120°
90°
60°
30°
180
160
140
120
RMS Limit
100
80
Conduction Angle
60
IRK.F102.. Series
Per Junction
T J= 125°C
40
20
0
0
20
40
60
80
100
120
Maximum Average On-state Power Loss (W)
Max imum Average On-state Power Loss (W)
Bulletin I27097 rev. A 09/97
280
DC
180°
120°
90°
60°
30°
240
200
160
RMS Limit
120
Conduction Period
80
IRK.F102.. Series
Per Junction
T J = 125°C
40
0
0
20
Average On-state Current (A)
At Any Rated Load Condition And With
Rated V RRMApplied Following Surge.
Initial T J = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
2400
2200
2000
1800
1600
IRK.F102.. Series
Per Junction
1400
1
10
100
3000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial TJ = 125°C
No Voltage Reapplied
Rated VRRMReapplied
2800
2600
2400
2200
2000
1800
1600
IRK.F102.. Series
Per Jun ction
1400
0.01
0.1
1
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Transient Thermal Impedance Z thJ C(K/W)
Instantaneous On-state Current (A)
80 100 120 140 160 180
Number Of Equal Amplitude Half Cycle Curre nt Pulses (N)
10000
1000
T J= 25°C
T = 125°C
100
J
IRK.F102.. Series
Per Junction
10
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
6
60
Fig. 4 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
2600
40
Average On-state Current (A)
1
Steady State Value
R thJC= 0.17 K/W
(DC Operation)
0.1
0.01
IRK.F102.. Series
Per Junction
0.001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
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IRK.F102.. Series
200
I TM = 500 A
IRK.F102.. Series
T J = 125°C
180
Maximum Reverse Recovery Current - Irr (A)
Maximum Reverse Recovery Charge - Qrr (µC)
Bulletin I27097 rev. A 09/97
160
300 A
140
200 A
120
100 A
100
80
50 A
60
40
20
10
20
30
40
50
60
70
80
90 100
160
I TM = 500 A
IRK.F102.. Series
T J = 125 °C
140
300 A
200 A
120
100 A
100
50 A
80
60
40
20
10
20
30
40
50
60
70
80
90 100
Rate Of Fall Of On-state Current - di/dt (A/µs)
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 9 - Reverse Recovery Charge Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
Peak On-state Current (A)
1E4
Snubber circuit
R s = 47 ohms
C s = 0.22 µF
V D = 80% VDRM
IRK.F102.. Series
Sinusoidal Pulse
T C = 90 °C
tp
tp
Snubber circuit
R s = 47 ohms
C s = 0.22 µF
V D= 80% V DRM
IRK.F102.. Series
Sinusoidal Pulse
T C = 60 °C
50 Hz
1E3
400
150
2500
1000
2500
150
400
1000
50 Hz
5000
5000
1E2
1E1
1E2
1E4
1E1
1E41E1
1E3
1E2
Pulse Basewidth (µs)
1E3
1E4
Pulse Basewidth (µs)
Fig. 11 - Frequency Characteristics
Peak On-state Current (A)
1E4
Snubber circuit
R s = 47 ohms
C s = 0.22 µF
V D = 80% V DRM
IRK.F102.. Series
Trapezoidal Pulse
T C= 90°C, di/dt 50A/µs
tp
tp
Snubber circuit
R s = 47 ohms
C s = 0.22 µF
V D = 80% V DRM
IRK.F102.. Series
Trapezoidal Pulse
T C= 90°C, di/dt 100A/µs
50 Hz
1E3
150
50 Hz
400
400
1000
150
1000
2500
2500
5000
1E2
1E1
5000
1E2
1E3
1E4 1E1
1E4
1E1
Pulse Basewidth (µs)
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 12 - Frequency Characteristics
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7
IRK.F102.. Series
Bulletin I27097 rev. A 09/97
Peak On-state Current (A)
1E4
tp
Snubber circuit
R s = 47 ohms
C s = 0.22 µF
V D = 80% V DRM
IRK.F102.. Series
Trapezoidal Pulse
T C = 60°C, di/dt 50A/µs
1E3
Snubber circuit
R s = 47 ohms
C s = 0.22 µF
V D = 80% V DRM
IRK.F102.. Series
Trapezoidal Pulse
T C = 60°C, di/dt 100A/µs
tp
50 Hz
150
150
400
50 Hz
400
1000
1000
2500
2500
5000
5000
1E2
1E1
1E2
1E4
1E1
1E41E1
1E3
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 13 - Frequency Characteristics
1E4
10 joules per pulse
5
2.5
1
0.5
0.25
0.1
1E3
1
0.5
0.25
0.1
0.05
0.05
1E2
tp
IRK.F102.. Series
Sinusoidal pulse
1E1
1E1
IRK.F102.. Series
Trapezoidal Pulse
di/dt 50A/µs
tp
1E2
1E4
1E1
1E41E1
1E3
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 20ohms
tr<=1 µs
10
(a)
(b)
(1) PGM = 10W,
(2) PGM = 20W,
(3) PGM = 40W,
(4) PGM = 60W,
tp
tp
tp
tp
= 20ms
= 10ms
= 5ms
= 3.3ms
Tj=-40 °C
1
Tj=25 °C
Tj=125 °C
Instantaneous Gate Voltage (V)
Peak On-state Current (A)
10 joules per pulse
5
2.5
(1)
(2)
(3) (4)
VGD
IGD
0.1
0.01
IRK.F102.. Series
0.1
Frequency Limited by PG(AV)
1
10
100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
8
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