MBRB2060CTG, MBR2060CTG, NRVBB2060CTT4G Switch‐mode Power Rectifiers TO−220/D2PAK Surface Mount Power Package These state-of-the-art devices employ the use of the Schottky Barrier principle with a platinum barrier metal. http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 20 AMPERES, 60 VOLTS Features • • • • • • • • • • Package Designed for Power Surface Mount Applications (D2PAK) Center-Tap Configuration (D2PAK) Guardring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Short Heat Sink Tab Manufactured − Not Sheared (D2PAK) Similar in Size to Industry Standard TO−220 Package NRVBB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices • • 1 3 • Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 • Weight: 1.7 Grams (Approximately) − D2PAK, • TO−220 CASE 221A STYLE 6 4 Mechanical Characteristics: • D2PAK CASE 418B STYLE 3 1.9 Grams (Approximately) − TO−220 Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds (D2PAK) Device Meets MSL1 Requirements (D2PAK) ESD Ratings: ♦ Machine Model = C (> 400 V) ♦ Human Body Model = 3B (> 8000 V) MARKING DIAGRAMS AY WW B2060G AKA A Y WW B2060 G AKA AY WW B2060G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Diode Polarity ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2014 September, 2014 − Rev. 10 1 Publication Order Number: MBRB2060CT/D MBRB2060CTG, MBR2060CTG, NRVBB2060CTT4G MAXIMUM RATINGS (Per Leg) Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 60 V Average Rectified Forward Current (Rated VR, TC = 110°C) Total Device IF(AV) 10 20 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 100°C) IFRM Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 0.5 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −65 to +175 °C dv/dt 10,000 V/ms Rating A 20 Voltage Rate of Change (Rated VR) A 150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS (Per Leg) Characteristic Symbol Value RqJC RqJA 2.0 50 RqJA 60 Symbol Value Unit °C/W Thermal Resistance, Junction−to−Case Junction−to−Ambient (Note 2) MBRB2060CTG Junction−to−Ambient (Note 2) MBR2060CTG 2. When mounted using minimum recommended pad size on FR−4 board. ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Maximum Instantaneous Forward Voltage (Note 3) (iF = 20 Amps, TJ = 125°C) (iF = 20 Amps, TJ = 25°C) vF Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C) iR Unit V 0.85 0.95 mA 35 0.15 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. ORDERING INFORMATION Device MBRB2060CTG Package Shipping† D2PAK 50 Units / Rail (Pb−Free) MBRB2060CTT4G D2PAK (Pb−Free) 800 Units / Tape & Reel NRVBB2060CTT4G* D2PAK (Pb−Free) 800 Units / Tape & Reel MBR2060CTG TO−220 (Pb−Free) 50 Units / Rail †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NRVBB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable http://onsemi.com 2 50 TJ = 150°C 125°C 20 I R, REVERSE CURRENT (mA) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) MBRB2060CTG, MBR2060CTG, NRVBB2060CTT4G 150°C 10 100°C 5 TJ = 25°C 3 1 10 TJ = 125°C TJ = 100°C 1 0.1 0.01 0.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 vF, INSTANTANEOUS VOLTAGE (VOLTS) 0.9 1 TJ = 25°C 0 20 dc 40 60 80 100 VR, REVERSE VOLTAGE (VOLTS) 120 140 Figure 2. Typical Reverse Current Per Diode 20 18 RATED VOLTAGE APPLIED RqJC = 2°C/W AVERAGE POWER (WATTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) Figure 1. Typical Forward Voltage Per Diode 20 15 SQUARE WAVE 10 5.0 IPK/IAV = 5 TJ = 125°C PI 16 IPK/IAV = 10 14 12 IPK/IAV = 20 10 SQUARE WAVE 8 6 DC 4 2 0 0 80 100 120 140 TC, CASE TEMPERATURE (°C) 160 180 0 Figure 3. Typical Current Derating, Case, Per Leg 2 4 6 8 10 12 14 AVERAGE CURRENT (AMPS) 16 18 Figure 4. Average Power Dissipation and Average Current http://onsemi.com 3 20 MBRB2060CTG, MBR2060CTG, NRVBB2060CTT4G PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E V W −B− 4 DIM A B C D E F G H J K L M N P R S V A 1 2 S 3 −T− SEATING PLANE K W J G D H 3 PL 0.13 (0.005) VARIABLE CONFIGURATION ZONE M T B M N R M STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE P U L L L M M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 4 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 MBRB2060CTG, MBR2060CTG, NRVBB2060CTT4G PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 N STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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