CD4041UBMS Data Sheet December 1992 File Number CMOS Quad True/Complement Buffer Features CD4041UBMS types are quad true/complement buffers consisting of n- and p- channel units having low channel resistance and high current (sourcing and sinking) capability. The CD4041UBMS is intended for use as a buffer, line driver, or CMOS-to-TTL driver. It can be used as an ultra-low power resistor-network driver for A/D and D/A conversion, as a transmission-line driver, and in other applications where high noise immunity and low power dissipation are primary design requirements. • High Voltage Type (20V Rating) The CD4041UBMS is supplied in these 14 lead outline packages: Braze Seal DIP H4Q Frit Seal DIP H1B Ceramic Flatpack H3W 3309 • Balanced Sink and Source Current; Approximately 4 Times Standard “B” Drive • Equalized Delay to True and Complement Outputs • 100% Tested for Quiescent Current at 20V • Maximum Input Current of 1µA at 18V Over Full Package-Temperature Range; - 100nA at 18V and +25oC • 5V, 10V and 15V Parametric Ratings • Meets All Requirements of JEDEC Tentative Standard No. 13B, “Standard Specificationsfor Description of ‘B’ Series CMOS Devices” Applications Pinout CD4041UBMS TOP VIEW • High Current Source/Sink Driver • CMOS-to-DTL/TTL Converter Buffer E=A 1 14 VDD • Display Driver F=A 2 13 D • MOS Clock Driver A 3 12 N = D • Resistor Network Driver (Ladder or Weighted R) G=B 4 11 M = D • Buffer H=B 5 10 C • Transmission Line Driver B 6 9 L=C VSS 7 8 K=C Functional Diagram VDD 3 VDD VDD 1 A E E=A TRUE OUTPUT INPUT* 2 F F=A 6 VSS 4 B G G=B 5 H=B 8 C K K=C VSS VSS VDD P H 10 VSS BY CMOS INPUT PROTECTION NETWORK COMPLEMENT OUTPUT N *ALL INPUTS PROTECTED VDD VSS FIGURE 1. SCHEMATIC DIAGRAM 1 OF 4 BUFFERS 9 L L=C 13 11 M D M=D VSS = 7 VDD = 14 12 N N=D 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 CD4041UBMS Absolute Maximum Ratings Reliability Information DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . . -0.5V to VDD +0.5V DC Input Current, Any One Input. . . . . . . . . . . . . . . . . . . . . . . . .±10mA Operating Temperature Range . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for 10s Maximum Thermal Resistance. . . . . . . . . . . . . . . . θja θjc Ceramic DIP and FRIT Package . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W Maximum Package Power Dissipation (PD) at +125oC For TA = -55oC to +100oC (Package Type D, F, K) . . . . . .500mW For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor. . . . . . . . . . . . . . . .100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Supply Current SYMBOL IDD CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND Input Leakage Current IIL VIN = VDD or GND VDD = 20 VDD = 18V Input Leakage Current IIH VIN = VDD or GND VDD = 20 VDD = 18V Output Voltage Output Voltage VOL15 VOH15 VDD = 15V, No Load VDD = 15V, No Load (Note 3) LIMITS GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 1 +25oC - 2 µA 2 +125oC - 200 µA 3 -55oC - 2 µA 1 +25oC -100 - nA 2 +125oC -1000 - nA 3 -55oC -100 - nA 1 +25oC - 100 nA 2 +125oC - 1000 nA 3 -55oC - 100 nA 1, 2, 3 +25oC, +125oC, -55oC - 50 mV 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 1.6 - mA Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 5.0 - mA 1 +25oC 19 - mA 1 +25oC - -1.6 mA Output Current (Sink) Output Current (Source) IOL15 IOH5A VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -6.4 mA Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -5.0 mA 1 +25oC - -19 mA 1 +25oC -2.8 -0.7 V VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V VDD = 2.8V, VIN = VDD or GND 7 +25oC VDD = 20V, VIN = VDD or GND 7 +25oC VDD = 18V, VIN = VDD or GND 8A +125oC VDD = 3V, VIN = VDD or GND 8B -55oC Output Current (Source) N Threshold Voltage P Threshold Voltage Functional IOH15 VNTH VPTH F VDD = 15V, VOUT = 13.5V VDD = 10V, ISS = -10µA VOH > VOL < VDD/2 VDD/2 V Input Voltage Low (Note 2) VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.0 V Input Voltage High (Note 2) VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 4.0 - V Input Voltage Low (Note 2) VIL VDD = 15V, VOH > 13.5V, VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC - 2.5 V Input Voltage High (Note 2) VIH VDD = 15V, VOH > 13.5V, VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC 12.5 - V NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs. 2 3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max. CD4041UBMS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Propagation Delay Transition Time SYMBOL TPHL TPLH TTHL TTLH CONDITIONS (NOTE 1, 2) VDD = 5V, VIN = VDD or GND VDD = 5V, VIN = VDD or GND LIMITS GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 9 +25oC - 120 ns 10, 11 +125oC, -55oC - 162 ns 9 +25oC - 80 ns 10, 11 +125oC, -55oC - 108 ns NOTES: 1. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS VDD = 5V, VIN = VDD or GND VDD = 10V, VIN = VDD or GND VDD = 15V, VIN = VDD or GND NOTES TEMPERATURE MIN MAX UNITS 1, 2 -55oC, +25oC µA 1, 2 1, 2 - 1 +125oC - 30 µA -55oC, +25oC - 2 µA +125oC - 60 µA -55oC, +25oC - 2 µA +125oC - 120 µA - 50 mV Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC, 55oC Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC, 55oC - 50 mV Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC, 55oC 4.95 - V Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC, 55oC 9.95 - V Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 1.2 - mA -55oC 2.1 - mA Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VDD = 10V, VOUT = 0.5V VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V VDD = 5V, VOUT = 2.5V VDD = 10V, VOUT = 9.5V VDD =15V, VOUT = 13.5V 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 +125oC 3.5 - mA -55oC 6.25 - mA +125oC 13 - mA -55oC 24 - mA +125oC - -1.2 mA -55oC - -2.1 mA +125oC - -4.6 mA -55oC - -8.4 mA +125oC - -3.5 mA -55oC - -6.25 mA +125oC - -13 mA -55oC - -24 mA - 2 V Input Voltage Low VIL VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC, 55oC Input Voltage High VIH VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC, 55oC 8 - V Propagation Delay TPHL TPLH 1, 2, 3 +25oC - 70 ns 1, 2, 3 +25oC - 50 ns 3 VDD = 10V VDD = 15V CD4041UBMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER SYMBOL Transition Time TTHL TTLH Input Capacitance CIN CONDITIONS VDD = 10V VDD = 15V Any Input NOTES TEMPERATURE MIN MAX UNITS 1, 2, 3 +25oC - 40 ns 1, 2, 3 +25oC - 30 ns 1, 2 +25oC - 22.5 pF NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER SYMBOL Supply Current IDD N Threshold Voltage VNTH ∆VTN P Threshold Voltage VTP ∆VTP Functional NOTES TEMPERATURE MIN MAX UNITS 1, 4 +25oC - 7.5 µA 1, 4 +25oC -2.8 -0.2 V VDD = 10V, ISS = -10µA 1, 4 +25oC - ±1 V VSS = 0V, IDD = 10µA 1, 4 +25oC 0.2 2.8 V 1, 4 +25oC - ±1 V 1 +25oC VOH > VDD/2 VOL < VDD/2 V 1, 2, 3, 4 +25oC - 1.35 x +25oC Limit ns VDD = 20V, VIN = VDD or GND N Threshold Voltage Delta P Threshold Voltage Delta CONDITIONS F VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V 3. See Table 2 for +25oC limit. NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 4. Read and Record TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC PARAMETER SYMBOL DELTA LIMIT Supply Current - MSI-1 IDD ± 0.2µA Output Current (Sink) IOL5 ± 20% x Pre-Test Reading IOH5A ± 20% x Pre-Test Reading Output Current (Source) TABLE 6. APPLICABLE SUBGROUPS MIL-STD-883 METHOD GROUP A SUBGROUPS Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A IDD, IOL5, IOH5A CONFORMANCE GROUP Interim Test 2 (Post Burn-In) PDA (Note 1) Interim Test 3 (Post Burn-In) PDA (Note 1) Final Test Group A Group B 100% 5004 1, 7, 9 100% 5004 1, 7, 9, Deltas 100% 5004 1, 7, 9 100% 5004 1, 7, 9, Deltas 100% 5004 2, 3, 8A, 8B, 10, 11 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroup B-6 Sample 5005 1, 7, 9 4 READ AND RECORD IDD, IOL5, IOH5A Subgroups 1, 2, 3, 9, 10, 11 CD4041UBMS TABLE 6. APPLICABLE SUBGROUPS (Continued) CONFORMANCE GROUP Group D MIL-STD-883 METHOD GROUP A SUBGROUPS Sample 5005 1, 2, 3, 8A, 8B, 9 READ AND RECORD Subgroups 1, 2 3 NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. TABLE 7. TOTAL DOSE IRRADIATION CONFORMANCE GROUPS TEST READ AND RECORD MIL-STD-883 METHOD PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD 5005 1, 7, 9 Table 4 1, 9, Deltas Table 4 Group E Subgroup 2 TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION OPEN GROUND VDD Static Burn-In 1 (Note 1) 1, 2, 4, 5, 8, 9, 11, 12 3, 6, 7, 10, 13 14 Static Burn-In 2 (Note 1) 1, 2, 4, 5, 8, 9, 11, 12 7 3, 6, 10, 13, 14 Dynamic BurnIn (Note 2) - 7 14 1, 2, 4, 5, 8, 9, 11, 12 7 3, 6, 10, 13, 14 Irradiation (Note 3) 9V ± -0.5V 50kHz 1, 2, 4, 5, 8, 9, 11, 12 3, 6, 10, 13 25kHz NOTE: 1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V 2. Each pin except VDD and GND will have a series resistor of 4.75K ± 5%; VDD = 18V ± 0.5V 3. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V ± 0.5V Typical Performance Characteristics AMBIENT TEMPERATURE (TA) = +25oC 70 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 60 50 10V 40 30 20 5V 10 OUTPUT LOW CURRENT (IOL) (mA) OUTPUT LOW CURRENT (IOL) (mA) AMBIENT TEMPERATURE (TA) = +25oC 70 60 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 50 40 30 10V 20 10 5V 0 1 2 3 4 5 6 7 8 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) FIGURE 2. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS 0 1 2 3 4 5 6 7 8 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) FIGURE 3. MINIMUM LOW (SINK) CURRENT CHARACTERISTICS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com 5 CD4041UBMS Typical Performance Characteristics -1 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -8 -7 -5 -3 -6 -4 -2 0 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) AMBIENT TEMPERATURE (TA) = +25oC -10 -20 GATE-TO-SOURCE VOLTAGE (VGS) = -5V -30 -40 -50 -10V -60 -15V -70 -20 -10V -50 -60 AMBIENT TEMPERATURE (TA) = +25oC 60 50 30 15V 20 70 60 SUPPLY VOLTAGE (VDD) = 5V 50 40 30 10V 20 10 15V 10 0 10 20 30 50 70 40 60 80 LOAD CAPACITANCE (CL) (pF) 90 100 FIGURE 6. TYPICAL PROPAGATION DELAY TIME vs LOAD CAPACITANCE 0 10 20 30 50 70 40 60 80 LOAD CAPACITANCE (CL) (pF) 90 100 FIGURE 7. TYPICAL TRANSITION TIME vs LOAD CAPACITANCE AMBIENT TEMPERATURE (TA) = +25oC 12 VI OUTPUT VOLTAGE (VO) (V) 14 OUTPUT VOLTAGE (VO) (V) -70 AMBIENT TEMPERATURE (TA) = +25oC SUPPLY VOLTAGE (VDD) = 5V 10V -40 FIGURE 5. MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS 80 40 -30 -15V AMBIENT TEMPERATURE (TA) = +25oC 70 0 -10 GATE-TO-SOURCE VOLTAGE (VGS) = -5V TRANSITION TIME (tTLH, tTHL) (ns) PROPAGATION DELAY TIME (tPHL, tPLH) (ns) FIGURE 4. TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS -1 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -8 -7 -5 -3 -6 -4 -2 (Continued) VO VDD = 10V 10 AMBIENT TEMP (TA) = +25oC 8 6 VDD = 5V VDD = 3V 4 2 VI SUPPLY VOLTAGE (VDD) = 15V VO 15.0 12.5 10V 10.0 7.5 5V 5.0 2.5 0 2 4 6 8 10 12 14 INPUT VOLTAGE (VI) (V) FIGURE 8. MINIMUM AND MAXIMUM TRANSFER CHARACTERISTICS - TRUE OUTPUT 6 16 18 0 2.5 5.0 7.5 10 12.5 15 INPUT VOLTAGE (VI) (V) FIGURE 9. MINIMUM AND MAXIMUM TRANSFER CHARACTERISTICS - COMPLEMENT OUTPUT CD4041UBMS Typical Performance Characteristics (Continued) 8 6 4 2 105 8 6 4 8 6 4 2 1kHz AT 15V 100kHz AT 15V 2 104 8 6 4 10kHz AT 15V 2 103 8 100kHz AT 5V 6 4 2 102 8 6 4 10kHz AT 5V 2 10 8 6 4 1kHz AT 5V 10 4 68 2 102 VDD = 15V 104 10V 8 6 4 2 5V 5V 103 8 3V 6 4 2 102 8 6 4 2 101 8 6 4 2 2 2 AMBIENT TEMPERATURE (TA) = +25oC INPUT tr = tp = 20ns 105 AMBIENT TEMPERATURE (TA) = +25oC POWER DISSIPATION (PD) (µW) (PER OUTPUT PAIR) POWER DISSIPATION PER OUTPUT PAIR (PD) (µW) 4 2 4 68 2 103 4 68 2 104 4 68 2 105 4 68 2 106 4 68 107 CL = 15pF CL = 50pF INPUT RISE AND FALL TIME (tr, tf) (ns) 2 103 FIGURE 10. TYPICAL POWER DISSIPATION vs INPUT RISE AND FALL TIME PER OUTPUT PAIR 4 68 2 4 68 2 4 68 2 4 68 104 105 106 FREQUENCY (f) (Hz) 107 FIGURE 11. TYPICAL POWER DISSIPATION vs FREQUENCY PER OUTPUT PAIR Chip Dimensions and Pad Layout 8 7 6 9 5 10 METALLIZATION: Thickness: 11kÅ − 14kÅ, 4 PASSIVATION: BOND PADS: 11 0.004 inches X 0.004 inches MIN DIE THICKNESS: 3 12 2 13 14 1 Dimensions in parentheses are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch) 7 AL. 10.4kÅ - 15.6kÅ, Silane 0.0198 inches - 0.0218 inches DIE SIZE: X = 72 (69 - 77) Y = 82 (79 - 87)