DATA SHEET BZT52C2V4-BZT52C51 SEMICONDUCTOR SOD-123 Plastic-Encapsulate Diode ZENER DIODE SOD123 Unit:inch(mm) FEATURES •Planar Die Construction •500mW Power Dissipation on Ceramic PCB •General Purpose Medium Current •Ideally Suited for Automated Assembly Processes •High temperature soldering : 260OC / 10 seconds at terminals Symbol A A1 A2 b c D E E1 L L1 θ •Pb free product at available : 99% Sn above meet RoHS environment substance directive request Maximum Ratings (Tamb=25℃ unless otherwise specified) Characteristic Forward Voltage Value VF 0.9 V Pd 500 mW RθJA 305 ℃/W Tj, TSTG -55 to +150 Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Air (Note 1) http://www.yeashin.com Dimensions In Inches Min Max 0.041 0.049 0.000 0.004 0.041 0.045 0.018 0.026 0.003 0.006 0.059 0.067 0.102 0.110 0.140 0.152 0.020 REF 0.010 0.018 0° 8° Symbol @ IF = 10mA Operating and Storage Temperature Range Dimensions In Millimeters Min Max 1.050 1.250 0.000 0.100 1.050 1.150 0.450 0.650 0.080 0.150 1.500 1.700 2.600 2.800 3.550 3.850 0.500 REF 0.250 0.450 0° 8° 1 Unit ℃ REV.02 20120403 BZT52C2V4-BZT52C51 Electrical Characteristics @ TA = 25°C unless otherwise specified Zener Voltage Range (Note 2) Type Number Marking Code (Note 3) Nom (V) Min (V) Max (V) mA BZT52C2V4 WX 2.4 2.2 2.6 5 100 600 BZT52C2V7 W1 2.7 2.5 2.9 5 100 BZT52C3V0 W2 3.0 2.8 3.2 5 BZT52C3V3 W3 3.3 3.1 3.5 5 BZT52C3V6 W4 3.6 3.4 3.8 BZT52C3V9 W5 3.9 3.7 BZT52C4V3 W6 4.3 BZT52C4V7 W7 4.7 BZT52C5V1 W8 BZT52C5V6 BZT52C6V2 BZT52C6V8 Vz @IZT Maximum Reverse Current Maximum Zener Impedance (Note 4) IZT ZZT @ IZT ZZK @ IZK Test Current IZTC IZK IR mA uA V Min Max 1.0 50 1.0 -3.5 0 5 600 1.0 20 1.0 -3.5 0 5 95 600 1.0 10 1.0 -3.5 0 5 95 600 1.0 5.0 1.0 -3.5 0 5 5 90 600 1.0 5.0 1.0 -3.5 0 5 4.1 5 90 600 1.0 3.0 1.0 -3.5 0 5 4.0 4.6 5 90 600 1.0 3.0 1.0 -3.5 0 5 4.4 5.0 5 80 500 1.0 3.0 2.0 -3.5 0.2 5 5.1 4.8 5.4 5 60 480 1.0 2.0 2.0 -2.7 1.2 5 W9 5.6 5.2 6.0 5 40 400 1.0 1.0 2.0 -2 2.5 5 WA 6.2 5.8 6.6 5 10 150 1.0 3.0 4.0 0.4 3.7 5 WB 6.8 6.4 7.2 5 15 80 1.0 2.0 4.0 1.2 4.5 5 BZT52C7V5 WC 7.5 7.0 7.9 5 15 80 1.0 1.0 5.0 2.5 5.3 5 BZT52C8V2 WD 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 5 BZT52C9V1 WE 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 5 BZT52C10 WF 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5 BZT52C11 WG 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5 BZT52C12 WH 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5 BZT52C13 WI 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5 BZT52C15 WJ 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 5 BZT52C16 WK 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 5 BZT52C18 WL 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0 5 BZT52C20 WM 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 5 BZT52C22 WN 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 5 BZT52C24 WO 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 5 BZT52C27 WP 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 2 BZT52C30 WQ 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 2 BZT52C33 WR 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 2 BZT52C36 WS 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 2 W @ VR Typical Temperature Coefficient @ IZTC mV/°C mA BZT52C39 WT 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 2 BZT52C43 WU 43 40.0 46.0 2 100 700 1.0 0.1 32 10.0 12.0 5 BZT52C47 WV 47 44.0 50.0 2 100 750 1.0 0.1 35 10.0 12.0 5 BZT52C51 WW 51 48.0 54.0 2 100 750 1.0 0.1 38 10.0 12.0 5 Notes: 1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2. 2. Tested with pulses, period = 5ms, pulse width = 300ms. 3. When provided, otherwise, parts are provided with date code only, and type number identifications appears on reel only. 4. f = 1KHz. 5. Thermal resistance from junction to ambient and form junction to lead P.C.B mounted on 0.2x0.2" (5.0x5.0mm) copper pad areas R £K JL= R £K JC=100¢J / W http://www.yeashin.com 2 REV.02 20120403 BZT52C2V4-BZT52C51 Typical Characteristics 0.6 50 IZ, ZENER CURRENT (mA) PD, POWER DISSIPATION (W) C2V7 C3V9 C3V3 0.5 0.4 0.3 0.2 0.1 0 Tj = 25°C 40 C5V6 C4V7 C6V8 C6V2 C8V2 30 20 10 Test Current IZ 5.0mA 0 0 25 75 50 100 125 150 0 1 3 4 5 6 8 9 7 VZ, ZENER VOLTAGE (V) Fig. 2 Zener Breakdown Characteristics TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs Ambient Temperature 30 Tj = 25°C 10 C10 2 10 C39 Tj = 25°C IZ, ZENER CURRENT (mA) IZ, ZENER CURRENT (mA) C12 C15 20 C18 C22 10 0 Test current IZ 2mA C27 Test current IZ 5mA 0 C33 C36 10 20 30 VZ, ZENER VOLTAGE (V) Fig. 3 Zener Breakdown Characteristics 8 6 4 Test Current IZ 2mA 2 0 40 10 20 30 40 50 60 70 80 90 100 VZ, ZENER VOLTAGE (V) Fig. 4 Zener Breakdown Characteristics 1000 Tj = 25 °C f = 1MHz CT, TOTAL CAPACITANCE (pF) VR = 1V VR = 2V 100 VR = 1V 3 VR = 2V 10 10 1 100 VZ, NOMINAL ZENER VOLTAGE (V) Fig. 5 Total Capacitance vs Nominal Zener Voltage http://www.yeashin.com 3 REV.02 20120403