BCM856S PNP Silicon AF Transistor Array • Precision matched transistor pair: ∆I C ≤ 10% • For current mirror applications 4 5 6 1 • Low collector-emitter saturation voltage 2 3 • Two (galvanic) internal isolated Transistors • Complementary type: BCM846S • BC856S: For orientation in reel see package information below • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07175 Type BCM856S Marking Pin Configuration Package 3Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 65 Collector-emitter voltage VCES 80 Collector-base voltage VCBO 80 Emitter-base voltage VEBO 5 Collector current IC 100 Peak collector current ICM 200 Total power dissipation- Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg Value Unit V mA TS = 115 °C 1Pb-containing -65 ... 150 package may be available upon special request 1 2007-04-27 BCM856S Thermal Resistance Parameter Symbol Junction - soldering point 1) RthJS Value Unit 140 K/W Values Unit Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol min. typ. max. V(BR)CEO 65 - - V(BR)CBO 80 - - V(BR)CES 80 - - V(BR)EBO 5 - - DC Characteristics Collector-emitter breakdown voltage V IC = 10 mA, IB = 0 A Collector-base breakdown voltage IC = 10 µA, IE = 0 A Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 A Emitter-base breakdown voltage IE = 10 µA, I C = 0 A Collector-base cutoff current I CBO µA VCB = 30 V, IE = 0 A - - 0.015 VCB = 30 V, IE = 0 A, TA = 150 °C - - 5 DC current gain-2) hFE - IC = 10 µA, VCE = 5 V - 250 - IC = 2 mA, VCE = 5 V 200 290 450 Collector-emitter saturation voltage2) VCEsat mV IC = 10 mA, IB = 0.5 mA - 90 300 IC = 100 mA, IB = 5 mA - 250 650 IC = 10 mA, IB = 0.5 mA - 700 - IC = 100 mA, IB = 5 mA - 850 - IC = 2 mA, VCE = 5 V 600 650 750 IC = 10 mA, VCE = 5 V - - 820 Base emitter saturation voltage 2) VBEsat Base-emitter voltage-2) VBE(ON) ∆I C Matching IB = 1 µA, VCE1 = V CE2 = 1.0V IB = 100 µA, VCE1 = VCE2 = 1.0V 1For % -10 - 10 -10 - 10 calculation of R thJA please refer to Application Note Thermal Resistance 2Puls test: t < 300µs; D < 2% 2 2007-04-27 BCM856S Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. fT - 250 - MHz Ccb - 3 - pF Ceb - 8 - h11e - 4.5 - kΩ h12e - 2 - 10-4 h21e - 330 - - h22e - 30 - µS F - - 10 dB AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit reverse voltage transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Short-circuit forward current transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz Noise figure IC = 200 µA, VCE = 5 V, f = 1 kHz, ∆ f = 200 Hz, RS = 2 kΩ 3 2007-04-27 BCM856S DC current gain hFE = ƒ(IC) Collector-emitter saturation voltage VCE = 5V IC = ƒ(VCEsat), hFE = 20 EHP00382 10 3 5 h FE EHP00380 10 2 ΙC 100 C mA 100 C 25 C -50 C 25 C -50 C 10 2 10 1 5 5 10 1 10 5 5 10 0 10 -2 5 10 -1 5 10 0 5 10 1 mA 10 ΙC 0 10 -1 2 0 0.1 0.2 0.4 0.3 Base-emitter saturation voltage Output characteristics IC = ƒ(VCE), IC = ƒ(V BEsat), hFE = 20 IB = parameter EHP00379 10 2 V 0.5 VCEsat 15 mA mA ΙC 1 IB = 40µA 12 11 IB = 36µA 10 IC 10 100 C 25 C -50C 5 IB =32µA 9 IB = 28µA 8 IB = 24µA 7 IB = 20µA 6 10 0 IB = 16µA 5 IB = 12µA 4 5 3 IB = 8µA 2 IB = 4µA 1 10 -1 0 0.2 0.4 0.6 0.8 0 0 V 1.2 V BEsat 1 2 3 V 5 VCE 4 2007-04-27 BCM856S Collector current I C = ƒ(VBE) VCE = Parameter Collector cutoff current ICBO = ƒ(TA) VCBO = 30 V 10 -1 A -2 10 5V 5V 5V 1V 1V 1V EHP00381 10 4 nA Ι CB0 10 3 5 IC TA=100°C 10 -3 max 10 2 TA=25°C 5 10 -4 TA=-50°C typ 10 1 5 10 -5 10 0 5 10 -6 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V 10 -1 1 0 50 100 VBE Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) EHP00378 12 pF MHz 5 10 CCB(CEB ) fT 150 TA Transition frequency fT = ƒ(IC) VCE = parameter in V, f = 2 GHz 10 3 C 9 8 7 10 2 6 5 5 CEB 4 3 2 1 10 1 10 -1 5 10 0 5 10 1 mA 0 0 10 2 ΙC CCB 4 8 12 16 V 22 VCB(VEB) 5 2007-04-27 BCM856S Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 10 3 300 mW K/W 250 10 2 R thJS P tot 225 200 175 10 1 150 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 125 100 10 0 75 50 25 0 0 15 30 45 60 90 105 120 °C 75 10 -1 -6 10 150 TS 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) Ptotmax /PtotDC 10 3 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 6 2007-04-27 BCM856S Definition of matching ∆I C = (IC2-IC1)/IC1 $ # " 6 6 ! 1> 1? 1? 8 ? A 8 ? A 7 2007-04-27 Package SOT363 BCM856S Package Outline 2 ±0.2 0.9 ±0.1 +0.1 6x 0.2 -0.05 0.1 0.1 MAX. M 0.1 Pin 1 marking 1 2 3 A 1.25 ±0.1 4 0.1 MIN. 5 2.1 ±0.1 6 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 1.6 0.9 0.7 0.3 0.65 0.65 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCR108S Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 0.2 2.3 8 4 Pin 1 marking 1.1 2.15 8 2007-04-27 BCM856S Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9 2007-04-27