PHILIPS BYV36D Fast soft-recovery controlled avalanche rectifier Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYV36 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 May 30
1996 Jul 01
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV36 series
FEATURES
DESCRIPTION
• Glass passivated
Rugged glass SOD57 package,
using a high temperature alloyed
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
2/3 page k(Datasheet)
• Available in ammo-pack.
construction. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VRRM
PARAMETER
CONDITIONS
IF(AV)
−
200
V
BYV36B
−
400
V
−
600
V
BYV36D
−
800
V
BYV36E
−
1000
V
BYV36F
−
1200
V
BYV36G
−
1400
V
BYV36A
−
200
V
BYV36B
−
400
V
continuous reverse voltage
BYV36C
−
600
V
BYV36D
−
800
V
BYV36E
−
1000
V
BYV36F
−
1200
V
BYV36G
−
1400
V
−
1.6
A
average forward current
BYV36D and E
Ttp = 60 °C; lead length = 10 mm;
see Figs 2; 3 and 4
averaged over any 20 ms period;
see also Figs 14; 15 and 16
BYV36F and G
average forward current
BYV36A to C
BYV36D and E
Tamb = 60 °C; PCB mounting (see
Fig.25); see Figs 5; 6 and 7
averaged over any 20 ms period;
see also Figs 14; 15 and 16
BYV36F and G
1996 Jul 01
UNIT
BYV36C
BYV36A to C
IF(AV)
MAX.
repetitive peak reverse voltage
BYV36A
VR
MIN.
2
−
1.5
A
−
1.5
A
−
0.87
A
−
0.81
A
−
0.81
A
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
SYMBOL
IFRM
IFRM
BYV36 series
PARAMETER
repetitive peak forward current
CONDITIONS
MIN.
MAX.
UNIT
Ttp = 60 °C; see Figs 8; 9 and 10
BYV36A to C
−
18
A
BYV36D and E
−
17
A
BYV36F and G
−
15
A
BYV36A to C
−
9
A
BYV36D and E
−
8
A
BYV36F and G
−
8
A
repetitive peak forward current
Tamb = 60 °C; see Figs 11; 12 and 13
IFSM
non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max
prior to surge; VR = VRRMmax
−
30
A
ERSM
non-repetitive peak reverse
avalanche energy
−
10
mJ
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−65
+175
°C
MIN.
TYP.
MAX.
L = 120 mH; Tj = Tj max prior to surge;
inductive load switched off
see Figs 17 and 18
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
IF = 1 A; Tj = Tj max;
see Figs 19; 20 and 21
−
−
1.00
V
−
−
1.05
V
BYV36F and G
−
−
1.05
V
−
−
1.35
V
−
−
1.45
V
−
−
1.45
V
300
−
−
V
forward voltage
BYV36A to C
IF = 1 A;
see Figs 19; 20 and 21
BYV36D and E
BYV36F and G
V(BR)R
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYV36A
IR
1996 Jul 01
UNIT
BYV36D and E
BYV36A to C
VF
CONDITIONS
BYV36B
500
−
−
V
BYV36C
700
−
−
V
BYV36D
900
−
−
V
BYV36E
1100
−
−
V
BYV36F
1300
−
−
V
BYV36G
1500
−
−
V
VR = VRRMmax; see Fig.22
−
−
5
µA
VR = VRRMmax;
Tj = 165 °C; see Fig.22
−
−
150
µA
reverse current
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
SYMBOL
trr
BYV36 series
PARAMETER
MIN.
TYP.
MAX.
−
−
100
ns
−
−
150
ns
−
−
250
ns
−
45
−
pF
BYV36D and E
−
40
−
pF
BYV36F and G
−
35
−
pF
−
−
7
A/µs
−
−
6
A/µs
−
−
5
A/µs
reverse recovery time
BYV36A to C
BYV36D and E
CONDITIONS
when switched from
IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A;
see Fig. 26
BYV36F and G
Cd
diode capacitance
f = 1 MHz; VR = 0 V;
see Figs 23 and 24
BYV36A to C
dI R
-------dt
maximum slope of reverse recovery when switched from
IF = 1 A to VR ≥ 30 V and
current
dIF/dt = −1 A/µs;
BYV36A to C
see Fig.27
BYV36D and E
BYV36F and G
UNIT
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
Rth j-a
thermal resistance from junction to ambient
note 1
VALUE
UNIT
46
K/W
100
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.25.
For more information please refer to the “General Part of associated Handbook”.
1996 Jul 01
4
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV36 series
GRAPHICAL DATA
MSA867
1.6
MSA866
1.6
I F(AV)
I F(AV)
(A)
(A)
1.2
1.2
20 15
20 15
10 lead length (mm)
0.8
0.8
0.4
0.4
0
10
lead length (mm)
0
100
0
T tp ( oC)
200
T tp ( oC)
200
BYV36D and E
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
BYV36A to C
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
Fig.2
100
0
Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
Fig.3
MBD419
2.0
I F(AV)
(A)
1.6
Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
MSA865
1.2
handbook, halfpage
handbook, halfpage
I F(AV)
(A)
lead length 10 mm
0.8
1.2
0.8
0.4
0.4
0
0
0
100
o
Ttp ( C)
200
0
Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
1996 Jul 01
Tamb ( oC)
200
BYV36A to C
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.25.
Switched mode application.
BYV36F and G
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
Fig.4
100
Fig.5
5
Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV36 series
MSA864
1.2
MBD420
1.2
handbook, halfpage
handbook, halfpage
I F(AV)
I F(AV)
(A)
(A)
0.8
0.8
0.4
0.4
0
0
100
0
Tamb ( oC)
200
0
BYV36D and E
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.25.
Switched mode application.
Fig.6
100
T amb ( oC)
200
BYV36F and G
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.25.
Switched mode application.
Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
Fig.7
Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
MBD446
20
I FRM
(A)
δ = 0.05
16
12
0.1
8
0.2
4
0.5
1
0
10 2
10 1
1
10
10 2
10 3
t p (ms)
10 4
BYV36A to C
Ttp = 60°C; Rth j-tp = 46 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Jul 01
6
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV36 series
MBD447
20
I FRM
(A)
16
δ = 0.05
12
0.1
8
0.2
4
0.5
1
0
10 2
10 1
1
10
10 2
10 3
t p (ms)
10 4
BYV36D and E
Ttp = 60°C; Rth j-tp = 46 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MLB529
16
I FRM
(A)
δ = 0.05
12
0.1
8
0.2
4
0.5
1
0
10 2
10 1
1
10
10 2
10 3
t p (ms)
10 4
BYV36F and G
Ttp = 60°C; Rth j-tp = 46 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V.
Fig.10 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Jul 01
7
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV36 series
MBD441
10
I FRM
(A)
δ = 0.05
8
6
0.1
4
0.2
0.5
2
1
0
10 2
10 1
1
10
10 2
10 3
t p (ms)
10 4
BYV36A to C
Tamb = 60 °C; Rth j-a = 100 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V.
Fig.11 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MBD444
10
I FRM
(A)
8
δ = 0.05
6
0.1
4
0.2
2
0.5
1
0
10 2
10 1
1
10
10 2
10 3
t p (ms)
10 4
BYV36D and E
Tamb = 60 °C; Rth j-a = 100 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.12 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Jul 01
8
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV36 series
MLB530
8
δ = 0.05
I FRM
(A)
6
0.1
4
0.2
2
0.5
1
0
10 2
10 1
1
10 2
10
10 3
10 4
t p (ms)
BYV36F and G
Tamb = 60 °C; Rth j-a = 100 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V.
Fig.13 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MSA861
3
2.5 2 1.57
P
(W)
a=3
MSA862
3
2.5 2 1.57
P
(W)
1.42
2
2
1
1
0
a=3
1.42
0
0
1
I F(AV) (A)
2
0
BYV36A to C
I F(AV) (A)
2
BYV36D and E
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Fig.14 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
1996 Jul 01
1
Fig.15 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
9
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV36 series
MBD429
3
MSA857
200
handbook, halfpage
a=3
P
(W)
2.5 2 1.57 1.42
Tj
( oC)
2
100
1
A
B
C
D
E
0
0
0
1
I F(AV)(A)
0
2
400
800
V R (V)
1200
BYV36F and G
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
BYV36A to E
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
Fig.16 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
Fig.17 Maximum permissible junction temperature
as a function of reverse voltage.
MSA863
MLB599
200
10
handbook, halfpage
handbook, halfpage
IF
(A)
8
Tj
( oC)
6
100
4
F
G
2
0
0
0
1000
VR (V)
2000
0
BYV36F and G
BYV36A to C
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Fig.18 Maximum permissible junction temperature
as a function of reverse voltage.
1996 Jul 01
1
2
VF (V)
3
Fig.19 Forward current as a function of forward
voltage; maximum values.
10
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV36 series
MBD424
MLB531
10
10
handbook, halfpage
handbook, halfpage
IF
(A)
IF
(A)
8
8
6
6
4
4
2
2
0
0
0
1
2
3
VF (V)
0
4
1
2
VF (V)
3
BYV36F and G
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
BYV36D and E
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Fig.20 Forward current as a function of forward
voltage; maximum values.
Fig.21 Forward current as a function of forward
voltage; maximum values.
MGC550
103
handbook, halfpage
MSA868
10 2
handbook, halfpage
IR
(µA)
Cd
(pF)
102
BYV36A,B,C
10
BYV36D,E
10
1
1
0
100
Tj (°C)
1
200
102
V R (V)
103
BYV36A to E.
f = 1 MHz; Tj = 25 °C.
VR = VRRMmax.
Fig.22 Reverse current as a function of junction
temperature; maximum values.
1996 Jul 01
10
Fig.23 Diode capacitance as a function of reverse
voltage, typical values.
11
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV36 series
MBD436
10 2
handbook, halfpage
50
handbook, halfpage
25
Cd
(pF)
7
50
10
2
3
1
1
10 2
10
10 3
V R (V)
10 4
MGA200
BYV36F and G.
f = 1 MHz; Tj = 25 °C.
Dimensions in mm.
Fig.24 Diode capacitance as a function of reverse
voltage, typical values.
DUT
handbook, full pagewidth
Fig.25 Device mounted on a printed-circuit board.
IF
(A)
+
10 Ω
0.5
25 V
t rr
1Ω
50 Ω
0
t
0.25
0.5
IR
(A)
1
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.26 Test circuit and reverse recovery time waveform and definition.
1996 Jul 01
12
MAM057
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV36 series
IF halfpage
andbook,
dI F
dt
t rr
10% t
dI R
dt
100%
IR
MGC499
Fig.27 Reverse recovery definitions.
1996 Jul 01
13
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
PACKAGE OUTLINE
handbook, full pagewidth
k
3.81
max
28 min
Dimensions in mm.
The marking band indicates the cathode.
,
4.57
max
BYV36 series
a
28 min
0.81
max
MBC880
Fig.28 SOD57.
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jul 01
14