BAS16LT1G, BAS16LT3G, SBAS16LT1G, SBAS16LT3G Switching Diode Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • http://onsemi.com Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 CATHODE 1 ANODE MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 3 MARKING DIAGRAM 1 2 A6 M G G SOT−23 CASE 318 STYLE 8 1 THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature A6 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 mW/°C BAS16LT1G SOT−23 (Pb−Free) 3000/Tape & Reel RqJA 417 °C/W BAS16LT3G −55 to +150 °C SOT−23 (Pb−Free) 10000/Tape & Reel TJ, Tstg SBAS16LT1G SOT−23 (Pb−Free) 3000/Tape & Reel SBAS16LT3G SOT−23 (Pb−Free) 10000/Tape & Reel RqJA PD *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Device Package Shipping† †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2011 October, 2011 − Rev. 9 1 Publication Order Number: BAS16LT1/D BAS16LT1G, BAS16LT3G, SBAS16LT1G, SBAS16LT3G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max − − − 1.0 50 30 75 − − − − − 715 855 1000 1250 Unit OFF CHARACTERISTICS IR Reverse Voltage Leakage Current (VR = 75 Vdc) (VR = 75 Vdc, TJ = 150°C) (VR = 25 Vdc, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 mAdc) V(BR) mAdc Vdc Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 2.0 pF Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) VFR − 1.75 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, RL = 50 W) trr − 6.0 ns Stored Charge (IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 W) QS − 45 pC 820 W +10 V 2.0 k 100 mH tr 0.1 mF IF tp t IF trr 10% t 0.1 mF 90% D.U.T. 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE iR(REC) = 1.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 BAS16LT1G, BAS16LT3G, SBAS16LT1G, SBAS16LT3G 10 100 150°C IR , REVERSE CURRENT (μA) 125°C 10 85°C 55°C 1.0 25°C -55°C -40°C 0.1 125°C 1.0 85°C 0.1 55°C 0.01 25°C 0.01 0.1 0.001 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, FORWARD VOLTAGE (V) 0.9 1.0 0 1.1 50 20 30 40 VR, REVERSE VOLTAGE (V) 10 Figure 2. VF vs. IF Figure 3. IR vs. VR 0.62 Cap 0.60 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 150°C 0.58 0.56 0.54 0.52 0.50 0.48 0 1 2 4 3 5 VR, REVERSE VOLTAGE (V) Figure 4. Capacitance http://onsemi.com 3 6 7 8 60 70 BAS16LT1G, BAS16LT3G, SBAS16LT1G, SBAS16LT3G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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