ON BAS16LT1G Switching diode Datasheet

BAS16LT1G, BAS16LT3G,
SBAS16LT1G, SBAS16LT3G
Switching Diode
Features
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
•
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Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
3
CATHODE
1
ANODE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
75
Vdc
Peak Forward Current
IF
200
mAdc
IFM(surge)
500
mAdc
Peak Forward Surge Current
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
3
MARKING
DIAGRAM
1
2
A6 M G
G
SOT−23
CASE 318
STYLE 8
1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
A6
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
BAS16LT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
RqJA
417
°C/W
BAS16LT3G
−55 to +150
°C
SOT−23
(Pb−Free)
10000/Tape & Reel
TJ, Tstg
SBAS16LT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
SBAS16LT3G
SOT−23
(Pb−Free)
10000/Tape & Reel
RqJA
PD
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Device
Package
Shipping†
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 9
1
Publication Order Number:
BAS16LT1/D
BAS16LT1G, BAS16LT3G, SBAS16LT1G, SBAS16LT3G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
−
−
−
1.0
50
30
75
−
−
−
−
−
715
855
1000
1250
Unit
OFF CHARACTERISTICS
IR
Reverse Voltage Leakage Current
(VR = 75 Vdc)
(VR = 75 Vdc, TJ = 150°C)
(VR = 25 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 mAdc)
V(BR)
mAdc
Vdc
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
mV
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
−
2.0
pF
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns)
VFR
−
1.75
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 50 W)
trr
−
6.0
ns
Stored Charge
(IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 W)
QS
−
45
pC
820 W
+10 V
2.0 k
100 mH
tr
0.1 mF
IF
tp
t
IF
trr
10%
t
0.1 mF
90%
D.U.T.
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
iR(REC) = 1.0 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
BAS16LT1G, BAS16LT3G, SBAS16LT1G, SBAS16LT3G
10
100
150°C
IR , REVERSE CURRENT (μA)
125°C
10
85°C
55°C
1.0
25°C
-55°C
-40°C
0.1
125°C
1.0
85°C
0.1
55°C
0.01
25°C
0.01
0.1
0.001
0.2
0.3
0.4 0.5 0.6 0.7 0.8
VF, FORWARD VOLTAGE (V)
0.9
1.0
0
1.1
50
20
30
40
VR, REVERSE VOLTAGE (V)
10
Figure 2. VF vs. IF
Figure 3. IR vs. VR
0.62
Cap
0.60
CD, DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
150°C
0.58
0.56
0.54
0.52
0.50
0.48
0
1
2
4
3
5
VR, REVERSE VOLTAGE (V)
Figure 4. Capacitance
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3
6
7
8
60
70
BAS16LT1G, BAS16LT3G, SBAS16LT1G, SBAS16LT3G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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4
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BAS16LT1/D
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