Solid State Devices, Inc. SFF25P20 Series 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET 25 AMP / 200 Volts 150 mΩ typical P-Channel MOSFET Part Number/Ordering Information 1/ SFF25P20 ___ ___ │ └ Screening 2/ │ │ │ │ └ __ = Not Screened TX = TX Level TXV = TXV S = S Level Package 2/ S2I = SMD2 Isolated M = TO-254 Features: • • • • • • • • Maximum Ratings polySi gate cell structure Low ON-resistance UIS (unclamped inductive switching) rated Hermetically Sealed, Isolated Package Low package inductance Stress relief provided by flexible leads – several options available Improved (RDS(ON) QG) figure of merit TX, TXV, S-Level screening available Symbol Value Units VDSS -200 V Continuous transient VGS ±20 ±30 V Max. Continuous Drain Current @ TC = 25ºC ID1 25 A Max. Instantaneous Drain Current (Tj limited) @ TC = 25ºC ID3 95 A Max. Avalanche current IAR 25 A Repetitive Avalanche Energy EAR 30 mJ PD 250 W T OP & TSTG -55 to +150 ºC R0JC 0.83 0.6 typical ºC/W Drain - Source Voltage Gate – Source Voltage Total Power Dissipation @ TC = 25ºC Operating & Storage Temperature Maximum Thermal Resistance NOTES: Junction to Case SMD 2 Isolated TO-254 1/ For ordering information, price, operating curves, and availability- Contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless otherwise specified, all electrical characteristics @25ºC. NOTE: SEE DASH# DEFINITION TABLE FOR AVAILABLE LEAD FORMING CONFIGURATION NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0009B DOC SFF25P20 series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristics (@25oC, unless otherwise specified) Symbol Min Typ Max Units BVDSS 200 –– –– V VGS = 10V, ID = 12A, Tj= 25 C o VGS = 10V, ID = 25A, Tj= 25 C RDS(on) –– –– 125 150 150 –– mΩ Gate Threshold Voltage VDS = VGS, ID = 250μA VGS(th) 3.0 –– 5.0 V Gate to Source Leakage VGS = ±20V IGSS –– –– ±100 nA VDS = 160V, VGS = 0V, Tj = 25 C o VDS = 160V, VGS = 0V, Tj = 125 C IDSS –– –– –– –– 25 1 μA mA VDS = 10V, ID = 24A, Tj = 25oC gfs 5 12 –– Mho Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS = 10V VDS = 100V ID = 12A Qg Qgs Qgd –– –– –– 150 35 70 –– –– nC Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage VGS = 10V VDS = 100V ID = 12A RG = 4.7Ω IF = 25A, VGS = 0V td(on) tr td(off) tf –– –– –– –– –– 35 30 70 30 2.0 –– –– –– –– 3.0 Drain to Source Breakdown Voltage VGS = 0V, ID = 250μA o Drain to Source On State Resistance o Zero Gate Voltage Drain Current Forward Transconductance Diode Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 24A, di/dt = 100A/usec Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1 MHz VSD trr Ciss Coss Crss –– –– –– –– 250 4200 850 350 –– –– –– –– nsec V nsec pF NOTES: Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0009B DOC SFF25P20 series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com TO-254 (M) SMD2 Isolated .50 MIN .920 .50 MIN 2 1 .610 .290 3 .014 .006 .190 .160 A 3x .11±.02 .160 MAX 2x .050 .220 .570 .510 .610 TOLERANCES: (UNLESS OTHERWISE SPECIFIED) .XX ± .02 .XXX ± .010 LEAD FORMING CONFIGURATIONS SMD1I dash# -01 -02 -03 A 0.062” 0.000” 0.097” NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. .880 Package SMD1I PIN ASSIGNMENT (Standard) Drain Source Pin 1 Pin 2 DATA SHEET #: FT0009B Gate Pin 3 DOC